NE25139T1U73 Search Results

NE25139T1U73 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE25139-T1-U73		NEC	RF FETs, Discrete Semiconductor Products, FET 900 MHZ SOT-143	Original	PDF		7
NE25139T1U73		NEC	General purpose dual-gate GaAS MESFET. Idss range 20-35 mA.	Original	PDF	54.89KB	7

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California Eastern Laboratories (CEL)


California Eastern Laboratories (CEL) NE25139-T1-U73 RF MOSFET 5V SOT143
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE25139-T1-U73	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.66	Buy Now

NE25139T1U73 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NE25139 Abstract: active double balanced mixer dual gate fet passive mixer passive mixer downconverter AN1020 NE25139T1U73 Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1020 Active Mixer Design Using the NE25139 Dual Gate MESFET Active mixers have some advantages over passive double balanced mixers. The most obvious advantage is that they provide gain instead of loss. This reduces the gain requirements on the low noise amplifier and the IF stage in a receiver.	Original	AN1020 NE25139 NE25139 active double balanced mixer dual gate fet passive mixer passive mixer downconverter AN1020 NE25139T1U73	PDF
NE25139 Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13 Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm	Original	NE25139 NE251 NE25139T1U74 24-Hour NE25139 ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13	PDF
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES_ • SU ITA B LE FOR USE AS RF AM PLIFIER IN UH FTUNER • LOW C rss: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz NE25139 POWER GAIN AND NOISE FIGURE vs.	OCR Scan	NE25139 NE251 OT-143) NE25139 E25139-T1 NE25139U71 NE25139T1U71 NE25139U72 E25139T1U72 NE25139U73	PDF
NE25139T1U73 Abstract: NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143 Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm	Original	NE25139 NE251 24-Hour NE25139T1U73 NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143	PDF
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz	OCR Scan	NE25139 NE251 OT-143) NE25139 NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73	PDF
U73-U74 Abstract: 14E-14 Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz	OCR Scan	NE25139 NE251 OT-143) NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 U73-U74 14E-14	PDF