MARKING 611 SOIC Search Results

et6000

Abstract: n6010 4816P-003-221/221 Tseng Labs 84321 resistance 220 ohm 4816P00 bourns res LED DIODE marking 221
Contextual Info: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets Compliant leads for thermal expansion Miniaturized circuitry and packaging for space reduction

IC 7253

Abstract: 4800P 4814P-850-001 LTC1345
Contextual Info: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 14 PIN Used in conjunction with linear technology LTC1345 IC Compliant leads for thermal expansion Miniaturized circuitry and packaging for space reduction Space and cost savings

TSENG LABS

Abstract: N6010
Contextual Info: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 16 PIN • Used in conjunction with Mosys MD9000 series MDRAMS and Tseng Labs ET6000 Graphics Chip Sets ■ Com pliant leads for thermal expansion P O U R N S ■ Miniaturized circuitry and packaging fo r space reduction

Mn6010

Contextual Info: ASIC COMPANION NETWORK MOLDED MEDIUM BODY SOIC .225” WIDE, WITH .050” LEAD PITCH - 14 PIN POURNS • ■ ■ ■ Used in conjunction with linear technology LTC1345 IC Compliant leads for thermal expansion Miniaturized circuitry and packaging for space reduction

4422 mosfet

Abstract: 4422 datasheet DC/DC motor forward reverse control ZXMN3B04N8 ZXMN3B04N8TA ZXMN3B04N8TC
Contextual Info: ADVANCED INFORMATION ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V : RDS(on)=0.025W; ID=8.6A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

65N02

Abstract: ZXMD65N02N8
Contextual Info: ZXMD65N02N8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=20V; RDS(ON)=0.025V D=6.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

6n03

Abstract: ZXM66N03N8 ZXM66N03N8TA
Contextual Info: ZXM66N03N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=30V; RDS(ON)=0.015 D=9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

6N02

Abstract: 41ar D9A marking
Contextual Info: ZXM66N02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=20V; RDS(ON)=0.015 D=9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

65P03

Abstract: ZXMD65P03N8 ZXMD65P03N8TA ZXMD65P03N8TC
Contextual Info: ZXMD65P03N8 DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-30V; RDS(ON)=0.055⍀ D=-4.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

ZXM66P03N8

Abstract: ZXM66P03N8TA ZXM66P03N8TC
Contextual Info: ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

6P02

Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
Contextual Info: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

ZXMD65P02N8TA

Abstract: ZXMD65P02N8 ZXMD65P02N8TC
Contextual Info: ZXMD65P02N8 DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.050⍀ D=-5.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

6P02

Abstract: ZXM66P02N8 ZXM66P02N8TA ZXM66P02N8TC
Contextual Info: ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

ZXMN10A11GTA

Abstract: ZXMN10A11G ZXMN10A11GTC
Contextual Info: ZXMN10A11G DUAL 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.6⍀ D=1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them

2A02

Abstract: ZXMN2A02X8 ZXMN2A02X8TA ZXMN2A02X8TC
Contextual Info: ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.02⍀ D=7.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

6n03

Abstract: ZXM66P03N8 ZXM66P03N8TA ZXM66P03N8TC
Contextual Info: ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=-30V; RDS(ON)=0.025 D=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching

ZXMN3A06DN8

Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC 3a06d
Contextual Info: ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.035⍀ ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

ZXM64N03X

Abstract: ZXM64N03XTA ZXM64N03XTC
Contextual Info: ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

diode 2a02

Contextual Info: ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V: RDS(ON)= 0.055 ; ID= 4.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN3A02N8

Abstract: ZXMN3A02N8TA ZXMN3A02N8TC
Contextual Info: ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

6A09

Abstract: ZXMN6A09G ZXMN6A09GTA ZXMN6A09GTC
Contextual Info: ZXMN6A09G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.045 ID= 5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN3B04N8

Abstract: ZXMN3B04N8TA ZXMN3B04N8TC 3b04
Contextual Info: ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching