MARKING BCS Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: SCRH8D43 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS Inductance Test uH Frequency DC Resistance ( MAX) (2) (1) Saturation Temperature

Contextual Info: SCRH62 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS Inductance Test uH Frequency DC Resistance ( MAX) (2) (1) Saturation(3) Temperature (4)

Contextual Info: SCRH8D43 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS Inductance Test uH Frequency DC Resistance (Ω MAX) (2) (1) Saturation Temperature

Contextual Info: SCRH62 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation(3) Temperature (4) Current Current (A) (A)

Contextual Info: SCRH64B SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCRH64B-100 SCRH64B-120 SCRH64B-150 SCRH64B-180 SCRH64B-220 SCRH64B-270

Contextual Info: SCRH73B SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH73B-100 SCRH73B-120 SCRH73B-150 SCRH73B-180 SCRH73B-220 SCRH73B-270 SCRH73B-330

Contextual Info: SCRH64B SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCRH64B-100 SCRH64B-120 SCRH64B-150 SCRH64B-180 SCRH64B-220 SCRH64B-270

Contextual Info: SCRH73B SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2. Excellent Power Density 3. Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH73B-100 SCRH73B-120 SCRH73B-150 SCRH73B-180 SCRH73B-220 SCRH73B-270 SCRH73B-330

agilent model marking code

Abstract: SOT 363 marking code 06 low noise
Contextual Info: Agilent HSMS-281x Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • Low Flicker Noise • Low FIT Failure in Time Rate* Pin Connections and Package Marking Description/Applications 1 2 3 6 GUx These Schottky diodes are

MGA-85563-BLK

Abstract: MGA-85563 rfics marking 76 A004R MGA-85563-TR1 NF50 marking CODE GA sot363
Contextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • Lead-free Option Available Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB

BCW61

Abstract: BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF
Contextual Info: BCW61, BCX71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration

BCX 71G E6327

Abstract: BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23
Contextual Info: BCW61, BCX71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration

BCX71

Abstract: marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN
Contextual Info: BCW61, BCX71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration

BCW61A

Contextual Info: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking

C1554

Abstract: BKs sot-23 SIEMENS BJS marking BJs
Contextual Info: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking

bcx71

Contextual Info: BCW61, BCX71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration

BCW61FF

Abstract: BCs sot23
Contextual Info: BCW 61, BCX 71 PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking

71 SOT-23

Contextual Info: BCW 61, BCX 71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking Pin Configuration

Contextual Info: BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 - 6C BC818 = 6H BC818-16 = 6E BC818-25 - 6F BC818-40 - 6G PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm 3.0 2.8 0.4S C J °-38 r i —I

BC817

Abstract: bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Contextual Info: 23Ö33TM □□□□73 4 T07 • BC817 BC818 DÎL SILICON PLANAR EPITAXIAL TRANSISTORS N-P—N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m

Contextual Info: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon EN

Abstract: cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555
Contextual Info: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon

Abstract: cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA
Contextual Info: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the