MARKING AL PNP Search Results

SOT89 marking cec

Abstract: PNP TRANSISTOR SOT89 MARKING 93 SOT89 sot89 marking 93 marking chc SOT89 BC868 BC869 BC869-16 BC869-25
Contextual Info: Philips Sem iconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 em itter 2 collector 3 base • Low voltage, high current LF applications.

transistor marking code AL

Abstract: TRANSISTOR marking code 432 AL 102 pnp transistor A 673 transistor DPAK marking code 300
Contextual Info: Central" CJD340 NPN CJD350 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD340, CJD350 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high voltage general pur­

marking 0a

Abstract: mun5111dw1t1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M UN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network M otorola Preferred D evices The BRT Bias Resistor Transistor contains a single transistor with a monolithic

2N1025

Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
Contextual Info: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE sat < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 

Contextual Info: BCX 51 / 52 / 53 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Mechanical Data Features • • • • • • • • IC = -1A Continuous Collector Current Low Saturation Voltage VCE sat < -500mV @ -0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction

BCX5316TA

Abstract: BCX53-16 BCX54 marking AL sot89 bcx51-16t bcx5316t
Contextual Info: BCX 51 / 52 / 53 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features • • • • • • • • Mechanical Data IC = -1A Continuous Collector Current Low Saturation Voltage VCE sat < -500mV @ -0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction

BCX5216QTA

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE SAT < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 

marking 51 sot223

Abstract: bsp52
Contextual Info: BSP 50. BSP 52 NPN Silicon Darlington Transistors • High collector current • Low collect or -emitter saturation voltage • Complementary types: BSP 60.BSP 62 PNP Type Marking Ordering code (12-mm tape ) Package* BSP 50 BSP 50 Q62702- P1163 SOT-223

AM/mcl d01 94V0

Contextual Info: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current

marking code ED

Abstract: high voltage pnp transistor bcv48
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors BCV28; BCV48 FEATURES PINNING • Very high DC current gain min. 10000 PIN DESCRIPTION • High current (max. 500 mA) 1 em itter • Low voltage (max. 60 V). 2 collector 3 base APPLICATIONS

transistor bc 318

Abstract: TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517 TRANSISTOR BC C944 Q62702-C944 transistor bc 517
Contextual Info: PNP Silicon Darlington Transistor BC 516 High current gain ● High collector current ● Complementary type: BC 517 NPN ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 – Q62702-C944 C TO-92 B E Maximum Ratings Parameter Symbol

T 3036

Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
Contextual Info: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,

MPSA56

Abstract: MPSA56 diagram MPSA55 60V PNP TO-92 DS11204
Contextual Info: MPSA55 / MPSA56 PNP SMALL SIGNAL TRANSISTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Recommended for Driver and Low-Power Output Stages General Purpose Amplifier KM hM TO-92 Dim Min

pnp 200v

Abstract: mpsa92 MPSA42
Contextual Info: MPSA92 PNP HIGH VOLTAGE SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction -300V Collector-Emitter Voltage Complimentary NPN Type Available MPSA42 KM TO-92 Mechanical Data_ • • • • • Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

BCX53

Abstract: marking AE BCX52 BCX51 smd marking AA SMD iC MARKING AG SMD iC MARKING AE BCX53 SMD SMD AK BCX52-16
Contextual Info: Transistors SMD Type PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current max. 1 A . Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO -45 V BCX52 -60

transistor marking code AL

Abstract: transistor marking code ak BCX51 PNP TRANSISTOR "SOT89" marking aa
Contextual Info: Central BCX51 BCX52 BCX53 Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

Contextual Info: M AXIM UM RATINGS PNP Value Symbol BCX17LT1 BCX19LT1 C o llector-E m itter Voltage v CEO 45 25 Vdc Collector-Base Voltage v CBO 50 30 Vdc Em itter-Base Voltage v EBO 5.0 Vdc 'c 500 m Adc Rating C ollector C urrent — C ontinuous BCX18LT1 BCX20LT1 NPN BCX17LTKD

Contextual Info: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound

marking al

Abstract: 200a smd 2sA1766
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25

hFE-1000 BC

Abstract: C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin
Contextual Info: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 875 BC 877 BC 879

bcx53

Abstract: transistor marking code AL BCX51 PNP TRANSISTOR "SOT89" marking aa
Contextual Info: BCX51 BCX52 BCX53 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

bc 352 b

Abstract: siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366
Contextual Info: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360