MARKING CODE 21E SOT323 Search Results

BFR182W

Abstract: BCR108W
Contextual Info: BFR182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz • Pb-free RoHS compliant package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Contextual Info: BFR182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz • Pb-free RoHS compliant package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

mar 806

Contextual Info: BFS17W NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

transistor marking R2s

Abstract: bfr93aw marking r2s Infineon Technologies transistor 4 ghz marking code R2s BCR108W
Contextual Info: BFR93AW NPN Silicon RF Transistor* • For low distortionbroadband amplifiers and oscillators up to 2 GHz at collector currents from 3 2 5 mA to 30 mA 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BFR183W

Abstract: transistor marking RHs BCR108W
Contextual Info: BFR183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

SOT23 NE

Abstract: BCW66 BFR181W BFR181W foot print
Contextual Info: BFR181W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

marking p1S

Abstract: BCR108W BFR92W BFT92W
Contextual Info: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 from 0.5 mA to 20 mA 1 • Complementary type: BFT92W PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

1 R 4254

Abstract: BCR108W BFR182W
Contextual Info: BFR182W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

E 94733

Abstract: marking p1S E 94733 3
Contextual Info: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Complementary type: BFT92W PNP * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BCR108W

Abstract: BFR182W
Contextual Info: BFR182W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

828 npn

Abstract: BCR108W BFR193W
Contextual Info: BFR193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 2 • fT = 8 GHz, F = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFR193W

Contextual Info: BFR193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 2 1 • fT = 8 GHz, F = 1 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFR93AW

Abstract: spice gummel Low Distortion Amplifiers AN077 transistor marking R2s BCR108W TS-104 marking R2s
Contextual Info: BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA • Pb-free RoHS compliant package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

transistor marking R2s

Abstract: BFR93AW marking R2s poon BCR108W
Contextual Info: BFR93AW NPN Silicon RF Transistor* • For low distortionbroadband amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution! Type

BFR183W

Contextual Info: BFR183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFR181W

Abstract: BCW66
Contextual Info: BFR181W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fj = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

DIN 6784

Abstract: MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W
Contextual Info: BC856W.BC860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN

Contextual Info: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

MARKING CODE 21E SOT323

Abstract: sot323 marking code A.C BC8488
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

MARKING CODE 21E SOT323

Abstract: sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon bc846bw
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29

bc 212 equivalent

Abstract: MARKING CODE 21E SOT323
Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17