MARKING CODE 39A Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)

Contextual Info: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BA XX

D 71055

Abstract: Si5441DC MAX 71055 71055
Contextual Info: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 –20 20 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BA XX

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

HEXFET D2PAK

Abstract: D2Pak Package dimensions diode marking code 421
Contextual Info: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G • Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com

Contextual Info: DMN3010LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Green Product Summary V BR DSS RDS(ON) 30V 9.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V Features ID TC = +25°C 43A 39A density end products This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G • Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com

Contextual Info: DMN4010LK3 Green Product Summary Features RDS ON max ID max TC = +25°C • • Low Input Capacitance 11.5mΩ @ VGS = 10V 39A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 14.5mΩ @ VGS = 4.5V 35A • Halogen and Antimony Free. “Green” Device (Note 3)

Contextual Info: Advanced Power Electronics Corp. AP40T10GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Performance G BV DSS 105V RDS ON 35mΩ ID RoHS-compliant, halogen-free 39A S Description Advanced Power MOSFETs from APEC provide the designer with the best

AP40T10GP

Abstract: 40T10GP 39ag 40T10
Contextual Info: AP40T10GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 105V ▼ Single Drive Requirement RDS ON 35mΩ ▼ Fast Switching Characteristic ID D 39A G S Description Advanced Power MOSFETs from APEC provide the

40T10GH

Contextual Info: AP40T10GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 100V Single Drive Requirement RDS ON 35m Fast Switching Characteristic ID 100% Avalanche Test D 39A G S Description Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: AP40T10GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 105V Single Drive Requirement RDS ON 35m Fast Switching Characteristic ID 100% Avalanche Test D 39A G S Description Advanced Power MOSFETs from APEC provide the

IRL3302

Abstract: ld 18
Contextual Info: PD 9.1696 International IQR Rectifier IRL3302 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching V dss = 20 V RüS on = 0.020Í2 lD = 39A

Contextual Info: W83194R-39/-39A 100MHZ 3-DIMM CLOCK Table of Contents1. GENERAL DESCRIPTION . 3 2. PRODUCT FEATURES . 3

Contextual Info: PD - 9.1692A International Rectifier IÖR IRL3302S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 2 0 V Rü S o n = 0 .0 2 0 S2 lD = 39A

6239A

Contextual Info: PD 9.1692 International Rectifier IÖR IRL3302S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V Rü S o n = 0 .0 2 0 S2 lD = 39A

012 6V8A

Abstract: 56A schottky sma P4SMA250C P4SMA130CA
Contextual Info: WILLAS FM120-M+ THRU 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Series P4SMAFM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMA DO-214AC PACKAGE SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: Chip Resistor Series 712 Package Dimensions Dimensions mm/inch Case Size L W T A 0.85 ± 0.10 0.45 ± 0.05 0603 1.60 ± 0.10 0.063 ± 0.004 0.033 ± 0.004 0.018 ± 0.002 1.30 ± 0.10 0.50 ± 0.05 0805 2.10 ± 0.10 0.083 ± 0.004 0.051 ± .004 0.020 ± 0.002

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

6V8A, 610

Abstract: 39A 1.5SMC39A
Contextual Info: WILLAS FM120-M+ THRU 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Series SMC FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMC DO-214AB PACKAGE SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers