MARKING AO4 Search Results

4D0101

Abstract: microstripline FR4 5964-9806E
Contextual Info: mam H E W L E T T IS S A PACKARD 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • Ultra-M iniature Package • Internally Biased, Single +5 V Supply (14 mA)

bd9883

Abstract: GH053A DTS-204 SE9189L SR50 Diode HC SR01 E105147 BA100 diode GT-209 equivalent SP8M3
Contextual Info: Specification GH053A A2 -060415 Version April 2006 Data Modul AG - www.data-modul.com NO DATE REVISION 1 2005.06.15 PAGE 6 Change the part: R10,11,14,15 : 150Ω →47Ω AP4532GM(APEC)→AP4509GM(APEC) Add the vendor AO4606(AOS) Remove the vendor SP8M3(ROHM)

AO4609

Abstract: mm4609 aos Lot Code Week ALPHA MARKING CODE
Contextual Info: July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side

ao4800

Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
Contextual Info: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

PD0026

Abstract: transistor C 4429 equivalent AO4429 AO4429L PD-002 aos Lot Code Week
Contextual Info: AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4429 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard

AO4916

Abstract: 4916 mosfet AO4916L 4916 alpha rjl 10a
Contextual Info: Rev 3: Nov 2004 AO4916, AO4916L Green Product Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch

AO4420

Abstract: AO4420L
Contextual Info: Rev 4: Nov 2004 AO4420, AO4420L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.This device is suitable for

4407

Abstract: TRANSISTOR 4407 4407 soic ALPHA SEMICONDUCTOR 4407 AO4407 AO4407L 4407 so8 AOS AO4407 4407 4407 so-8 4407 so 8
Contextual Info: Rev 0:June 2002 Rev 1: Feb 2004 AO4407, AO4407L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable

4410 SO-8

Abstract: 4410 diode MARKING CODE 18A AO4410L transistor on 4410 AO4410 rg 625 marking 62m 4410 SO8 ALPHA YEAR CODE
Contextual Info: Rev 0:Jan 2003 Rev 1:Jan 2004 Rev 2:Mar 2004 AO4410, AO4410L Lead-Free N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate

mosfet 4914

Abstract: 4914 mosfet 4914 dual n-channel 4914 DUAL MOSFET 4914 alpha omega 4914 ON 4914 AO4914 AO4914L 4914 alpha
Contextual Info: Rev 0: July 2003 Rev 1: Jan 2004 Rev 2: Mar 2004 AO4914, AO4914L Lead-Free Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make

ao4600

Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
Contextual Info: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)

Contextual Info: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS V = 30V -30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)

he807

Contextual Info: ATI électronique P.C,COÀINECI1oRStIE &1-Ao4-Ao7 SUMMARY ; ÀLLIÀNCE TECIINIOUE INDI'STRIELI.E BE&',t . d,4 ' 407 HEaoi . ao4. 407 CHOICE OF lHE SEhIE l; HEa - .lt4.607 DENOMINATIONÀND MÀRKING qÊ_Ê-oJ+ à%%% oEF èoÊC.!r\ HEoot. ao4.a07 GUIDES to@ûûê"&dbq*te,ro.dq€

AO4805

Contextual Info: June 2002 AO4805 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4805 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

4413 soic 8

Abstract: alpha omega 4413 ao4413 ALPHA SEMICONDUCTOR 4413 4413 so-8 4413 transistor 4413
Contextual Info: June 2002 AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

AO4415

Contextual Info: August 2002 AO4415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4415 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.

AO4400

Abstract: AO4401 AO4800
Contextual Info: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in

4404 SO-8

Abstract: MM4404 AO4404
Contextual Info: July 2001 AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in

AO4411

Abstract: 4411 so-8 4411 ALPHA 4411 soic 8
Contextual Info: August 2002 AO4411 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4411 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.

4410 SO-8

Abstract: diode MARKING CODE 18A AO4410 aos Lot Code Week
Contextual Info: Jan 2003 AO4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a

AO4401

Abstract: ao4800
Contextual Info: July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

AO4402

Abstract: AO4800 mpf201 AO4400 AO4401
Contextual Info: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

AO4403

Abstract: 4801 soic8 AO4400
Contextual Info: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

transistor on 4408

Abstract: diode 4408 AO4408 ON 4408
Contextual Info: Nov 2002 AO4408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4408 uses advanced trench technology to provide excellent RDS ON , low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.