KDV316E
Abstract: Marking BA
Contextual Info: SEMICONDUCTOR KDV316E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking BA No. 2005. 2. 15 Item Marking Description Device Mark BA KDV316E Revision No : 0 1/1
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kdv316emarking ba |
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DSA00103920.txt
Contextual Info: SEMICONDUCTOR BAS23W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 JE 1 2 Item Marking Description Device Mark JE BAS23W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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bas23wdsa00103920.txt |
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BAW56W
Abstract: marking h3
Contextual Info: SEMICONDUCTOR BAW56W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H3 1 2 Item Marking Description Device Mark H3 BAW56W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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baw56wmarking h3 |
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marking JC
Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
Contextual Info: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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bav23sot-23marking jcbav23s marking+6sot23 marking jbsot23 jbsot23 marking jcjb sot23e2- markingmarking jb sot23
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marking code vishay label
Abstract: origin capacitor jedec code VISHAY MARKING CODE COUNTRY OF ORIGIN capacitor package Vishay capacitor code marking IEC 60068-1 marking code diode 04 transistor country code
Contextual Info: Package Marking Vishay BCcomponents Package Marking PACKAGE MARKING The Capacitor Package Marking is detailed as below: BARCODE LABEL MARKING LINE MARKING EXPLANATION 1 Manufacturer's name 2 3 Country of origin Sub-family 4 5 6 Type description Capacitance value in µF, tolerance, voltage and climatic
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19-oct-04marking code vishay labelorigincapacitor jedec code+7vishay marking codecountry of origincapacitor packagevishay capacitor code markingiec 60068-1marking code diode 04transistor country code
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BAV99W
Abstract: H5 MARKING
Contextual Info: SEMICONDUCTOR BAV99W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H5 1 2 Item Marking Description Device Mark H5 BAV99W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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bav99wh5 marking |
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BAV70W
Abstract: 1h41
Contextual Info: SEMICONDUCTOR BAV70W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H4 1 2 Item Marking Description Device Mark H4 BAV70W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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bav70w1h41 |
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H8 SOT-23 bav99
Abstract: BAV99 H8 marking H8 H8 SOT-23 SOT23 H8 H8 marking marking H8 SOT-23 bav99 marking BAV99 JB SOT23
Contextual Info: SEMICONDUCTOR BAV99 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking H8 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark H8 BAV99 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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bav99ot-23h8 sot-23 bav99bav99 h8+7marking h8h8 sot-23sot23 h8h8 markingmarking h8 sot-23bav99 markingjb sot23
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BAV21W
Contextual Info: SEMICONDUCTOR BAV21W MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking HU 0 1 2 1 No. Item Marking Description Device Mark HU BAV21W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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bav21w |
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marking H6 sot 23
Abstract: marking H6 BAW56 marking EA SOT23 SOT23-5 marking H6
Contextual Info: SEMICONDUCTOR BAW56 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking H6 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark H6 BAW56 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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baw56ot-23marking h6 sot 23marking h6+2marking ea sot23sot23-5 marking h6
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marking BA
Abstract: transistor mark BA ba 2nd year PG05BAUSM
Contextual Info: SEMICONDUCTOR PG05BAUSM MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking BA 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA PG05BAUSM hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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pg05bausmmarking batransistor mark baba 2nd year |
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ZP33A
Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Contextual Info: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=
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OCR Scan
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00-4kqdo-34rb441qrb721q+16do-340usdrb100at0220fprb015t-40r8026t-401n4146zp33atzp33azp 33a1n9638zp 2781n52438tzp10amtzj 188mtzj 2481n6233
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transistor mark BA
Abstract: KTC9011S ktc90
Contextual Info: SEMICONDUCTOR KTC9011S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BAF 2 1 Item Marking Description Device Mark BA KTC9011S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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ktc9011sot-23transistor mark baktc90 |
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B35R
Abstract: Z6W27V DO-218 do218 Z6W27
Contextual Info: SEMICONDUCTOR Z6W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B35R 0D24 No. Item 1 Description Bar N(-) Type B35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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z6w27vdo-218b35rdo218+1z6w27
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E30A23VS
Abstract: A30S
Contextual Info: SEMICONDUCTOR E30A23VS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30S E30A23VS A : Voltage classification 0D24
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e30a23vsa30s |
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1A30R
Abstract: MARKING CMR A30R E30A23VR
Contextual Info: SEMICONDUCTOR E30A23VR MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30R E30A23VR A : Voltage classification 0D24
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e30a23vr1a30rmarking cmra30r |
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e35r
Abstract: Z5W37V do-218 do218
Contextual Info: SEMICONDUCTOR Z5W37V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 E35R 0D24 No. Item 1 Description Bar N(-) Type E35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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z5w37vdo-218e35rdo218 |
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Z4W27V
Abstract: DO-218 B25R do218 month marking
Contextual Info: SEMICONDUCTOR Z4W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B25R 0D24 No. Item 1 Description Bar N(-) Type B25R B : Voltage Classification Lot No. 2008. 7. 2 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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z4w27vdo-218b25rdo218+1month marking
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do-218
Abstract: H35R Z5W48V do218 diode 218 transistor day
Contextual Info: SEMICONDUCTOR Z5W48V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 H35R 0D24 No. Item 1 Description Bar N(-) Type H35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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z5w48vdo-218h35rdo218+2diode 218transistor day
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ba 2nd years
Abstract: KRX101U b.a 1st year ba 2nd year ba 1st year
Contextual Info: SEMICONDUCTOR KRX101U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
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krx101uba 2nd yearsb.a 1st yearba 2nd year+1ba 1st year
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E35A2CR
Abstract: e35a Diode MarkING N
Contextual Info: SEMICONDUCTOR E35A2CR MARKING SPECIFICATION MR PACKAGE 1. Marking method Laser Marking 2. Marking 1 35R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 35R 0D24 E35A2CR Year 0~9 : 2000~2009 D Month
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e35a2cre35adiode marking n |
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ba 2nd years
Abstract: transistor mark BA KRX101E marking BA
Contextual Info: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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krx101eba 2nd yearstransistor mark bamarking ba |
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transistor day
Abstract: diode 30s Diode MarkING N MARKING CMR E30A2CS
Contextual Info: SEMICONDUCTOR E30A2CS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 30S 0D24 E30A2CS Year 0~9 : 2000~2009 D Month
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e30a2cstransistor daydiode 30sdiode marking n+1marking cmr
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diode u1G
Abstract: diode 29 SMA Package
Contextual Info: SEMICONDUCTOR SMAU1G MARKING SPECIFICATION SMA 1 PACKAGE 1. Marking method Laser Marking 2. Marking U1G 1 2 3 No. Item Marking Polarity Device Name Lot No. 2007. 7. 26 Revision No : 0 Description Bar Cathode U1G SMAU1G 7 Year 0~9 : 2000~2009 29 Week 29 : 29th Week
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diode u1gdiode 29sma package |
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