MARKING AE DC Search Results

marking AF

Abstract: C166 C167 C167CR SAH-C167CW-L16M c167cw-l16
Contextual Info: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet December 18, 1995 / Release 1.0 Device : Stepping Code / Marking : SAH-C167CW-L16M AE, AF This errata sheet describes the functional problems and deviations from the DC/AC specification known in this step. For backward reference, a table which

transistor fn 155

Contextual Info: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; AE-fc, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lC/lB ——2 A/—0.1 A

B82790C0513N201

Abstract: IND0009-B-E IND0163-B EMC Ferrite inductor B82790C0253N201 B82790C0474N215 B82790C0113N201 B82790C0502N201 B82790S0253N201 B82790-C0113-N201
Contextual Info: Chokes for Data and Signal Lines B82790C0*/K0*N2 Double Chokes B82790S0*/L0*N2 Rated voltage 42 VAC/80 DC Rated current 200 to 1000 mA Rated inductance 5 mH to 4,7 mH Construction • Current-compensated ring core choke with ferrite core ■ Bifilar winding B82790C0*/K0*

B82790C0474N215

Abstract: B82790C0513N201 B82790s0513N201 IND0163-B B82790C0475N265 Leaded Common Mode Chokes B82790C0113N201 B82790C0253N201 B82790C0502N201 B82790S0253N201
Contextual Info: Chokes for Data and Signal Lines B82790C0*/K0*N2 Double Chokes B82790S0*/L0*N2 Rated voltage 42 VAC/80 DC Rated current 200 to 1000 mA Rated inductance 5 mH to 4,7 mH Construction • Current-compensated ring core choke with ferrite core ■ Bifilar winding B82790C0*/K0*

SYMMETRICAL

Abstract: B82790C0113N201 B82790C0253N201 B82790C0502N201 B82790C0513N201 B82790S0253N201 IND0009-B-E IND0163-B ee-40
Contextual Info: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 Chokes for Data and Signal Lines B82790C0*/K0*N2 Double Chokes B82790S0*/L0*N2 Rated voltage 42 VAC/80 DC Rated current 200 to 1000 mA Rated inductance 5 mH to 4,7 mH Construction

Marking ae SOT89

Abstract: marking AE SOT-89 C817 BTB1424AM3 BTD2150AM3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817M3A Issued Date : 2003.10.05 Revised Date :2005.10.04 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424AM3 Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA.

BTB1424N3

Abstract: BTD2150N3 N3 SOT-23 transistor marking 2A H
Contextual Info: CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.25V(typ)(IC=-2A, IB=-100mA).

BTB1424N3

Abstract: BTD2150N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2004.09.30 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA).

Contextual Info: Filter specification TFS 400 1/4 Application The filter is suitable for GSM, DCS 1800 and dual band receivers. It can especially be used in the first IF in which full

Contextual Info: Filter Specification TFS 400 D - 1/4 Application The filter is suitable for GSM, DCS 1800 and dual band applications. It can especially be used in the first IF in which full channel

Contextual Info: Product specification 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2

Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1365 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent linearity nof DC forward current gain. 0.4 3 Low collector to emitter saturation voltage. 1 High collector current.

smd marking code fj

Abstract: smd marking 5R marking code H1 SMD SMD MARKING CODE vk smd diode code H1 marking code fj SMD diode raa marking code SMD DIODE BOOK smd diode code marking RA smd code marking LP
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE10P3 U nit: mm r Weight 0.326g Typ 30 V 10 A i 2 4 Feature 6.6 • SMD • SMD • Î S ® V f=0.4V • Ultra-Low V f=0.4V • Reverse connect protection for DC power source • DC O R-output

Contextual Info: Product specification 2SA1365 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent linearity nof DC forward current gain. 0.4 3 Low collector to emitter saturation voltage. 1 High collector current. 0.55 Super mini package for easy mounting.

Contextual Info: SN74ACT2227, SN74ACT2229 DUAL 64 x 1, DUAL 256 × 1 FIRST-IN, FIRST-OUT MEMORIES SCAS220C – JUNE 1992 – REVISED OCTOBER 1997 D D D D D D D D D D Dual Independent FIFOs Organized as: 64 Words by 1 Bit Each – SN74ACT2227 256 Words by 1 Bit Each – SN74ACT2229

N67 TRANSFORMER

Abstract: N67 transformer core SIEMENS n87 B66424-B1012-D1 B66424B1012D1 EFD TRANSFORMER B66424 marking k4 n67 transistor U250
Contextual Info: EFD 30/15/9 Core B66423 ● E core with flattened, lower center leg for especially flat transformer design ● For DC/DC converters ● EFD cores are supplied as single units Magnetic characteristics per set Σl/A le Ae Amin Ve = 0,99 mm–1 = 68 mm = 69 mm2

efd-15 transformer

Abstract: SMD MARKING CODE K3 efd-15 12 pin smd transformer B66414-B1008-D1 A7000 N87 material smd transistor marking a7 B66414-B6008-T1 B66413-G-X149 B66413-U160-L187
Contextual Info: EFD 15/8/5 Core B66413 ● E core with flattened, lower center leg for especially flat transformer design ● For DC/DC converters ● EFD cores are supplied as single units Magnetic characteristics per set Σl/A le Ae Amin Ve = 2,27 mm–1 = 34 mm = 15 mm2

B82789C0113H001

Abstract: B82789C0104H001 B82789 B82789C0513H001 B82789C0513H002 B82789C0223H001 B82789S0223H001 bifilar line dc choke circuit Inductor choke
Contextual Info: Chokes for Data and Signal Lines B82789*H I Core Choke, EIA 1812 Rated voltage 42 V /80VRated inductance 11 to 100 H Rated current 150 to 300 mA ✁ Construction Current-compensated double choke with ferrite I core Bifilar winding B82789C0. Sector winding (B82789S0.)

peters SL1301

Contextual Info: IMX70, IMY70 Series Data Sheet 70 to 90 Watt DC-DC Converters Features • RoHS compliant for all six substances • Extremely wide input voltage ranges up to 154 VDC • 1 or 2 outputs up to 48 V • Basic insulation: IMX models • Class I equipment with reinforced insulation: IMY models

B66418-B1008-D1

Abstract: B66418B1008D1 B66418-B2000 marking k4 B66417-G-X187 B66417 B66417-G-X149 B66417-U100-K187 material N87 B66417-U160-K187
Contextual Info: EFD 20/10/7 Core B66417 ● E core with flattened, lower center leg for especially flat transformer design ● For DC/DC converters ● EFD cores are supplied as single units Magnetic characteristics per set Σl/A le Ae Amin Ve = 1,52 mm–1 = 47 mm = 31 mm2

MIL-PRF-39012

Contextual Info: NOTES: 1.0 ELECTRICAL SPECIFICATIONS: 1.1 FREQUENCY RANGE: DC to 18.0 GHz 1.2 ATTENUATION ACCURACY: DC to 12.4 GHz 12.4 GHz to 18.0 GHz 0 dB + 0.75 dB + 0.75 dB 1.2.1 1.2.2 1 to 4 dB ± 0 .7 5 dB ± 0 .7 5 dB 1.2.3 5 to 8 dB ± 0 .7 5 dB ±1.00 dB 1.2.4 9 to 12 dB

B3586

Abstract: B39871-B3586-U410 C61157-A7-A56 F61074-V8070-Z000
Contextual Info: SAW Components Data Sheet B3586 SAW Components B3586 Low Loss Filter 869,0 MHz Data Sheet Ceramic package DCC6C Features • RF low-loss filter for remote control receivers ■ Package for Surface Mounted Technology SMT ■ Hermetically sealed ceramic package

2SA1362

Abstract: A1362
Contextual Info: 2SA1362 TO SH IBA 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • + 0.5 2.5 —0.3 High DC Current Gain : hpE —120—400 Low Saturation Voltage