MARKING 2CA Search Results

6ca DIODE

Abstract: marking code 533 DIODE 6ca DIODE marking 6CA marking 6ca ON Semiconductor marking AN
Contextual Info: Central CMUD2836 CMUD2838 Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DUAL, COMMON ANODE DUAL, COMMON CATHODE MAXIMUM RATINGS: MARKING CODE: 2CA MARKING CODE: 6CA TA=25°C Peak Repetitive Reverse Voltage SYMBOL

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

MMBD501

Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2

LC-XC1222P

Abstract: h1ca MARKING 22A
Contextual Info: Individual Data Sheets For main power supplies. Cycle long life type. LC-XC1222P Dimensions mm Terminal type (option) (187) (250) Contents indicated (including the recycle marking, etc.) are subject to change without notice. Battery case resin: standard (UL94HB)

Contextual Info: Part Numbering System Vishay Vitramon Monolithic Ceramic Chip Capacitors PART NUMBERIHG SYSTEM 1 VJ 0805 A 102 K X A M T PRODUCT CASE2 DIELECTRIC CAPACITANCE CAPACITANCE TERMINATION DC MARKING PACKAGING 1This Is a general overview of Vishay Vitramon's part numbering system. Please refer to individual dielectric sections in this catalog for availability of specific

itt 2222a

Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Contextual Info: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min

hy512264

Abstract: hy512260 8 bit dRAM Controller
Contextual Info: HY512260 128Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and

marking q815

Contextual Info: H Y U N D A I - « H Y 512260 128Kx16. CMOS DRAM wlth/2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and

Contextual Info: »flYUNDA» > - • HY514260B 256Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60

HY514260B

Abstract: hy514260bjc HY514260
Contextual Info: HY514260B 256Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60

Contextual Info: •HYUNDAI HY514260B 256KX16, CMOS DRAM w ith /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60

Contextual Info: HY51V4260B Series “H Y U N D A I 256K x 16-bit CMOS DRAM with /2CAS DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 262.144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation.

C1617

Abstract: HY514260 HY514260BJ
Contextual Info: HY514260B Series •HYUNDAI 256K x 16-bit CMOS DRAM with /2CAS DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipa­

6ca DIODE

Abstract: DIODE marking 6CA DIODE 6ca marking 6ca vr 6ca marking 2ca
Contextual Info: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded

Contextual Info: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded

6ca DIODE

Abstract: DIODE marking 6CA DIODE 6ca CMUD2836 CMUD2838 marking 2ca marking IR 2CA DIODE marking 2CA vr 6ca
Contextual Info: CMUD2836 CMUD2838 SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar

CTU1S

Abstract: CTB-34 CTU-G3DR Sanken SH shv02
Contextual Info: SANKEN ELECTRIC U S A H E High Voltage Diodes D I 7 IVrm: 2—24kV ? m DDDDiaS Bio : 2mA/350mA r - 0 3 - Ì 5 T-02-0 SHV/HVR Absolute Maximum Ratings Rating/ Characteristics V rsm V rm lo If s m Tc kV (kV) (mA) (A) CC) SHV-02 Vf (V) 60HZ- Half Sine Wave

6ca DIODE

Abstract: DIODE marking 6CA
Contextual Info: Central" CMUD2836 CMUD2838 Semiconductor Corp. SURFACE MOUNT ULTRAmini" DUAL HIGH SPEED SILICON SWITCH­ ING DIODES CMUD2836 CMUD2838 DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed sili­ con switching diodes manufactured by the epitax­

Contextual Info: CMUD2836 CMUD2838 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar

PLC nais

Abstract: panasonic cmos image sensor IP67G PD-65 automotive oil pressure electronic sensor BUZZER WATERPROOF ANPD060 LED lights manufacturing technology nais pressure sensor panasonic varistor
Contextual Info: PD60/PD65 Image Processing Device Lineup MICRO-IMAGECHECKER PV310 Ultra high-speed, gray scale image processing Full set of interfaces with CompactFlash card and Ethernet A230 Character recognition & character checker type MICRO-IMAGECHECKER A110 Multi-checker V2 series

24 conductor fiber

Abstract: RG6 50 ohm coaxial cable RG6 coaxial cable utp cable coaxial 2RG6
Contextual Info: POST COMPOSITE CABLE 2 CAT5E + 2 RG6 QUAD + 2 FIBER 500’ WOODEN SPOOL part number: 294-2174 pg. 1 APPROVALS: MARKETING TECHNICAL SALES FINAL DATE: THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO VERTICAL CABLE AND MAY NOT BE DISCLOSED OR TRANSMITTED TO ANY OTHER

GM3Z

Contextual Info: SANKEN E L E C T R I C Ï' î U S A HE Rectifier Diodes D | 7^0741 Vrm:100~1000V b □ O D D U 'i b io :1.3~30A h : ' • - T .o V ,c r GM/SG R ating/ Characteristics Absolute Maximum Ratings V rsm V V rm (V) lo (A) 500 200 400 800 1000 600 800 1200 1000

samsung CL21

Abstract: CL21 105 j ECJ2VB1H104K 0805B104K500NT CL21B104KB C0805X7R500-104KNE CL21B104KBFNNNC vishay 01005 C0805X7R500 CL21 B 474
Contextual Info: Cross Reference Guide Chip Capacitors Venkel P/N C0805 X7R 500 Series/Size Temperature See Chart Characteristic Rated Voltage Capacitance 1st two digits pico - Farads are significant 1st two digits followed by are significant, number of zeroes. followed by

CTL22S

Abstract: CTB34 ctb-34 CTU-G3DR CTU1S CTUG3DR
Contextual Info: SANKEN ELECTRIC U S A 11E D I ? ? 4 1 IVrm : 100— 200V Ultra Fast Recovery Diodes 00001*43 2 I H lo : 5 — 20 A CTL | V rm V lo (A) Tstg CC) Tj CC) Ifsm (A) With 60HzHaNSineWave 100 100 200 200 100 100 200 200 100 100 200 200 Ir (mA) Vf (V) trr Irm