MARKING 54 SOT23 Search Results

SOT23 JEDEC standard

Abstract: FAN2504S25X AHW SOT23 laptop power circuit FAN2504
Contextual Info: www.fairchildsemi.com FAN2504, FAN2505 200 mA CMOS LDO Regulators Features • • • • • • • wide variety of external capacitors, and the compact SOT23-5 surface-mount package. The FAN2504/05 family of products offer significant improvements over older BiCMOS designs

marking 702 sot23

Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
Contextual Info: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,

NXP date code marking

Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Contextual Info: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

SOT23R

Abstract: 12E MARKING ZC2812E wa sot23 SOT23 WA marking 54 sot23 DSA003721
Contextual Info: ZEl SOT23 DUAL SCHOTTKY BARRIER DIODES MUE 3- NOVEWER 1995 1 h f+ 23 32 ZC2tl13E ——— ZC2812E ————— Commo,? Anodl —— — k~ Operating and Storage RATINGS. Temperature Type -. 12E Part Marking r Range Device ——. Series — 1:4E ABSOLUTE MAXIMUM

MV SOT23

Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Contextual Info: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range

Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER

marking 54 sot23

Abstract: ZC2812
Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L

BAL74

Abstract: BAR74 sot23 marking code 74
Contextual Info: BAL74/BAR74. Silicon Switching Diode
For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol

BAL99

Contextual Info: BAL99. Silicon Switching Diode
For high-speed switching applications BAL99 3 1 2 Type BAL99 Package SOT23 Configuration single Marking JFs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 80

BAL74

Abstract: MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
Contextual Info: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol

A194FH

Abstract: AOZ8000CI 84-3j mp8000ch4 A194-FH 2P3M a194 IEC-61000-4-2 SS MARKING sot23 MP-8000CH4
Contextual Info: AOS Semiconductor Product Reliability Report AOZ8000CI, rev 2 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 27, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8000CI.

Contextual Info: BAL99. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL99 !  Type BAL99 Package SOT23 Configuration single Marking JFs Maximum Ratings at TA = 25°C, unless otherwise specified

BAL74

Abstract: BAR74 BCW66
Contextual Info: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified

BAS116

Abstract: BCW66
Contextual Info: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times BAS116 !  Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage

Contextual Info: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times BAS116 3 1 2 Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Diode reverse voltage

bal99

Contextual Info: BAL99. Silicon Switching Diode • For high-speed switching applications BAL99 !  Type BAL99 Package SOT23 Configuration single Marking JFs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 80

Contextual Info: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 3 1 2 Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value

BAS116

Contextual Info: BAS116. Silicon Low Leakage Diode
Low-leakage applications
Medium speed switching times BAS116 3 1 2 Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage

BAL74

Abstract: EHA00001
Contextual Info: BAL74 Silicon Switching Diode 3
For high-speed switching applications 2 1 3 VPS05161 2 EHA00001 Type Marking BAL74 JCs Pin Configuration 1 = n.c. 2=A Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM

BAS116

Abstract: BCW66
Contextual Info: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS116 !  Type Package Configuration Marking BAS116 SOT23 single JVs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 SMBD914/MMBD914 !  Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 !  Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage

bar74

Abstract: oscillograph
Contextual Info: BAR74 Silicon Switching Diode 3
For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking BAR74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM