MARK ZG Search Results

zener diode zg

Abstract: ZG zener E35A21VBR E35A21VBS
Contextual Info: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA

79RC32364

Abstract: RC32364 DNA MARKING CODE
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: M0005-07 Product Affected: 79RC32V364 DATE: June 6, 2000 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark Back Mark Date Code Other

Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: DATE: I0007-05 Product Affected: 79RC32V364 August 6, 2000 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark Back Mark Date Code Other

NEh jJ8

Abstract: k30270 LB 11911 095275-VK20BA ue09 KM 7-C 1 UF -20 100V 74S83 S0807 74LS32N z3ans
Contextual Info: R E V IS IO N S DESCRIPT'ON » * * LTR MARK AM*« P iK PXÛC1S1 Z v cmpcz procgsz z. 2 PL J L MARK PEU PE0C£5S J p 6 H A A # i WAS 9?Z7£9-toZW E 6 m * T £ D * £ / i £ r £ t d i0 £ # i/ tty * * ¡è k w - ¿ A J 4 0 1 6 9 / & J / O / i. — to * D D £ D

ZG SOT-23

Abstract: ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG
Contextual Info: SEMICONDUCTOR KTN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZG 2 1 Item Marking Description Device Mark ZG KTN2222AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

mark ZG

Abstract: KTN2222AU
Contextual Info: SEMICONDUCTOR KTN2222AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZG 1 2 Item Marking Description Device Mark ZG KTN2222AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KN2222AS

Contextual Info: SEMICONDUCTOR KN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZGA 1 2 Item Marking Description Device Mark ZGA KN2222AS hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

diode zener ZD 260

Abstract: KDZ12VV KDZ36VV sy 360 diode DIODE MARKING 9Y KDZ11VV KDZ13VV KDZ20VV diode zener ZL 27 KDZ33VV
Contextual Info: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : VSC C D Normal Voltage Tolerance about 1 2 Sharp Breakdown Characteristic.

KDZ16VV

Abstract: diode zener ZD 150 diode zener ZD 260 diode zener ZD 36 marking zn diode marking zn DIODE MARKING 9Y
Contextual Info: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.

DIODE MARKING 9Y

Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Contextual Info: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.

diode zener ZD 36

Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
Contextual Info: KDZ2.0W-36W SEM ICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA r CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES • Small Package : VSC • Sharp Breakdown Characteristic. • Normal Voltage Tolerance about ±6% .

diode gp 434

Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)

transistor rf m 1104

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK

Contextual Info: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK

diode gp 434

Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

nvidia

Abstract: NVIDIA riva tnt 128 riva tnt 0x8128 WIN32 nvidia_multitexture_combiners NVIDIA CORPORATION riva 128 Application Hint 27 0x80E3
Contextual Info: All About OpenGL Extensions, including specifications for some significant OpenGL extensions Mark J. Kilgard * NVIDIA Corporation OpenGL is an extensible low-level graphics API. Extensible is the key word. OpenGL implementations are free to extend OpenGL’s basic rendering functionality with new rendering

TRANSISTOR D 1765

Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
Contextual Info: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz

LT1ZE40A

Abstract: LT1ZG40A LT1ZJ40A LT1ZR40A LT1ZS40A LT1ZV40A ECG43
Contextual Info: Super-luminosity AlGaInP Leadless Chip LED LT1Z❏40A series 2125 Size, 0.8mm Thickness, Leadless Chip LED LT1Z❏40A series • Outline Dimensions (Unit : mm) ■ Directive Characteristics -20˚ 0.8 1.25 2.0 -60˚ 2 1 Cathode mark Recommended PWB pattern for soldering

GM5WA06250A

Abstract: LT1ZE40A LT1ZG40A LT1ZJ40A LT1ZR40A LT1ZS40A LT1ZV40A
Contextual Info: Super-luminosity AlGaInP Leadless Chip LED LT1Z❏40A series 2125 Size, 0.8mm Thickness, Leadless Chip LED LT1Z❏40A series • Outline Dimensions (Unit : mm) ■ Directive Characteristics -20˚ 0.8 1.25 2.0 -60˚ 2 1 Cathode mark Recommended PWB pattern for soldering

GM5HD95200A

Abstract: GM5HY95200A GM5UR95200A GM5EG95200A
Contextual Info: Leadless Chip LED GM5❏❏95200A series 3528 Size, 1.9mm Thickness, Leadless Chip LED GM5❏❏95200A series • Outline Dimensions ■ Radiation Diagram Unit : mm (Ta=25˚C) 3.5 3.2 2.4 2.8 2.2 -20˚ Cathode mark Relative luminous intensity(%) 0.7 -40˚

WPCE775LA0DG

Abstract: oz8116 RTS5159 OZ8116LN oz8116l wpce775la winbond wpce775la0dg G780-1P81U N10M-GE1 G780
Contextual Info: 5 4 3 2 1 ZR6 SYSTEM BLOCK DIAGRAM BOM MARK IV@: INT VGA DDR3 PWR TPS51116 EV@: STUFF FOR EXT VGA D THERMAL PROTECTION X'TAL 14.318MHz SP@: STUFF FOR UMA or VGA Penryn 479 REV:C uFCPGA CLOCK GENERATOR ICS: SELGO: SLG8SP512TTR Fan Driver Thermal Sensor G780-1P81U

MAAM02350-A2G

Contextual Info: VMfccöM w an A M P com pany Wide Band GaAs MMIC Amplifier 0.2 - 3.0 GHz Features MAAM02350-A2 CR-3 • High Gain: IK d B • Output Pow er: ORIENTATION MARK ] +1 dBm • G o o d Noise Figure: \ I (IB • Single Supply: +6 V 3 Equal Spaces @ 0.050(1.27

4. 7k ohm zener diode

Abstract: 1SZ56-30 1SZ56-07 AU01-15 1sz56
Contextual Info: Titachi/-coptoelectronics> • "J i -f— Ea de | MMTbEos □Docia4a y f r- h / s ' # — K (Zener Diode X AUOl S V Z : 7 V -3 3 V P :2 .5 W ¿5MAX (0.196) CM vqy Cathode band (Red) Weight : 1.0 (g) Unit in mm(inch) Type mark (Red) • MAXIMUM ALLOW ABLE R ATING S

KDZ20VV

Contextual Info: SEM ICONDUCTOR KDZ2.0W -36W TE CHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CO N ST A N T V O L T A G E REG U LATIO N A PPLICATIO N. R EFEREN CE V O L T A G E A PPLICATION. r CATHOD E MARK FEA T U RE S • Small Package : VSC • Sharp Breakdown Characteristic.