| BC856W |  | Diotec | Surface mount Si-Epitaxial PlanarTransistors | Original | PDF | 123.23KB | 2 | 
| BC856W |  | Galaxy Semi-Conductor Holdings | PNP Silicon Epitaxial Planar Transistor | Original | PDF | 131.99KB | 3 | 
| BC856W |  | Infineon Technologies | PNP Silicon AF Transistors | Original | PDF | 235.3KB | 8 | 
| BC856W |  | Infineon Technologies | PNP Silicon AF Transistors | Original | PDF | 132.25KB | 8 | 
| BC856W |  | Kexin | PNP General Purpose Transistor | Original | PDF | 47.6KB | 2 | 
| BC856W |  | Korea Electronics | General Purpose Transistor | Original | PDF | 73.15KB | 3 | 
| BC856W |  | NXP Semiconductors | BC856W - PNP general purpose transistors - Complement: BC846W ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V | Original | PDF | 92.61KB | 10 | 
| BC856W |  | Philips Semiconductors | PNP General Purpose Transistor | Original | PDF | 75.11KB | 12 | 
| BC856W |  | Philips Semiconductors | PNP general purpose transistors | Original | PDF | 51.99KB | 12 | 
| BC856W |  | Philips Semiconductors | PNP General Purpose Transistor | Original | PDF | 83.42KB | 3 | 
| BC856W |  | Siemens | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) | Original | PDF | 279.54KB | 8 | 
| BC856W |  | Siemens | Cross Reference Guide 1998 | Original | PDF | 27.35KB | 7 | 
| BC856W |  | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | PDF | 465.63KB | 37 | 
| BC856W |  | TY Semiconductor | PNP General Purpose Transistor - SOT-323 | Original | PDF | 76.89KB | 2 | 
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| BC856W |  | Korea Electronics | EPITAXIAL PLANAR PNP TRANSISTOR | Scan | PDF | 249.25KB | 3 | 
| BC856W |  | Korea Electronics | General Purpose Transistor | Scan | PDF | 297.47KB | 3 | 
| BC856W |  | Philips Semiconductors | PNP General Purpose Transistors | Scan | PDF | 116.96KB | 6 | 
| BC856W,115 |  | NXP Semiconductors | PNP general purpose transistors - Complement: BC846W ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V; Package: SOT323 (SC-70); Container: Tape reel smd | Original | PDF | 92.7KB | 10 | 
| BC856W,135 |  | NXP Semiconductors | PNP general purpose transistors - Complement: BC846W ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V; Package: SOT323 (SC-70); Container: Tape reel smd | Original | PDF | 92.7KB | 10 | 
| BC856W-BC860W |  | Siemens | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) | Original | PDF | 279.53KB | 8 |