MARKING 37 SCHOTTKY Search Results

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather

PD3S160

Abstract: PD3S160-7
Contextual Info: SPICE MODEL: PD3S160 NEW PRODUCT PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI ä323 Mechanical Data Features • Guard Ring Die Construction for Transient Protection · · · · · High Surge Capability Lead Free Finish, RoHS Compliant Note 1

PD3S160

Abstract: PD3S160-7
Contextual Info: PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323 Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability

PD3S160

Abstract: marking code z2
Contextual Info: PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER NEW PRODUCT Please click here to visit our online spice models database. PowerDI 323 Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability

J-STD-020D

Abstract: PD3S160 PD3S160-7
Contextual Info: PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323 Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability

V = Device Code

Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
Contextual Info: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

FOOTPRINT MELF

Abstract: melf Schottky glass BKC Semiconductors
Contextual Info: SD103AW thru SD103CW SOD-123 PLASTIC Applications SMD Schottky Diodes Guard ring protected schottky barrier. High current / low forward drop. Low cost intermediate alternative to 1 amp devices. Excellent protection for MOS devices. Used in small fast motor applications such as CD ROMs

Contextual Info: C4D08120E Silicon Carbide Schottky Diode Z-Rec Rectifier = 12 A = 37 nC 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2

Contextual Info: C4D08120E Silicon Carbide Schottky Diode Z-Rec Rectifier = 12 A = 37 nC 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2

Contextual Info: C4D08120A Silicon Carbide Schottky Diode Z-Rec Rectifier IF TC=135˚C = 11 A = 37 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF

PD3S160-7

Abstract: PowerDI323
Contextual Info: PD3S160 Green 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI 323 Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability Ultra-Small Surface Mount Package Lead-Free Finish; RoHS Compliant Notes 1 & 2

Contextual Info: PD3S160 Green 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI 323 Mechanical Data Features • • • • • • • • Guard Ring Die Construction for Transient Protection High Surge Capability Ultra-Small Surface Mount Package Lead-Free Finish; RoHS Compliant Notes 1 & 2

Contextual Info: PD3S160Q Green 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI 323 Product Summary VR V IF (A) 60 1.0 Features and Benefits VF MAX (V) @ +25°C 0.64 IR MAX (mA) @ +25°C 0.05 Description and Applications • Guard Ring Die Construction for Transient Protection

BAR43A

Abstract: marking db2 bar43c BAR43C
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAR43/A/C/S Features • • • Low Current Leakage. Surface Mount SOT-23 Package 200mW SCHOTTKY DIODE Case Material: Molded Plastic. UL Flammability

V = Device Code

Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

V = Device Code

Abstract: MC74VHC1G00
Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

PC 74 HCT 32 P

Abstract: U-046 V = Device Code
Contextual Info: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low

marking H5 sot 23-5

Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
Contextual Info: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

74VHC1GT14

Abstract: ON Semiconductor marking marking h2 SOT353 SOT-353 MARKING VL marking SBN SOT23 MARKING CODE T14 SOT23 diode marking L5 sot363 marking code V6 diode marking code v6 SOT23 H2 sc88a
Contextual Info: MC74VHC1GT14 Schmitt-Trigger Inverter / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while

V = Device Code

Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
Contextual Info: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

V = Device Code

Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
Contextual Info: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky

t08 sot-23

Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
Contextual Info: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

SOT23 "Marking Code" t04

Abstract: marking L5 sot363 marking h2 SOT353 ON Semiconductor marking V = Device Code sot363 marking code ca marking 62 ON Semi 34 sot363 t04 sot 23 marking code V6 diode
Contextual Info: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power

marking CODE W2D

Abstract: marking w2d
Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power