MARKING AOR Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

marking VU smb

Contextual Info: SMP100-xxx SMP100-xxxH225 SGS-THOMSON MglMlLiCTliMDOS T R IS IL FEATURES • BIDIRECTIONAL CROWBAR PROTECTION ■ VOLTAGE RANGE : FROM 8V to 320V ■ REPETITIVE PEAK PULSE CURRENT: Ip p = 100 A 10/1000p.s ■ HOLDING CURRENT: Ih = 150m Aor 225mA . LOW LEAKAGE CURRENT!-: Ir = 2 pA max

ss295

Abstract: 1SS295 SS29
Contextual Info: TOSHIBA 1SS295 TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) E +0.5 2.5-0.3

1SS271

Contextual Info: TOSHIBA 1SS271 TOSHIBA DIODE V H F- U H F M IXER APPLICATION • • • 1 SS271 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) M A X IM U M RATINGS (Ta = 25°C)

1SS295

Contextual Info: 1SS295 TO SH IBA TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance : AVjp = 10mV Max. : AOr = 0.1pF (Max.) MAXIMUM RATINGS (Ta = 25°C)

1SS271

Contextual Info: 1SS271 TO SH IBA TOSHIBA DIODE V H F -U H F MIXER APPLICATION • • • SILICON EPITAXIAL SCHO TTKY BARRIER TYPE 1 SS271 Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjp = 10mV Max. : AOr = 0.1pF (Max.) MAXIMUM RATINGS (Ta = 25°C)

pj 0159

Abstract: smp1 OVERLOAD RELAY PN2461 CNET131-24 SMP100-200 SMP100-8 SMP100-XXX VDE0433 VDE0878 TRISIL SMP
Contextual Info: SMP100-xxx SMP100-xxxH225 T R IS IL FEATURES • BIDIRECTIONAL CROWBAR PROTECTION ■ VOLTAGE RANGE : FROM 8V to 320V ■ REPETITIVE PEAK PULSE CURRENT: Ip p = 100 A 10/1000 (AS ■ HOLDING CURRENT: lH = 150m Aor 225mA ■ LOW LEAKAGE CURRENT: lR = 2 |iA m a x

Contextual Info: T HI R D川 L EP R O J E C T I O N， ALTERATION I S S U E I … -nhu 一H 一H 一M - H - H - H 一H - H 一一一-一一一- -ra- H 一H - H -一 nu-・ ， d - 一 一H - H - - - H 一H - H tt一 一一一- 一-一一 DATE Apr . 1 2008 A pr . 1 2012 Apr

M6562

Contextual Info: T H I R DA N G L EP R O J E C T I O NI ALTERATION 1 S S U E I DESCRIPTION I IRATED 1VOLTAGE ECQE6102 0 F 1630VDC M61220F 1 1 f161520F¥ 1 H61820FI l I 2162220Fi 1 1 1162720F¥ 1 H6332 F¥ 1 H63920FI 1 H64720FI 1 M6562()FI I H6682()FI 1 1 H68220FI I ITEM CODE

Contextual Info: THIRD ANGLE PROJECTION I ALTERATION I SS U E ITEM CODE ECQE4103 FB 1 1 4123()FB 4153()FB 1 1 1 / 4183()FB 1 / 4223()FB 1 / 4273()FB 1 1 43330FB 1 / 43930FB 1 / 4473()FB 1 / 45630FB f f 46830FB 1 / 4823()FB ff4104()FB 1 1 4124()FB / f 41540FB ff41840FB

Contextual Info: T HI R D川 L EP R O J E C T I O N I ALTERATION I S S U E ITEM CODE ECQE10 1030 FB 1 1 101230FB 1 101530FB 1 101830FB 102230 FB 1 1 102730FB 1 103330FB 1 103930FB 1 104730FB 1 105630FB 1 1 106830FB 1 1 108230 FB 1 I 101040FB 11101240FB 1 I 101540FB 1/101840FB

Contextual Info: iHIRD ANGLE PROJECTION I ALTERATION I S S U E RATED CAP ITEM CODE F VOLTAGE * ECQE2103 ( )F 250VDC O . 01 ( 103) 1 1 1 21 23 ( )F 0.012 (123) 1 1 1 i 2153{)F O . 015 (153) 1 1 1 1 21 83 ( )F 0.018(183) 1 1 1 1 2223()F 0.022 (223) 1 1 1 1 2273()F 0.027 (273)

Contextual Info: iHI R D ANGLE PROJECTI O N I ALTERATION I SS U E RATED CAP ITEM CODE F VOLTAGE * O . 01 ( 103) ECQE21030FZ 250VDC 1 1 1 1 21230FZ O . 012 (123) 1 1 f I 21530FZ O . 015 (153) f I f I 21830FZ O . 018 (183) 1 1 22230FZ 0.022 (223) " 1 1 1 1 22730 FZ 0.027 (273)

