MARKING C1G Search Results

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

MARKING c1y

Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART

SMD Code 12W SOT-23

Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

marking c1h

Abstract: marking c1g optoelectronic UPC2711TB UPC2712TB UPC2745TB UPC2746TB C1H MARKING
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 2.0±0.2 0.65 3 1.3 0.65 2 C1G 1.25±0.1 0.2 +0.1 -0 4 5 1 6 DOT ON BACK SIDE 0.9 ± 0.1 0.7 +0.1 0.15 -0.5 0 ~0.1 PART NUMBER

TBB-2012-245-C1G

Abstract: N5230A cyntec TBB cyntec TBF
Contextual Info: TBB-2012-245-C1G THIN FILM BALANCE FILTER 1. Feature: 1-1 1-2 1-3 2.45GHz Thin Film Balance Filter. For ISM Band applications like Bluetooth/WLAN. Lead Free, RoHS compliance 2. Part Number TBB 2012 — 245 —C1G — XX 1 (2) (3) (4) (5) Where (1) TBF : Thin Film Balance Filter

Contextual Info: Product introduction Medium voltage voltage transformer JDZX22-10 3/6 C1G-A(N) Type designation Type code Designation Net weight J Voltage transformer 22 kg D Single phase Z Cast epoxy resin X With residual voltage winding 22 Design sequence 10(3/6) Rated voltage

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

marking code C1H

Abstract: k1g marking C1G Transistor MARKING
Contextual Info: MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA55 / MMBTA56 Ideal for Low Power Amplification and Switching

transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

100MHZ NPN TRANSISTORS

Abstract: CMPTA06 CMPTA56
Contextual Info: Central CMPTA06 NPN CMPTA56 PNP TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA06, CMPTA56 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

C1G SOT-23

Abstract: CMPTA06 CMPTA56 CMPTA56PNP marking C2G
Contextual Info: CMPTA06 NPN CMPTA56 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA06, CMPTA56 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

CMPTA06

Abstract: CMPTA56 Marking codes
Contextual Info: CMPTA06 NPN CMPTA56 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA06 and CMPTA56 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy

CMPTA06

Contextual Info: CMPTA06 NPN CMPTA56 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA06 and CMPTA56 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy

marKing IGM sot-23

Abstract: CP304
Contextual Info: Central“ CMPTA06 NPN CMPTA56 PNP Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA06, CMPTA56 types are complementary silicon tran­ sistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

C1G Transistor MARKING

Abstract: transistor marking C1g
Contextual Info: Centrar CMPTA06 NPN CMPTA56 PNP Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA06, CMPTA56 types are complementary silicon tran­ sistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

FTR-C1SA003G

Abstract: FTR-C1CA003G C1CA003 marking gb0 C1GA003G FTR-C1SA005G FTR-C1GA005G C1CA003G CB005 FTR-C1
Contextual Info: FTR-C1 Series MINIATURE RELAY 2 POLES, 2A HIGH INSULATION/WIDE GAP FTR-C1 Series RoHS compliant n Features 2 Poles, 2 form C l Contact gap: more than 0.6mm l High surge voltage: 2,500V between open contacts 5,000V between coil & contact comply with Telcordia former Bellcore 2nd level surge

Contextual Info: FTR-C1 Series MINIATURE RELAY 2 POLES, 2A HIGH INSULATION/WIDE GAP FTR-C1 Series RoHS compliant n Features 2 Poles, 2 form C l Contact gap: more than 0.6mm l High surge voltage: 2,500V between open contacts 5,000V between coil & contact comply with Telcordia former Bellcore 2nd level surge

c1y transistor

Abstract: MARKING c1y C1G SOT-23 transistor c1y C1G Transistor MARKING npn C1Y ksc1623y KSC1623
Contextual Info: KSC1623 KSC1623 Low Frequency Amplifier & High Frequency OSC. 3 • Complement to KSA812 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: DBLS151G - DBLS159G CREAT BY ART Single Phase 1.5AMP. Glass Passivated Bridge Rectifiers DBLS Features — UL Recognized File # E-326854 — Glass passivated junction — Ideal for printed circuit board — Reliable low cost construction utilizing molded plastic technique

DBLS157

Contextual Info: DBLS151G - DBLS159G CREAT BY ART Single Phase 1.5AMP. Glass Passivated Bridge Rectifiers DBLS Features — UL Recognized File # E-326854 — Glass passivated junction — Ideal for printed circuit board — Reliable low cost construction utilizing molded plastic technique