MARKING C3F Search Results

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: INTEGRATED CIRCUITS 74F219A 64-bit TTL bipolar RAM, non-inverting 3-State Product specification IC15 Data Handbook Philips Semiconductors 1996 Jan 05 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, non-inverting (3-State) FEATURES 74F219A

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

MARKING C3F

Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.

Contextual Info: SN74LVC1G11 www.ti.com SCES487E – SEPTEMBER 2003 – REVISED DECEMBER 2011 SINGLE 3-INPUT POSITIVE-AND GATE Check for Samples: SN74LVC1G11 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation

MPC565MZP56D

Abstract: MPC565MZP56D device marking MPC565 MPC566 J1850 AR922 TEA 1019 jtag mpc565
Contextual Info: 32-BIT EMBEDDED CONTROLLER DIVISION CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC565.D General Business Use Report Generated: Mon Feb 17, 2003, 15:27:55 Page 1 = | MPC565.D | =

Contextual Info: SN74LVC1G11 www.ti.com SCES487F – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-AND Gate Check for Samples: SN74LVC1G11 FEATURES DESCRIPTION • The SN74LVC1G11 performs the Boolean function Y + A • B • C or Y + A B ) C in positive logic.

Contextual Info: SN74LVC1G11 www.ti.com SCES487F – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-AND Gate Check for Samples: SN74LVC1G11 FEATURES DESCRIPTION • The SN74LVC1G11 performs the Boolean function Y + A • B • C or Y + A B ) C in positive logic.

YU MARKING diode

Contextual Info: TO SH IB A 1SV293 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V293 VCO FOR UHF BAND RADIO Unit in mm ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance

marking 3f 6pin

Abstract: PC2771T marking C3f F MARKING 6PIN
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.

MPC563 MCU

Abstract: diode BBC MPC561 MPC563 QADC64
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR, 32-BIT EMBEDDED CONTROLLER DIVISION CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC563.C General Business Use Report Generated: Wed May 12, 2004, 09:22:58 Page 1 =

Transistor C3E

Abstract: C2H marking
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

HN3C16

Contextual Info: HN3C16FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC

Contextual Info: TOSHIBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in U S 6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

Contextual Info: HN3C10FU TOSHIBA TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL PLANAR TYPE N3 r 1 nFh VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC

Contextual Info: HN3C12FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3ri7Fll VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

MPC561

Abstract: MPC563 QADC64 AR11-0 AR-1117
Contextual Info: FREESCALE SEMICONDUCTOR, 32-BIT EMBEDDED CONTROLLER DIVISION CUSTOMER ERRATA AND INFORMATION SHEET Part: MPC563.C General Business Use Report Generated: Fri Nov 5, 2004, 10:21:50 Page 1 = | MPC563.C |

sod323 diode marking code 2E

Abstract: V2E MARKING DIODE sod323 diode marking code AC DIODE B74 DIODE marking code B74 BB134 diode code B74 UHF diode BB135 UHF variable capacitance diode
Contextual Info: Philips Semiconductors_ b b 5 3 ^ 3 1 Q0Sb3^b 73fl W A P X Preliminary specification BB134 UHF variable capacitance diode N AUER PHILIPS/DISCRETE bTE T> Q UICK REFERENCE DATA DESCRIPTION The BB134 is a silicon, double-implanted variable capacitance diode in planar

Contextual Info: T O SH IB A U3FWK42 TOSHIBA SCHOTTKY BARRIER RECTIFIER II 3 F W TRENCH SCHOTTKY BARRIER TYPE K A I Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Peak Forward Voltage Repetitive Peak Reverse Voltage Average Output Rectified Current VFM = 0.40 V MAX.

Contextual Info: T O SH IB A 1FWJ43L TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS • Low Forward Voltage VFM = 0.40 V Max. • Average Forward Current !f( A V ) = 1 .0 A • Repetitive Peak Reverse Voltage V r r m = 30V MAXIMUM RATINGS