MARKING CODE 19S Search Results

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

Contextual Info: Package Details - SOD-882L Mechanical Drawing Lead Code: 1 Cathode 2) Anode Part Marking: One Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm) Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (19-September 2007)

transistor marking 19P

Abstract: transistor wae
Contextual Info: BFQ 19P NPN Silicon RF Transistor • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S Type Marking Ordering code tape and reel Package BFQ 19P FE Q 62702- F 1 060

npn transistor sot-89 MARKING AG

Contextual Info: NPN Silicon RF Transistor BFQ 19S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA. 6 CECC-type available: C E C C 50002/259. Type Marking Ordering code tape and reel

bond wire gold

Contextual Info: Package Details - SOT-223C Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (5-November 2007)

Contextual Info: R E U . /ED JUN 2 6 19S3 DOPUNT REVISIONS DESCRIPTION LETTER NO NOTES: A REVISED PER ECO 1. DISSIPATION FACTOR: .005 MAX @ 2 5 ' C, 1 kHZ. ER <£18 2. CAPACITANCE: 180 n F -2 2 0 nF. 3. DIELECTRIC WITHSTANDING VOLTAGE: 2.5 kV RATED, 3.5 kV PROCESS FOR 2 HOURS @ 100* C AND

MARKING 19S

Abstract: sot marking code ZS
Contextual Info: SIEMENS BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!

ez920

Abstract: LH5160N LH5160 LH5160HN-10L RC-1009B
Contextual Info: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:

MARKING 19S

Abstract: bfq 85 fgs npn Q62702-F1088 Marking Code FGs
Contextual Info: BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor 1p3

Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
Contextual Info: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S

Contextual Info: 32E D m a 2 3 t.3 2 o o o ib ^ m ? « s ip NPN Silicon RF Transistor 31 ^ 3 .3 B FQ 19P SIEMENS/ SPCLi SEMICONDS _ • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S

Contextual Info: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!

KJE transistor

Contextual Info: 32E D • flS3b3EG DOlb^S 4 « S I P NPN Silicon RF Transistor 3 1 -^ 3 SIEMENS/ SPCLi SEMICONDS T ' BFQ 19S _ • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA.

LH5160

Contextual Info: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:

MARKING 19S

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1359 BFG19S
Contextual Info: BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VJ HIFREQ

Contextual Info: Multilayer Ceramic Chip Capacitors www.vishay.com Vishay Part Numbering/Ordering Information PART NUMBERING/ORDERING INFORMATION VJ0805 CASE CODE 7 Y 102 CAPACITANCE DIELECTRIC NOMINAL CODE 0201 A = C0G (NP0) 0402 Y = X7R 0505 G = X5R 0603 H = X8R 06C4 (5)

transistor k87

Abstract: CMKT5078 CMKT5087 CMKT5088
Contextual Info: Central CMKT5078 CMKT5087 CMKT5088 TM Semiconductor Corp. ULTRAmini SURFACE MOUNT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5078 , CMKT5087, and CMKT5088, are Silicon transistors in an ULTRAmini™ surface mount package, designed for applications requiring high

Ceramic RF Power and HV Capacitors

Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

DIODE C06

Abstract: EECO THUMBWHEEL Switch Cinch Connectors E20SM diode marking 714 KELVIN-VARLEY DIVIDER 2214G 2299G 2229G 2216G
Contextual Info: 2000 SERIES THUMBWHEEL SWITCHES EECO’s 2000 Series is ideal for demanding industrial control applications. The large size of the switch makes it easy to operate, even if the operator is wearing gloves. The 2000 Series is available with an optional internal

MARKING R6 SOT-363

Contextual Info: CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar