MARKING 7200 SO8 Search Results

MARKING 7200 SO8 Result Highlights (5)

Part	Manufacturer	Description	Download
10127720-041LF	Amphenol Communications Solutions	Minitek® Pwr 3.0, Dual Row, Right Angle Through Hole Header, 4 Positions, 100u\\ Tin plating, Non GW Compatible LCP, With Pegs, Tray Packing.	PDF
51706-10207200A0LF	Amphenol Communications Solutions	PwrBlade®, Power Connectors, 2P 72S Vertical Header, Solder To Board	PDF
55720-001LF	Amphenol Communications Solutions	GIG-Array®, Mezzanine Connectors, 10mm Plug 296 Position Lead Free.	PDF
71757-200CALF	Amphenol Communications Solutions	Card Bus Ass'y, Above Mount, D/D(136Pins), R/A, Type 123, 3.3V , 0mm s/o, Right Push Rod Eject, 9.5mm Eject Travel	PDF
67997-200H	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded vertical header, Through Hole, Double Row, 00Positions, 2.54 mm (0.100in) Pitch	PDF

MARKING 7200 SO8 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2DF30L Abstract: 7200 b transistor STS2DNF30L marking 7200 so8 Contextual Info: STS2DNF30L Dual n-channel 30 V, 0.09 Ω, 3 A SO-8 STripFET Power MOSFET Features Type VDSS RDS on max ID STS2DNF30L 30V <0.11Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Application ■ Switching applications	Original	STS2DNF30L 2DF30L 7200 b transistor STS2DNF30L marking 7200 so8	PDF
4435a Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V	Original		PDF
Si4451DY Abstract: Si4451DY-T1 Si4451DY-T1-E3 Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS	Original	Si4451DY Si4451DY-T1 Si4451DY-T1-E3 S-61005-Rev. 12-Jun-06	PDF
Si4493DY-T1 Abstract: Si4493DY-T1-E3 Si4493DY Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	Si4493DY Si4493DY-T1 Si4493DY-T1-E3 S-61005-Rev. 12-Jun-06	PDF
Contextual Info: Si4364DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation	Original	Si4364DY Si4364DY-T1 Si4364DY-T1-E3 08-Apr-05	PDF
Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	Si4493DY Si4493DY-T1 Si4493DY-T1-E3 18-Jul-08	PDF
Contextual Info: Si4364DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation	Original	Si4364DY Si4364DY-T1 Si4364DY-T1-E3 18-Jul-08	PDF
Si4493DY Abstract: Si4493DY-T1-E3 Contextual Info: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4493DY 2002/95/EC Si4493DY-T1-E3 Si4493DY-T1-GE3 18-Jul-08	PDF
Si4364DY Abstract: Si4364DY-T1-E3 Contextual Info: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4364DY Si4364DY-T1-E3 Si4364DY-T1-GE3 18-Jul-08	PDF
Contextual Info: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	Si4493DY Si4493DY-T1 Si4493DY-T1-E3 08-Apr-05	PDF
Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS	Original	Si4451DY Si4451DY-T1 Si4451DY-T1-E3 08-Apr-05	PDF
Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS	Original	Si4451DY Si4451DY-T1 Si4451DY-T1-E3 18-Jul-08	PDF
Si4451DY-T1-E3 Abstract: Si4451DY Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 18-Jul-08	PDF
Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4451DY 2002/96/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 18-Jul-08	PDF

Contextual Info: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4364DY Si4364DY-T1-E3 Si4364DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI7156DP Contextual Info: New Product Si7156DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 50 0.0047 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 45 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested	Original	Si7156DP Si7156DP-T1-E3 08-Apr-05	PDF
si4459a Abstract: Si4459ADY Contextual Info: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested	Original	Si4459ADY Si4459ADY-T1-GE3 150lectual 18-Jul-08 si4459a	PDF
Si7658DP-T1-E3 Abstract: Si7658DP Contextual Info: New Product Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ) 48.5 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested	Original	Si7658DP Si7658DP-T1-E3 08-Apr-05	PDF
Contextual Info: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous	Original	Si4364DY Si4364DY-T1-E3 Si4364DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si4459ADY Contextual Info: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested	Original	Si4459ADY Si4459ADY-T1-GE3 150ed 08-Apr-05	PDF
Contextual Info: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested	Original	Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 08-Apr-05	PDF
si4497 Abstract: Si4497DY Contextual Info: New Product Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4497DY 2002/95/EC Si4497DY-T1-GE3 18-Jul-08 si4497	PDF
Contextual Info: New Product Si7156DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 50 0.0047 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 45 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested	Original	Si7156DP Si7156DP-T1-E3 18-Jul-08	PDF
SI7658DP-T1-E3 Abstract: Si7658DP Si7658DP-T1-GE3 74966 si7658 Contextual Info: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested	Original	Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 18-Jul-08 74966 si7658	PDF

MARKING 7200 SO8 Search Results

MARKING 7200 SO8 Result Highlights (5)

MARKING 7200 SO8 Datasheets Context Search

2DF30L

4435a

Si4451DY

Si4493DY-T1

Si4493DY

Si4364DY

Si4451DY-T1-E3

SI7156DP

si4459a

Si7658DP-T1-E3

Si4459ADY

si4497

SI7658DP-T1-E3