MARKING A1 4 PIN Search Results

C2C36

Abstract: VPW09197 BAS21U SC74
Contextual Info: BAS21U Silicon Switching Diode Array 5 4 6
For high-speed switching applications
Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

marking 6c1

Abstract: BAS16U SC74
Contextual Info: BAS16U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

BAV70U

Abstract: SC74 10325v
Contextual Info: BAV70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV70U A4s Pin Configuration

BAW56U

Abstract: SC74
Contextual Info: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration

BAS79A

Abstract: BAS79B BAS79C BAS79D VPS05163 Marking 2c1
Contextual Info: BAS79A.BAS79D Silicon Switching Diodes
Switching applications 4
High breakdown voltage
Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration BAS79A BAS 79A 1 = A1 2=C1/2 3 = A2 BAS79B BAS 79B 1 = A1 2=C1/2 3 = A2 BAS79C BAS 79C

BAW56S

Abstract: 6A1 diode VPS05604
Contextual Info: BAW56S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Common anode
Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration

Contextual Info: BAV 70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration

BAV99V

Contextual Info: BAV 99U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Connected in series
Internal galvanic isolated diodes in one package 3 C1/A2 C2 A1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99U A7s Pin Configuration

VPS05604

Abstract: A7s marking diode
Contextual Info: BAV 99S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Connected in series
Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99S A7s Pin Configuration

6A1 diode

Contextual Info: BAW 56U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Common anode
Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration

SC74

Abstract: JSs diode
Contextual Info: BAS 21U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74

Contextual Info: BAS 16U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74

BAV99U

Abstract: SC74
Contextual Info: BAV99U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Connected in series • Internal galvanic isolated diodes 3 in one package C1/A2 C2 A1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99U A7s

BAV99S

Abstract: VPS05604
Contextual Info: BAV99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Connected in series • Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99S A7s

EHA07182

Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s

6A1 diode

Abstract: 7006S VPS05604
Contextual Info: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking

BAS28

Abstract: VPS05178 BAS28 JTs
Contextual Info: BAS28 Silicon Switching Diode Array 3
For high-speed switching applications
Electrical insulated diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAS28 JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol

6A1 diode

Abstract: BAS70-06S VPS05604
Contextual Info: BAS70-06S Silicon Schottky Diode Array 4
General-purpose diode for high-speed switching 5 6
Circuit protection
Voltage clamping
High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S

VPS05178

Abstract: baw100
Contextual Info: BAW 100 Silicon Switching Diode Array 3 • For high-speed switching applications • Electrical insulated diodes 4 2 1 VPS05178 3 2 4 1 EHA00006 Type Marking BAW 100 JSs Pin Configuration 1 = A1 2 = A2 3 = C2 Package 4 = C1 SOT-143 Maximum Ratings Parameter

A1 SOT143

Abstract: VPS05178 BAW101 EHA07008
Contextual Info: BAW101 Silicon Switching Diode Array 3
Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage

BAS28W

Abstract: marking JTs
Contextual Info: BAS28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 4 2 3 Di1 1 Di2 1 VPS05605 2 EHA07289 Type Marking BAS28W JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT343 Maximum Ratings Parameter

Q62702-A3466

Abstract: marking CODE JTS
Contextual Info: BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings

SOT JPs

Abstract: VPS05178 EHA07008
Contextual Info: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage

BAT62

Abstract: VPS05178
Contextual Info: BAT62 Silicon Schottky Diode 3
Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2