MARKING 1147 IC 6 PIN Search Results

Contextual Info: SIEMENS PN P Silicon A F and Sw itching Tran sisto rs • • • • B C X 42 B S S 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel)

Contextual Info: ADVANCE SRAM 128Kx 8 SRAM WITH SINGLE CHIP ENABLE, CENTER POWER AND GROUND PINS FEATURES • High speed: 1 2 ,1 5 , 20 and 25ns • Multiple center pow er and ground pins for greater noise immunity • Easy m emory expansion w ith CE and OE options • A utom atic CE power down

Contextual Info: MT5C1009 SRAM 128Kx 8 SRAM WITH SINGLE CHIP ENABLE FEATURES PIN ASSIGNMENT Top View • • • • High speed: 20, 2 5 ,3 5 ,4 5 , 55 and 70ns A utom atic C hip Enable pow er dow n All inputs and outputs are TTL com patible H igh-perform ance, low -pow er C M O S double-m etal

Contextual Info: MT5C1009 S R A M 1 2 8 K x 8 S R A M WITH SINGLE CHIP ENABLE FEATURES PIN ASSIGNMENT Top View • • • • High speed: 2 0 ,2 5 ,3 5 ,4 5 ,5 5 and 70ns Automatic Chip Enable power down All inputs and outputs are TTL compatible High-performance, low-power CMOS double-metal

A8A Transistor

Abstract: SOT-23 marking a8x transistor A8J SOT-23 A8A A8A Transistor sot23
Contextual Info: MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

Contextual Info: MT4C4M4A1/B1 4 MEG X 4 DRAM MICRON DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single pow er supply: +5V ±10% • Low power, 3mW standby; 200mW active, typical (A l

Contextual Info: PRELIMINARY M T4C4M 4A1/B1 4 M EG X 4 DRAM v iic n o N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low pow'er, 3mW standby; 325mW active, typical (A l

Contextual Info: MICRON SEMICONDUCTOR INC b3E D blllSM'i ODD7bflS 522 • MRN PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM I^ IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, tim ing, functions and packages • High-performance CM OS silicon-gate process • Single power supply : +5V ±10%

Contextual Info: Raytheon Electronics Semiconductor Division ANALOG R C 6704 Triple Fixed G ain V id e o A m plifier with Separate Enable Inputs Features Applications • Triple video amplifier w ith internal resistors to set gains to +2, +1, and -1 • Independently enabled amplifiers

Contextual Info: I^ICRQN 8K SRAM MT5C6408 X 8 SRAM 8K X 8 SRAM PIN ASSIGNMENT Top View • H ig h sp eed : 9 , 1 0 ,1 2 , 1 5 , 20 an d 25n s • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly _

T4C4001JDJ-6

Abstract: T4C4001
Contextual Info: DRAM 1 MEG X 4 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x4 pinout, tim ing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • All inputs, outputs and clocks are fully TTL compatible

Contextual Info: MICRON SEMICONDUCTOR INC L7E » • 000^340 IOS ■ MT5C6408 8K X 8 SRAM l^ iic n o N SRAM 8K X 8 SRAM • High speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE1, CE2 and OE

Contextual Info: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process

Contextual Info: PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM MICRON DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low power, 3mW standby; 325mW active, typical Al

Contextual Info: ADC12D1800 ADC12D1800 12-Bit, Single 3.6 GSPS Ultra High-Speed ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

Contextual Info: ADC12D1800 ADC12D1800 12-Bit, Single 3.6 GSPS Ultra High-Speed ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

Contextual Info: ADC12D1800RF ADC12D1800RF 12-Bit, Single 3.6 GSPS RF Sampling ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

Contextual Info: ADC12D1800RF ADC12D1800RF 12-Bit, Single 3.6 GSPS RF Sampling ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

LVC1G97

Contextual Info: SN74LVC1G97 CONFIGURABLE MULTIPLE-FUNCTION GATE SCES416C – DECEMBER 2002 – REVISED APRIL 2003 D D D D D D D D D D DBV OR DCK PACKAGE TOP VIEW Available in the Texas Instruments NanoStar and NanoFree Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V

Contextual Info: ADC12D1800RF ADC12D1800RF 12-Bit, Single 3.6 GSPS RF Sampling ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

SNAS500N

Contextual Info: ADC12D1800 ADC12D1800 12-Bit, Single 3.6 GSPS Ultra High-Speed ADC Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

57B5

Abstract: 57b9 marking 57b5 j2472 1340 ax 716
Contextual Info: LM57 Resistor-Programmable Temperature Switch and Analog Temperature Sensor General Description Applications The LM57 is a precision, dual-output, temperature switch with integrated analog temperature sensor. The trip temperature TTRIP is programmable by using two external 1% resistors.

57b9

Abstract: marking 57b5 57b5 ADC 1117 105k 450v capacitor
Contextual Info: LM57 Resistor-Programmable Temperature Switch and Analog Temperature Sensor General Description Applications The LM57 is a precision, dual-output, temperature switch with integrated analog temperature sensor. The trip temperature TTRIP is programmable by using two external 1% resistors.

57b9

Abstract: 57B5 617 925 NEC 2705 L 548 NEC 2705 L 107 1340 ax 716 marking 57b5 SDA08B 57C5 nec 2561 equivalent
Contextual Info: LM57 Resistor-Programmable Temperature Switch and Analog Temperature Sensor General Description Applications The LM57 is a precision, dual-output, temperature switch with integrated analog temperature sensor. The trip temperature TTRIP is programmable by using two external 1% resistors.