BAS23W Search Results

DSA00103920.txt

Contextual Info: SEMICONDUCTOR BAS23W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 JE 1 2 Item Marking Description Device Mark JE BAS23W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

BAS23

Contextual Info: SEMICONDUCTOR BAS23W TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES E ・High Reliability. B M M ・Small surface mounting type USM . D J 3 1 G A 2 MAXIMUM RATING (Ta=25℃) RATING UNIT VRM 300 V Reverse Voltage VR 250 V Continuous Forward Current

Contextual Info: SEMICONDUCTOR BAS23W TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES 2009. 1. 23 Revision No : 2 1/2

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION