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b703

Abstract: A606 000D 74HC00 AN1738 MC68HC05 MC68HC705JP7 MC74HC00 3f05 motorola application note
Contextual Info: Order this document by AN1738/D Motorola Semiconductor Application Note AN1738 Instruction Cycle Timing of MC68HC05JJ/JP Series Microcontrollers By Mark L. Shaw Member, Technical Staff, Sensor Products Division Transportation Systems Group Phoenix, Arizona

Contextual Info: SBD Type：NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification cathode mark

tyco date code format

Abstract: INNER CARTON LABEL
Contextual Info: Package Specification 107-79058 梱包仕様書 October 18, 2007 REV.A3 PTH＆PCL 梱包形態 （PTH&PCL PACKING CONDITION） 1.Inner Package ② TE LABEL ① 25 pcs／1Box 2. External Package 302 270 ROHS MARK ③ TE LABEL 205 BAR CODE SEAL Dimension unit: mm

03A04

Contextual Info: SBD Type：NSQ NSQ03A04 03A04 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification cathode mark

Contextual Info: SBD Type：NSH NSH03A1 03A10 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification cathode mark

Contextual Info: SBD Type：NSH NSH03A09 03A09 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification cathode mark

Contextual Info: SMAJ SERIES 瞬变电压抑制二极管 Transient Voltage Suppressor Diodes •特征 Features ■外形尺寸和印记 Outline Dimensions and Mark ●PPP 400W ●VBR 5.0V-188V DO-214AC SMA .062(1.58) .049(1.25) .111(2.83) .094(2.40) Mounting Pad Layout 0.065

Contextual Info: SMCJ SERIES 瞬变电压抑制二极管 Transient Voltage Suppressor Diodes •特征 Features ●PPP 1500W ●VBR 5.0V-188V ■外形尺寸和印记 Outline Dimensions and Mark DO-214AB SMC .129(3.27) .112(2.85) Mounting Pad Layout .245(6.22) .220(5.59)

Contextual Info: P4KE SERIES 瞬变电压抑制二极管 Transient Voltage Suppressor Diodes •特征 ■外形尺寸和印记 Features ●PPP 400W ●VBR 6.8V-540V Outline Dimensions and Mark DO-204AL DO-41 .205(5.21) .166(4.22) 1.0(25.4) MIN ■用途 Applications

Contextual Info: SR520 THRU SR5100 肖特基二极管 Schottky Rectifier •外形尺寸和印记 Features ●Io 5.0A ●VRRM 20V-100V ●耐正向浪涌电流能力高 ●High surge current capability ■用途 Outline Dimensions and Mark DO-201AD .375(9.50) .335(8.50)

Contextual Info: HER301 THRU HER308 高效整流二极管 High Efficient Rectifier •特征 ■外形尺寸和印记 Features ●Io 3.0A ●VRRM 50V-1000V ●耐正向浪涌电流能力高 ●High surge current capability Outline Dimensions and Mark DO-201AD .375(9.50)

Contextual Info: 15A CELL SERIES 硅整流器 Silicon Rectifier •特征 Features ● Io ■外形尺寸和印记 15A Outline Dimensions and Mark 15A CELL VRRM 100V~1000V ● 电极表面高可焊性 Solderable electrode surface ● ● Silicone Rubber .087 2.2 .071(1.8)

Contextual Info: M160PG THRU M160PM 硅整流器 Silicon Rectifier •特征 Features ● Io ■外形尺寸和印记 15A Outline Dimensions and Mark MP VRRM 400V~1000V ● 玻璃钝化芯片 Glass passivated chip ● .018 0.45 .014(0.35) ● Upper Electrode Chip Bottom Electrode

Contextual Info: P6KE SERIES 瞬变电压抑制二极管 Transient Voltage Suppressor Diodes •特征 ■外形尺寸和印记 Features ●PPP 600W ●VBR 6.8V-540V Outline Dimensions and Mark DO-204AC DO-15 .300(7.60) .230(5.80 1.0(25.4) MIN ■用途 Applications

Contextual Info: FRD Type：NSF NSF03A4 03A40 •OUTLINE DRAWING 構造 ： 表面実装型拡散型シリコンダイオード F R D Construction: Surface Mounting, Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification cathode mark

Contextual Info: FRD Type：NSF NSF03A6 03A60 •OUTLINE DRAWING 構造 ： 表面実装型拡散型シリコンダイオード F R D Construction: Surface Mounting, Diffusion-type Silicon Diode 用途 ：高周波整流用 Application : High Frequency Rectification cathode mark

Contextual Info: 40A CELL SERIES 硅整流器 Silicon Rectifier •特征 Features Io ● VRRM ● ● ● ■外形尺寸和印记 40A 100V~1000V Outline Dimensions and Mark 40A CELL 电极表面高可焊性 Solderable electrode surface Silicone Rubber .087 2.2 .071(1.8)

Contextual Info: 50A CELL SERIES 硅整流器 Silicon Rectifier •特征 Features Io ● VRRM ● ● ● ■外形尺寸和印记Outline Dimensions and Mark 50A 100V~1000V 50A CELL 电极表面高可焊性 Solderable electrode surface Silicone Rubber .087 2.2 .071(1.8)

Contextual Info: 30A CELL SERIES 硅整流器 Silicon Rectifier •特征 Features Io ● VRRM ● ● ● ■外形尺寸和印记 30A 100V~1000V Outline Dimensions and Mark 30A CELL 电极表面高可焊性 Solderable electrode surface Silicone Rubber .087 2.2 .071(1.8)

Contextual Info: RL201 THRU RL207 硅整流二极管 General Purpose Rectifier •外形尺寸和印记 Features ●Io 2A ●VRRM 50V-1000V ●耐正向浪涌电流能力高 ●High surge current capability Outline Dimensions and Mark DO-204AC DO-15 .300(7.60) .228(5.80)

Contextual Info: SMA47 SERIES 稳压（齐纳）二极管 Zener Diodes •特征 Features ■外形尺寸和印记 ●Ptot 1.0W ●Vz 3.3V-100V Outline Dimensions and Mark DO-214AC SMA .062(1.58) .049(1.25) .111(2.83) .094(2.40) Mounting Pad Layout 0.065 (1.66) .187(4.75)

Contextual Info: M140PG THRU M140PM 硅整流器 Silicon Rectifier •特征 Features ● ● ● Io 10A Outline Dimensions and Mark MP VRRM 400V~1000V 玻璃钝化芯片 Glass passivated chip .018 0.45 .014(0.35) ● ■外形尺寸和印记 Upper Electrode Chip Bottom Electrode

Contextual Info: LL5817 THRU LL5819 肖特基二极管 Schottky Rectifier •特征 ■外形尺寸和印记 Outline Dimensions and Mark Features Io 1.0A ● VRRM 20V-40V ● 耐正向浪涌电流能力高 ●High surge current capability .022 0.56 .018(0.46) Applications

Contextual Info: SR320 THRU SR3100 肖特基二极管 Schottky Rectifier •外形尺寸和印记 Features ●Io 3.0A ●VRRM 20V-100V ●耐正向浪涌电流能力高 ●High surge current capability ■用途 Outline Dimensions and Mark DO-201AD .375(9.50) .335(8.50)