MARKING 1P Z Search Results

MARKING 1P

Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

fairchild 1P

Contextual Info: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.

Contextual Info: PDS, #26 PDS, #14 IDNM' "PRINT RMN FEB, 08, 2 0 0 0 IS S U E D , CDNT A C T DETAIL DATE KEY TYPE YEA R MDNTH m m CDDE 9, X, Y, Z 1, 2 , , CONTACT POS. MARKING 4PLC .(INCLUDE THE BACK SIDE) 3.8 ., C D N T A C T 1P L A T I N G 3, MATING CDNNECTDR NDTE GDLDCO, 1u n MIN, ) DVER

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

RSF05G1-1P

Contextual Info: RSF05G1−1P,RSF05G1−3P,RSF05G1−5P TOSHIBA THYRISITOR SILICON PLANAR TYPE RSF05G1−1P,RSF05G1−3P,RSF05G1−5P LOW POWER SWITCHING AND CONTROL APPLICATIONS z Repetitive Peak Off−State Voltage Repetitive Peak Reverse Voltage z Average On−State Current

marking 1p Z

Contextual Info: RSF05G1−1P,RSF05G1−3P,RSF05G1−5P TOSHIBA THYRISITOR SILICON PLANAR TYPE RSF05G1−1P,RSF05G1−3P,RSF05G1−5P LOW POWER SWITCHING AND CONTROL APPLICATIONS z Repetitive Peak Off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400V : VRRM = 400V

Contextual Info: RSF05G1−1P,RSF05G1−3P,RSF05G1−5P TOSHIBA THYRISITOR SILICON PLANAR TYPE RSF05G1−1P,RSF05G1−3P,RSF05G1−5P LOW POWER SWITCHING AND CONTROL APPLICATIONS z Repetitive Peak Off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400V : VRRM = 400V

marking 1p Z

Abstract: ina 124
Contextual Info: BZX84C2V7W - BZX84C51W 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200m W Power Dissipation Zener Voltages from 2.7V - 39V Ultra-Small Surface Mount Package Mechanical Data_ Case: SO T-323, Molded Plastic Terminals: Solderable per M IL-STD-202,

BZX84C3VO

Abstract: BZX84C2V7W BZX84C39W BZX84C3V0W BZX84C3V3W BZX84C3V6W BZX84C3V9W BZX84C4V3W BZX84C51W marking 1p Z
Contextual Info: PRELIM INARY BZX84C2V7W - BZX84C51W VISHAY 200mW SURFACE MOUNT ZENER DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features Planar Die Construction 200m W Power Dissipation Zener Voltages from 2.7V - 39V Ultra-Small Surface Mount Package SOT-323 - H ; h“ A Mechanical Data_

S3 marking DIODE

Abstract: marking CE diode Marking Code s3 diode MARKING CODE 1P marking code cj MARKING S1 100S SD101AWS SD101BWS SD101CWS
Contextual Info: SD101AWS - SD101CWS VISHAY SURFACE MOUNT SCHOTTKY BARRIER SWITCHING DIODE Ì L IT E M Z I POW ER SEMICONDUCTOR Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance Ultra-small Surface Mount Package

bav21 SOD323

Abstract: diode T3 Marking MARKING FZ BAV19WS BAV20WS BAV21 BAV21WS
Contextual Info: BAV19WS - BAV21WS VISH AY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance

S4 DIODE schottky Vishay

Abstract: marking s6 vishay marking S4 schottky S4 marking vishay marking S5 S4 DIODE schottky schottky marking S4 100S SD103AWS SD103BWS
Contextual Info: PRELIM INARY SD103AWS - SD103CWS VISHAY SCHOTTKY BARRIER SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance Ultra-Small Surface Mount Package

BZT52C15S

Contextual Info: PRELIMINARY BZT52C2V7S - BZT52C39S SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data •

transistor marking 1p Z

Abstract: 2N7002W
Contextual Info: PRELIMINARY 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Low On-Resistance: 2 .5 Q. Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package

TOSHIBA THYRISTOR

Contextual Info: URSF05G49-1P, URSF05G49-3P, URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P LOW POWER SWITCHING AND CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400 V Repetitive Peak Reverse Voltage: VRRM = 400 V

marking code zener diode wl

Abstract: marking WM wk marking diode diode marking w8 marking code w6 marking W6 diode VISHAY WL ZENER zener code wn BZT52C2V7S BZT52C39S
Contextual Info: PRELIMINARY BZT52C2V7S - BZT52C39S VISHAY SURFACE MOUNT ZENER DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes H He|^ □

Contextual Info: URSF05G49-1P, URSF05G49-3P, URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P LOW POWER SWITCHING AND CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400 V Repetitive Peak Reverse Voltage: VRRM = 400 V

100S

Abstract: 1N4448WS
Contextual Info: PRELIM INARY 1N4448WS VISHAY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance H □ I • • G Case: SO D-323, Plastic

100S

Abstract: 1N4148WS BAV16WS VISHAY 1N4148WS Rev
Contextual Info: PRELIM INARY 1N4148WS / BAV16WS VISH AY SURFACE MOUNT FAST SWITCHING DIODE LITEM ZI Ì POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance H I /k B

Contextual Info: Multi-level terminal block - ST 2,5-PE/3L/1P - 3041969 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid