MARKING 53B Search Results

chip resistor marking

Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Contextual Info: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm

Contextual Info: f - Silicon N Channel M O SFET Tetrode 3SE D • 31 BF 989 &53b35Q OOlbTfl? 1 ■ S I P SIEMENS/ S P CL i SEMICONDS For amplifier and mixer stages in UHF and VHF TV tuners Low Input and output capacitance Type Marking Ordering code for versions In bulk Ordering code for

ZENER 34b

Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

MMHZ5270BPT

Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)

CMBZ-5240B

Contextual Info: 'IL CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1= ANODE 2= NC 3 = CATHODE 3.0_ ~ 2.8 0.14 0.48 538 3 2.6 2.4 _1.02 o.ar 2.00_ 1.80 0.60 0.40 Marking CMBZ5230B 31B

ZENER 34b

Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B

WM 53B

Contextual Info: SIEM ENS PNP Silicon AF Transistors • • • • BC 636 . BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 NPN Type Marking BC 636 BC 638 BC 640 Ordering Code Q68000-A3365

78-VII

Abstract: marking c627 Q62702-C626 c626 Q62702-C629 Q62702-C627 Q62702-C628 Q62702-C717 79-IX 79-VII
Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • • BCX 78 BCX 79 High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low frequencies Complementary types: BCX 58, BCX 59 NPN Type Marking BCX 78 BCX 78-VII BCX 78-VIII

pt 4515

Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7

5251B

Abstract: CMBZ-5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.8 0.48 1 0.38 ri 3 i 2.6 1 2.4 11 0.14 _!-02_ 0.89 0.60 0.40 Marking CMBZ5230B 31B

MIL-P-116

Abstract: XO-53B
Contextual Info: PACKAGING METHODS Oscillators and Resistor Networks HYBRID CRYSTAL CLOCK OSCILLATORS [Num bers In brackets Indicate m iW m etere] XO-43B XO-52B XOSM-52B, BE XO-53B XO-54B, BD, BE .550 [13.97] per Tube .570 [14.48] X O -4 3 B , X O -5 3 B , X O -5 4 B , BD, BE: 20 Pieces.

XO-53B

Abstract: 19.6608 MHz 100PPM XO-53
Contextual Info: 4bE J> VISHAY/ DALE ELECTRONICS •IMiaSb'i GGGS'iMfl b « D E I A COMPANY MODEL XO-53B C lock O scillators OF jM tfT Hybrid C rystal, R esistance W elded M eta l P ackage Low P ro file, 2 5 0 KHz to 6 0 M Hz FEATURES • • • • • • Able to withstand flow soldering

XO-53B

Contextual Info: A COMPANY MODEL XO-53B Clock O scillators OF j o a l e T Hybrid Crystal, R esistance W elded M etal Package Low Profile, 25 0 KHz to 6 0 MHz FEATURES • • • • • • Able to withstand flow soldering Wide range of standard frequencies available from stock (listed below)

XO-53B

Contextual Info: HYBRID CRYSTAL CLO CK OSCILLATOR MODEL XO-53B, 1*0 MHZ to 50 MHZ Low Profile, Resistance Welded Metal Package FEATtfMES • Able to withstand flow soldering • W ide range of standard frequencies available from stock listed below • Hermetically sealed package

Contextual Info: MODELS X O -53B and X O -53B E C lo c k O s c illa to rs H y b rid C ry s ta l, 1 .0 M H z to 8 0 M H z FEA TU R ES • TTL compatible • Enabled output optional • Industrial temperature optional • Hermetically sealed package STAN D AR D ELE C TR IC A L SPECIFICATION S

Contextual Info: bb53T31 0025566 53b • APX N AMER PHILIPS/DISCRETE BSR20 BSR20A b?E D 7 V. SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope.

Contextual Info: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television

SOT-23 MARKING T36

Abstract: BSR19 BSR19A BSR20 BSR20A
Contextual Info: • 1^53^31 0025560 53b ■ APX N AMER PHILIPS/DISCRE TE BSR20 BSR20A t.7E D SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope.

Contextual Info: International ik » i Rectifier uassMsa ooisaba 53b HEXFET Power MOSFET INTERNATIO N AL R E C T IF IE R • • • • • • • IN R PD-9.910 IR L 5 4 0 S Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive

GRC.1B.260.HR

Contextual Info: Motor Controller AC Semiconductor Motor Controller Type RSBS23.A2V.2C24. • Soft starting of 1-Phase Scroll Compressors • Enclosed solution • Integrated current limit • Rated operational voltage: 230 VACrms, 50/60 Hz • Rated operational current: up to 32A: AC-53b

astm D149

Abstract: mcm 350 500 MCM Aluminum Torque D149 MCM in One Catalog D149 diode D543 mcm 250 D-543 Thomas Betts wt
Contextual Info: NEMA Terminal Blocks Ultra Heavy Duty DESCRIPTION/APPLICATION This Ultra Heavy Duty line includes two series. The 400 series is rated up to 270 A; the 444 series is rated up to 455 A. 400 SERIES ULTRA HEAVY DUTY DESIGN ADVANTAGES 400 Series • Compact 2/0 or 250 kcmil MCM

d0311

Abstract: Buchanan B104 D0241 buchanan terminal blocks Buchanan 1546143-1 1546235-1 2b104 242 4-1437390-0 BU 110 2B112
Contextual Info: BUCHANAN Terminal Blocks Note: All part numbers are RoHS Compliant. Table of Contents—NEMA ETB Overview Selector Chart ………………………………………………………………240-243 Catalog Numbering Code ……………………………………………………………………244

NYLON WHITE ROD 66 UL94V-2

Abstract: thermal d242 D0241 Buchanan 921 BU 2735 AS D0222 D0221 2103 datasheet buchanan 200 series MEXICO FUSE
Contextual Info: Note: All part numbers are RoHS Compliant. Terminal Blocks Table of Contents—NEMA ETB Overview Selector Chart ………………………………………………………………238-241 Catalog Numbering Code ……………………………………………………………………242