MARKING 1FE Search Results

bfn23

Abstract: MARKING HC MARKING 1fe 23marking
Contextual Info: PNP Silicon High-Voltage Transistor • • • • • BFN 23 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BFN 22 NPN Type Marking

MT42L32M32D2

Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks

Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package

EN29SL160

Abstract: cFeon EN
Contextual Info: EN29SL160 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all

MT42L16M32

Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
Contextual Info: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package

MT42L16M32D1

Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
Contextual Info: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package

cFeon EN29

Abstract: cfeon en29lv320ab cFeon EN29LV320A cFeon EN eon en29
Contextual Info: EN29LV320A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

EN29PL032

Abstract: SA16 cFeon Flash chip
Contextual Info: EN29PL032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

LPDDR2-1066

Abstract: micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D
Contextual Info: 2Gb: x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 32 x 8 banks x 2 die – 8 Meg x 32 x 8 banks x 3 die – 8 Meg x 32 x 8 banks x 4 die

Contextual Info: EN29PL064/032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

TL1451 Application note

Abstract: T1451A TL1451ACN TL1451 equivalent
Contextual Info: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK

Contextual Info: LESHAN RADIO COMPANY, LTD. 1Feature 1A1 thru 1A7 * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability * Diffused junction

A-405

Contextual Info: LESHAN RADIO COMPANY, LTD. 1Feature 1A1 thru 1A7 * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability * Diffused junction

T1451A

Abstract: t1451
Contextual Info: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK

military part marking symbols triangle

Abstract: am/Uf 89
Contextual Info: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK

TL1451ACN equivalent

Abstract: TL1451ACN TL1451ACD
Contextual Info: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK

EMIF06-1005M12

Abstract: JESD97 MARKING code mx stmicroelectronics
Contextual Info: EMIF06-1005M12 IPAD 6 line low capacitance EMI filter and ESD protection in Micro QFN package Main product characteristics 12 1 Where EMI filtering in ESD sensitive equipment is required: 11 2 • LCD and CAMERA for Mobile phones 9 Computers and printers

2A1530

Contextual Info: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I ムI C~:;: :~c:r~:o :?níu~ I e m p er r er a n e It " . " ，a "t .u ". . ' " . "2 ~"'" ， m ゆD ， L 。 DIMENSION REMARKS 2 5 .4: 11 .0 T i l t0 1 component a n d curvature 0 1l e a d ss

MARKING code mx stmicroelectronics

Abstract: EMIF06-1502M12 JESD97 st micro date code show
Contextual Info: EMIF06-1502M12 6-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features 12 1 • EMI asymmetrical I/O low-pass filter 11 2 ■ High efficiency in EMI filtering 10 ■ Very low PCB space consuming: 2.5 mm x 1.5 mm ■ Very thin package: 0.6 mm max

EMIF06-1502M12

Abstract: JESD97 MARKING code mx stmicroelectronics mark MX ST
Contextual Info: EMIF06-1502M12 IPAD 6 line low capacitance EMI filter and ESD protection in Micro QFN package Main product characteristics 12 1 Where EMI filtering in ESD sensitive equipment is required: 11 2 • LCD & CAMERA for Mobile phones 9 Computers and printers

Contextual Info: EMIF06-1502M12 6-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features 12 1 • EMI asymmetrical I/O low-pass filter 11 2 ■ High efficiency in EMI filtering 10 ■ Very low PCB space consuming: 2.5 mm x 1.5 mm ■ Very thin package: 0.6 mm max

0745

Abstract: F100 LKS0745 LKS1045 LKS104512 LKS1260 LKSF100 by30 2f1001 1260T
Contextual Info: INDUCTORS INDUCTORS POWER INDUCTORS INDUCTORS INDUCTORS POWER INDUCTORS POWER INDUCTORS POWER INDUCTORS SHIELDED TYPE SHIELDED TYPE INDUCTORS SHIELDED SHIELDEDTYPE TYPE SHIELDED TYPE LKS LKS FERRITECORE CORE FERRITECORE CORE FERRITE FERRITE LKS LKS FERRITE CORE