MARKING CODE 190 SOT363 Search Results

A1s sot23

Abstract: BAW56S E6327 MARKING CODE A1s
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather

13006 TRANSISTOR

Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly

SGL0363Z

Abstract: trace code marking RFMD SGL-0363Z S218 device marking sgl IrL 1540 N DS091103 rfmd model marking code trace code marking RFMD SGL0363Z
Contextual Info: SGL-0363Z SGL-0363Z 5MHz to 2000MHz Low Noise Amplifier Silicon Germanium 5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGL-0363Z is a low power, low noise amplifier. It is designed for

PMBFJ620,115

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 3 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Observe precautions for handling

PMBFJ620

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken

74LVC2G06DW-7

Contextual Info: 74LVC2G06 DUAL INVERTER WITH OPEN DRAIN OUTPUTS Description Pin Assignments The 74LVC2G06 is a dual inverter gate with open drain outputs. The device is designed for operation with a power SOT26 SOT363 are Future Products supply range of 1.65V to 5.5V. The input is tolerant to 5.5V

BC846AS

Abstract: BC856AS 220JL BC846AS-7
Contextual Info: BC846AS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • A Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Complementary PNP Type Available BC856AS

Contextual Info: BC846AS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. NEW PROD UCT T Features • • • • • Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Complementary PNP Type Available BC856AS

Contextual Info: BC846AS DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR N EW PRODU CT Features • • • • • A Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Complementary PNP Type Available BC856AS Lead Free/RoHS Compliant (Note 1)

IC 7410

Abstract: IC 7410 datasheet marking code cj cp741 CP341 NPN PNP sot-563 sot 123f Schottky diodes tvs SMC MARKING marking code 45W CPD76V
Contextual Info: Tiny Leadless Module Guide Central Semiconductor Corp. TLM Tiny Leadless Modules TLM Schottky Rectifiers Selection Guide TYPE NO. VRRM IF VF @ IF V MAX (A) MAX (V) MAX (A) 40 1.0 0.55 1.0 CTLSH1-40 trr †TYP. (ns) MAX CD †TYP. (pF) MAX CHIP PROCESS

BAW56S

Abstract: A1s sot23 MARKING CODE SOT23 A1S BAW56 Marking a1s BAW56U BAW56W BCW66 BCW66H SC74
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration • BAW56S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAW56 BAW56W

Contextual Info: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV70

marking code a4s

Abstract: SOt323 marking code 6X sot363 marking DATE code BAV70S BAV70U A4S - BAV70 BAV70 INFINEON diode a4s BAV70 BAV70W
Contextual Info: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV70

SOT23 BAW56

Abstract: BAW56
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration • BAW56S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAW56 BAW56W

sot363a

Abstract: 3064 6pin BFM505 semiconductors bi 370 MAM210 NPN power transistor spice marking aded bi 370 transistor
Contextual Info: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Sm all size PIN SYMBOL • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

E6327

Abstract: marking code a4s DIN 6784 SOt323 marking code 6X BAV70F BAV70L3 BAV70 E6327 BAV70T BAV70U SC74
Contextual Info: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 2 3

SOt323 marking code 6X

Abstract: BCR198 BCR198W
Contextual Info: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package

INFINEON PART MARKING

Abstract: A4S 29
Contextual Info: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV70