MARKING A7 TRANSISTOR Search Results
MARKING A7 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 5962-8672601EA | Rochester Electronics LLC | Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) |
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| 5962-8672601FA | Rochester Electronics LLC | Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) |
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| 54F151/B2A | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) |
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| ICL7667MJA/883B | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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MARKING A7 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE |
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lbav99lt1glbav99lt3g | |
sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
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OCR Scan |
ot-23bal99bzx84-c43bar99+13 | |
MARKING A7 transistorContextual Info: UMA7N FMA7A Transistor, digitai, dual, PNP, with 2 resistors Features Dimensions Units: mm available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages package marking: UMA7N and FMA7A; A7 UMA7N (UMT5) 2 .0 ± 0.2 package contains two interconnected PNP digital transistors (DTA143XKA) |
OCR Scan |
sc-74adta143xkasc-70sc-59+2 | |
DMA30401Contextual Info: DMA30401 Tentative Total pages page DMA30401 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For general amplification Marking Symbol : A7 Package Code : SSSMini6-F2-B Internal Connection 6 Absolute Maximum Ratings Ta = 25 °C |
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dma30401 | |
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Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP A6 A7 CE\ CE2 NC NC WEH\ WEL\ CE2\ VCC VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A8 A9 FEATURES MARKING -8 -9 -10 A10 NC NC VCCQ VSSQ NC |
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as5ss256k18as5ss256k18dq-8/it-40oc-55oc+1 | |
DTA143X
Abstract: T148 MARKING CODE 21
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dta143x-20ma-10ma/-0-10ma+3 | |
transistors A7
Abstract: EMA7 equivalent DTA143X T148
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dta143x-20ma-10ma/-0-10ma+4 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Power Management dual transistors LUMF23NDW1T1G S-LUMF23NDW1T1G zApplication Power management circuit 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product |
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lumf23ndw1t1gs-lumf23ndw1t1gaec-q101sc-88+2 | |
LUMF23NDW1T3G
Abstract: transistors marking HJ mh 7489 789 marking
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lumf23ndw1t1gsc-883000/tapelumf23ndw1t3g+4 | |
MARKING A7 transistorContextual Info: UMA7N/ FMA7A IMB16 Transistors Digital Transistor Dual Digital Transistors for Inverter Driver I UMA7N / FMA7A •A bsolu te maximum ratings (Ta=25'C ) •F e a tu re s 1 ) Two DTA143X transistors are housed In a UMT or SMT package. Parameter •C irc u it schematics |
OCR Scan |
imb16dta143x120mw200mw+4 | |
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Contextual Info: UMA7N/ FMA7A IMB16 Transistors Digital Transistor Dual Digital Transistors for Inverter Driver I U M A 7 N / FMA7A •Features •A bsolu te maximum ratings (Ta=25‘C ) 1 ) T w o D T A 1 4 3 X tra n s is to rs a re h o u s e d in a U M T o r S M T p acka ge . |
OCR Scan |
imb16120mw200mw50ma/+1 | |
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Contextual Info: EMA7 / UMA7N / FMA7A Transistors Emitter common dual digital transistors EMA7 / UMA7N / FMA7A !External dimensions (Units : mm) !Features 1) Two DTA143X chips in a EMT or UMT or SMT package. (2) (5) R1 R1 (5)/(6) (2) (4) (5) R2 R2 ROHM : EMT5 R1 Each lead has same dimensions |
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dta143x | |
DTA143X
Abstract: T148
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dta143xt148 | |
SC74A
Abstract: S4 88a DTA144EK SC-88A footprint DTA124EK SC88A SC-74A UMA11N UMA4N FMA4A FMA1A
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uma10nfma10auma11nfma11a+11 | |
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2SK3399
Abstract: K3399 HC marking
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OCR Scan |
2sk3399k3399hc marking | |
jd 1803
Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
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OCR Scan |
2sa17742sa18212sa18852sc4617+16 | |
CHEMA7GPContextual Info: CHENMKO ENTERPRISE CO.,LTD CHEMA7GP SURFACE MOUNT Dual Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 |
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ot553ot-553chdta143xchema7gp | |
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Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHEMA7PT SURFACE MOUNT Dual Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT553 * Small surface mounting type. SOT-553 |
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ot553ot-553chdta143x-100m+2 | |
2SA733
Abstract: 2SA733 SOT-23 2SA733 equivalent A7 TRANSISTOR sot 23 2SA733 datasheet datasheet 2sa733 MARKING A7 transistor transistor 2sa733 2SC945 SOT-23 2SC945
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2sa733ot-323ot-23-150ma+13 | |
l86a
Abstract: A76A l46c 93XX56 93C86C sot 86 marking CODE e3 c76a A86A 93AA86C 93c66b
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93aa46a/b/c93lc46a/b/c93c46a/b/c93aa56a/b/c+16 | |
93XX66B
Abstract: 93C46x l46c sot 86 marking CODE e3 93C86C 93AA86B 93AA86C
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93aa46a/b/c93lc46a/b/c93c46a/b/c93aa56a/b/c+13 | |
93lc46b1
Abstract: 93cxx C46B DS21929 A56A A86C L46B 93AA86A A-56-B 93AA86B
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93aa46a/b/c93lc46a/b/c93c46a/b/c93aa56a/b/c+16 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell. |
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pd431632l32k-word32-bit768-word | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell. |
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pd431636l32k-word36-bit768-word | |