MARKING 003 SOT143 Search Results

S3928

Abstract: Detector Diodes marking c sot23 marking sa2 Surface Mount RF Schottky Barrier Diodes
Contextual Info: 13 A lpha Plastic Packaged Surface Mount Schottky Mixer and Detector Diodes Features For High Volume Commercial Applications SOD 323 Industry Standard SO T-23, SO T-143, and S O D -323 Packages SOT 23 SOT 143 Tight Parameter Distribution High Signal Sensitivity

PJ 3139

Abstract: NE25137 NEC Ga FET marking L NE76084 NE25139 DUAL FET marking JE FET fet dual gate sot143
Contextual Info: N E C / CALIFORNIA 1SE NEC D b427414 Q001bS3 GENERAL PURPOSE DUAL-GATE GaAs MESFET • S U I T A B L E F O R U S E A S R F A M P L I F I E R IN U H F TUNER rss: NE25137 NE25139 O U T L I N E D I M E N S I O N S Units in mm FEATURES • LO W C 7 ^ 2 .5 “

Contextual Info: Central BAS28 Sem icon du ctor Corp. DUAL, ISOLATED HIGH SPEED SW ITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed

SEMTECH MARKING sot-143

Contextual Info: SLVE2.8 Preliminary Data Low Voltage TVS Diode Array ¡ n = [] & SLVG2.8 TEL805-498-2111 FAX:805-498-3804 PRELIMINARY DESCRIPTION FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and

Contextual Info: Preliminary Data Low Voltage TVS Diode Array SLVE2.8 SLVE3.3 SLVG2.8 SLVG3.3 TEL: 805-498-2111 PRELIMINARY DESCRIPTION FA X: 805-498-3804 FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and

marking 5a TVS SOT143

Abstract: diode Marking Code lm tvs LM E28
Contextual Info: SLVE2.8 Preliminary Data Low Voltage TVS Diode Array & SLVG2.8 TEL805-498-2111 FAX:805-498-3804 PRELIMINARY DESCRIPTION FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES_ • SU ITA B LE FOR USE AS RF AM PLIFIER IN UH FTUNER • LOW C rss: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz NE25139 POWER GAIN AND NOISE FIGURE vs.

NE25139T1U73

Abstract: NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz

marking 2U 58 diode

Abstract: marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE SOT23 MARKING KE AT-05 MARKING- L31 diode marking code 2U marking L31 SOT23
Contextual Info: W Ljm H E W L E T T Bita P A C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface M ount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/ iW at 915 MHz up to 35 mV/nW at 2.45 GHz

TO253

Abstract: LCDA15
Contextual Info: LCDA15-1 Low Capacitance TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features The LCDA15-1 is a low capacitance transient voltage suppressor TVS diode array. It is designed to protect sensitive CMOS ICs from the damaging effects of ESD and lightning. Each device will protect one line in

SST6908

Abstract: SST6910 pa104
Contextual Info: SILICONIX INC IflE D • 8554735 QOlBlbl k ■ SST6908 SERIES H ÌS S 5& " \ N-Channel JFET Circuits The SST6908 Series is much more than a JFET. The addition of back-to-back diodes effectively clamps input "over-voltage” while a highperformance JFET provides an effective amplifica­

marking JT

Contextual Info: MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 BAS28 Features • • • • • • • • • Continuous reverse voltage:max.75V High switching speed:4ns.

NEC Ga FET marking A

Abstract: NE25139T1U74 NE25139U NE25139T1U71
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz

LCDA15C-1.TCT

Contextual Info: LCDA12C-1 and LCDA15C-1 Low Capacitance TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features The LCDAxxC-1 is a low capacitance transient voltage suppressor TVS diode array. It is designed to protect sensitive CMOS ICs from the damaging effects of ESD

FET marking FL

Abstract: TRANSISTOR MARKING FA D 756 transistor BCR400 Q62702-C2479 transistor marking fl 3VS4 FLC103 Siemens transistors rf marking W4s
Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

TVS RS422

Contextual Info: SLVG2.8K UNIDIRECTIONAL TVSarray SCOTTSDALE DIVISION PRODUCT PREVIEW Microsemi’s proprietary Zener process provides low standoff voltages and the lowest standby current in the industry of 0.1µA. This 4 pin unidirectional array is designed for use in applications where protection is required at the board level from

LCDA12C-1

Abstract: LCDA15C-1 diode marking code 12L
Contextual Info: LCDA12C-1 and LCDA15C-1 Low Capacitance TVS Diode Array PRELIMINARY PROTECTION PRODUCTS Description Features The LCDAxxC-1 is a low capacitance transient voltage suppressor TVS diode array. It is designed to protect sensitive CMOS ICs from the damaging effects of ESD

Contextual Info: SLVE2.8K BIDIRECTIONAL TVSarray SCOTTSDALE DIVISION PRODUCT PREVIEW Microsemi’s proprietary process provides low standoff voltages and the lowest standby current in the industry of 0.1µA. This 4-pin bidirectional array is designed for use in applications where protection is required at the board level from voltage

SEMTECH MARKING sot-143

Abstract: SR70 R70 sot143
Contextual Info: SR70 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR70 has been specifically designed to protect sensitive components which are connected to data and transmission

U73-U74

Abstract: 14E-14
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz

NE25139

Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

SEMTECH MARKING sot-143

Contextual Info: SLVE2.8 SEMTECH Today*« Rauiki.1 & Low Voltage TVS Diode for ESD and Latch-Up Protection SLVG2.8 Revised - February 17, 1999 DESCRIPTION FEATURES The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and

fet dual gate sot143

Abstract: SGM2014M
Contextual Info: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is