MARKING CODE 11S Search Results

VBUS051BD-HD1

Abstract: LLP1006-2L VBUS051BD esdprotection
Contextual Info: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package

Contextual Info: CMR3U-01 CMR3U-02 CMR3U-04 CMR3U-06 CMR3U-10 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON ULTRA FAST RECOVERY RECTIFIERS 3.0 AMP, 100 THRU 1000 VOLT MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SMC CASE FEATURES: • High reliability

Contextual Info: CMR3-02 CMR3-04 CMR3-06 CMR3-08 CMR3-10 CMR3-11 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON GENERAL PURPOSE RECTIFIERS 3.0 AMP, 200 THRU 1100 VOLT MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SMC CASE FEATURES: • High reliability

marking YD

Abstract: BF999
Contextual Info: Silicon N-Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm tape BF 999 LB Q 62702-F38 Q62702-F1132 M axim um ratings Symbol

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST - - P LTR A6 B C C1 C2 1 3 DESCRIPTION Tolerance added Change marking Printing Printing Date-Code drawing logo change 4 5 DWN DATE HD HD HD HD PH UKo UKo UKo UKo ZC 09SEP2009 11SEP2009 10MAY2010 20AUG2010

pj 989

Contextual Info: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code

BF963

Abstract: SIEMENS marking siemens MOSFET bf 434 BB515 D270K BF 963
Contextual Info: SIEMENS Silicon N Channel MOSFET Tetrode BF 963 • For high-gain, low-distortion VHF TV and FM mixer and input stages Type Marking Ordering Code BF 963 - Q62702-F904 Pin Configuration 1 2 4 3 S D G2 Package1 Gì X-plast Maximum Ratings Parameter Symbol Values

ERB83-004

Abstract: diode ft 344
Contextual Info: E R 8 B 3 - 0 0 4 1 7 A I : Outl i ne Drawings SCHOTTKY BARRIER DIODE • 4 $ ^ : Features • 1&VF : Marking Low V F #7-3-1' : SH Super high speed switching. • - f ls - ir - Color code : ttflil-JC S& fSSRtt w High reliability by planer design, Abridged type name

CB903-4

Abstract: ML marking rft t-200
Contextual Info: CB903-4 1 OA ¡SbiS ^ I O utline D raw ings K LOW LOSS SUPER HIGH SPEED RECTIFIER -w03.0 ! L nr-MIN. 25 I 5.0 00.8 M 25m,n. • i $ f i : Features • ftV P Low V f ■ S / K ^ Marking S u p e r h ig h speed s w itc h in g . *7 - 3 - K : SH Color code : S ilver

MAV-11SM

Contextual Info: Mini-Circuits - Specification for Amplifier - MAV-11SM Amplifier print this page MAV-11SM Frequency GAIN, dB MHz fL - fU Maximum Power, dBm Output 1 dB Comp. Min. Input (no damage) Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc

T11D

Abstract: PT11S03
Contextual Info: Networking Communication Components P T Series IAN Transformer Part number: PT 11S03 Part name : 10/100 Transformer Single Port Feature 0 Compliant and peak reflow temperature rating 245° C . Meets IEEE802.3 specification. Excellent common mode noise suppression.

Contextual Info: Networking Communication Components PT Series _ IAN Transformer Part number: PT 11S02 Part name :10/100 Transformer Single Port B Feature # Compliant and peak reflow temperature rating 245°C . # Meets IEEE802.3 specification._ 0 Excellent common mode noise suppression.

1N 2907A

Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
Contextual Info: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series

L6 SOT-23

Abstract: marking code 20L SOT-23 BSS69R BSS69 BSS70R L6 sot 23 FMMT2369 BSS66 BSS70 BSS67
Contextual Info: I FERRANTI BSS69 BSS70 T 11sem iconductors L PNP S ilicon Planar M e d i u m P o w e r S w i t c h i n g Transistors DESCRIPTION These devices are intended for general purpose switching applications. Complementary to the BSS66 and BSS67 Encapsulated in the popular SOT-23 package, these

TK16H60C

Contextual Info: TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK16H60C Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 32Ω (typ.) High forward transfer admittance : |Yfs| = 11S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)

Contextual Info: 11-Serie KL-A_08-Serie KG-A 21/11/12 17:45 Page62 KL series Locking power rocker switches Distinctive features Protection frames Unlocking actuator Unlocking actuator Each KL rocker switch includes an unlocking actuator. This actuator must be pressed to activate the protected function of the rocker.

Contextual Info: TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK16H60C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 32Ω (typ.) z High forward transfer admittance : |Yfs| = 11S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)

Contextual Info: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I DESCRIPTION ICompany name changed IDATE ム ムl corr e ctlon category 1 temper at ur e range Apr， ， 40 'C~+8 5'C→ 40'C~ 十 105'C Additi 0n ;rated v0Ita ge ( O e l a t l n g0 1r a t e dv

Contextual Info: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.78Ω (typ.) High forward transfer admittance : |Yfs| = 11S (typ.) : IDSS = 100 µA (max) (VDS = 720V)

Contextual Info: 3SMC5.0CA THRU 3SMC170CA w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 3000 WATT, 5.0 THRU 170 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 3SMC5.0CA series devices are surface mount bi-directional glass

Contextual Info: CMSH5-20 CMSH5-40 CMSH5-60 CMSH5-100 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 5.0 AMP, 20 THRU 100 VOLT SMC CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH5-20 series 5.0 Amp surface mount silicon Schottky rectifiers are

Contextual Info: CMR3S-01 CMR3S-02 CMR3S-04 CMR3S-06 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SUPER FAST RECOVERY RECTIFIERS 3.0 AMP, 100 THRU 600 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CMR3S-01 series 3.0 Amp surface mount silicon Super Fast Recovery

Contextual Info: CMSH5-100HV CMSH5-150HV CMSH5-200HV w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 5.0 AMP, 100 THRU 200 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH5-100HV series 5.0 Amp surface mount silicon Schottky rectifiers are highly reliable components designed for use in all

CMSH3-40

Abstract: CMSH3-100
Contextual Info: CMSH3-20 CMSH3-40 CMSH3-60 CMSH3-100 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 3.0 AMP, 20 THRU 100 VOLT SMC CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH3-20 series 3.0 Amp surface mount silicon Schottky rectifiers are