T 3036

Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
Contextual Info: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,

Contextual Info: Super Fast Recovery Diode Single Diode •¿m H OUTLINE D4L20U 200V 4A F eatu re • Low Noise • tnr=35ns • Full Molded • s v -rx • trr=35ns M ain Use • • • • • 7 5 '1 'T n - J L / * ^ .O A J .S • ii f f i. F A Switching Regulator Fly Wheel

CMT908-VJ

Abstract: MagneTek 00B2
Contextual Info: DW G N O .ÇMr^ûg-VJ I 1 DC R E S IS T A N C E IN O H M S SCHEMATIC 2 © 1 3 V O L /m m 4 m TO TO 2 dZQ 4 JZ0 is i APPLY = . 1 V @ INDUCTANCE = / t » 2 \N U hssrfii MAX t> e I MAX MAX w m w 10 K H z r,00 m H Y S \ - h ^ 3 - 4 . UHTVHtW r I MI N il b m B V

schottky marking 31 sma

Contextual Info: T ^ 7# S G S -T H O M S O N ra [M 5iHi©ir[H]©[M0©s S T P S 1 3 0 A /U SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS I f a v 1A V rrm 30 V V f (max) 0.46 V FEATURES AND BENEFITS • LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND LOW LEAKAGE

MARKING AHW

Abstract: PEAK tray drawing ScansU9X28
Contextual Info: SHARP LHP V 5 6 2 S 1 Contents 1. General .*. 2 2. Features . . 2 3. Pin Configuration and Pin Description -. 3 .

a80 L hall effect sensor

Abstract: BK 1085 POWER SUPPLY BOARD 20 94V0 10PDT a89 hall sensor NC Tactile pushbutton 515D00000 a35 dia hp ne 3mm bicolor led UL94V-2
Contextual Info: Pushbutton Product Selection Guide Pushbutton A Pushbutton Series E020 8020 ELUM EP TP Mom./ Latching Tiny Tiny Poles/Throws SPDT SPST, SPDT, DPST SPST, SPDT, DPST SPDT, DPDT SPDT, DPDT, 3PDT, 4PDT Max. Current 3.5 VA 1 Amp 1 Amp 1 Amp 1 Amp Switch Type Process Sealed

285D

Contextual Info: >wo n o . ç a ; / h ü v -h s I 1 TO 2 ,/2 c ? RESISTANCE S r ç J L ,120 SCHEMATIC 1 lo c k 2 © WAX IN OHMS • Y D L M U T V Y TÌU 6T 3 E 4 il imp V M .0 3 2 " @ c jo K K E n r KHz 10 efoo £ APPLY = . I V INDUCTANCE MOUNTING SURFACE P I K DIA. UAÏ

Transistors high frequency Bipolar NPN

Abstract: transistor marking code SGs IUC 9300 marking b4c SGS Ates data ed general semiconductor HP2-17 FERRANTI
Contextual Info: ADVANCE COPY I 18 NOV DEPARTMENTAL COMPONENT SPECIFICATION FERRANTI »85 PSD DISCRETE SEMICONDUCTOR DEVICES 28' 63 TRANSISTOR BIPOLAR NPN LOU POWER. GENERAL PURPOSE fT - 30 NHz Pt o t * 1 ' ° W* Scotland vr»n - 120 »_ M O D. R EC O RD SHEET 1 ? 3 4 s

CIRCUIT 01 94HB

Contextual Info: Pushbutton Product Selection Guide Pushbutton A Pushbutton Series ELUM EP TP Mom./ Latching Tiny Tiny Poles/Throws SPDT SPST, SPDT, DPST SPST, SPDT, DPST SPDT, DPDT SPDT, DPDT, 3PDT, 4PDT Max. Current 3.5 VA 1 Amp 1 Amp 1 Amp 1 Amp Switch Type Process Sealed

Contextual Info: ZENER DIODES SMC Diode Solutions was founded in 1997 to support high reliability customers. Headquartered in Plainview, New York with a fabrication facility in Nanjing, China, SMC designs and manufactures their own products at the highest quality standards.

CK 77 94V-0 6 pin wire

Abstract: NYLON A11 NE1839EE CK 77 94V-0 6 pin 798202263 ZF2UEEB elumeesaq7c marking code 2AW AW 8731 8421SD9AV2GE
Contextual Info: Pushbuttons Product Selection Guide Pushbutton A Pushbutton Series ELUM EP TP Mom./ Latching Tiny Tiny Poles/Throws SPDT SPST, SPDT, DPST SPST, SPDT, DPST SPDT, DPDT SPDT, DPDT, 3PDT, 4PDT Max. Current 3.5 VA 1 Amp 1 Amp 1 Amp 1 Amp Switch Type Process Sealed