MARKING A7 TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP A6 A7 CE\ CE2 NC NC WEH\ WEL\ CE2\ VCC VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A8 A9 FEATURES MARKING -8 -9 -10 A10 NC NC VCCQ VSSQ NC

DTA143X

Abstract: T148 MARKING CODE 21
Contextual Info: EMA7 / UMA7N / FMA7A Transistors Emitter common dual digital transistors EMA7 / UMA7N / FMA7A zExternal dimensions (Units : mm) zFeatures 1) Two DTA143X chips in a EMT or UMT or SMT package. (2) (5) R1 R1 (5) (2) (4) (5) R2 R2 ROHM : EMT5 R1 Each lead has same dimensions

Contextual Info: LESHAN RADIO COMPANY, LTD. Power Management dual transistors LUMF23NDW1T1G S-LUMF23NDW1T1G zApplication Power management circuit 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product

LUMF23NDW1T3G

Abstract: transistors marking HJ mh 7489 789 marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Power Management dual transistors zApplication Power management circuit LUMF23NDW1T1G 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product

Contextual Info: UMA7N/ FMA7A IMB16 Transistors Digital Transistor Dual Digital Transistors for Inverter Driver I U M A 7 N / FMA7A •Features •A bsolu te maximum ratings (Ta=25‘C ) 1 ) T w o D T A 1 4 3 X tra n s is to rs a re h o u s e d in a U M T o r S M T p acka ge .

A7 SMD TRANSISTOR

Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
Contextual Info: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

l86a

Abstract: A76A l46c 93XX56 93C86C sot 86 marking CODE e3 c76a A86A 93AA86C 93c66b
Contextual Info: 93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1K-16K Microwire Compatible Serial EEPROMs Features: Description: • Densities from 1 Kbits through 16 Kbits

93XX66B

Abstract: 93C46x l46c sot 86 marking CODE e3 93C86C 93AA86B 93AA86C
Contextual Info: 93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1K-16K Microwire Compatible Serial EEPROMs Features: Description: • Densities from 1 Kbits through 16 Kbits

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

2SC945 SOT-23

Abstract: 2SA733 MARKING A7 transistor transistor marking A7 A7 TRANSISTOR sot 23 2SC945 SOT23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 3 2 DESCRIPTION 1 SOT-23 The UTC 2SA733 is a low frequency amplifier. 3 FEATURES 2 * Collector-Emitter voltage: BVCBO=-50V * Collector current up to -150mA

transistor marking A19

Abstract: A6 marking
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD44321181 is a 2,097,152-word by 18-bit and the μPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD432232L 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

M12180

Abstract: 100-PIN
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD432232L 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

2SA1699

Abstract: 2005A
Contextual Info: Ordering number: EN 2973 2SA1699 SA i YO PNP Epitaxial Planar Silicon Transistor i High-Voltage Driver Applications F ea tu res . H igh breakdown voltage •Adoption of MBIT process ■Excellent hps linearity A b so lu te M axim um R a tin g s at Ta = 25°C

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

HM62W8511HCJPI

Abstract: HM62W8511HCJPI-12 DSA003633
Contextual Info: HM62W8511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1283A (Z) Rev. 1.0 Nov. 9, 2001 Description The HM62W8511HCI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing