MARK S22 Search Results

S227

Abstract: S2274 pericom date code marking S2578 pericom S2275 S53 MARKING
Contextual Info: Pericom Semiconductor Corp. • 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: O5-19 Means of Distinguishing Changed Devices: Product Mark Date: November 29, 2005 Back Mark Product(s) Affected: SaRonix S53 series, S2274, S2275, and S2578

SFR04

Abstract: GS-22-008 SC-SFR04
Contextual Info: PRODUCT NO REVISIONS DESCRIPTION ECN REV A B BY DATE RELEASED J05-02BD H.T 5/12/’05 Added heat resistance J05-0730 H.T IO/28/’OE in OJ o c5 I DETAIL E "BURNDY MARK ’KEY SLOT FOR /EXTRA CTIO N TOOL / MARK OF /CONTACTS NO. SLIDER MOVING 2REF. D , r 3-5

Contextual Info: i_L 24.3 y^ — y 9 TRADE MARK CAVITY MARK BU H w « *- n rrv. '{ 1 ? U O f 1*1 S NOTE; tn o« m S3 ^ f a o 0 .0 5 /8 f 1 2 3 4 A PRODUCT SPEC MO. 108-5150 APPLICATION SPEC NO.114-5060 CUSTOMER MANUAL NO. CM-154J APPLIED CONTACT P/N 170452,170454, WORKMANSHIP OF THE TAB HOLE EDGES MUST BE SUCH THAT

diode gp 434

Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)

transistor rf m 1104

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK

Contextual Info: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK

093.216

Abstract: 2sk2974 093.941 transistor 2sk2974
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB

MGF0914A

Abstract: fet 4901 0648
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES

MARK "326" FET

Abstract: transistor 3669
Contextual Info: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK

F954

Abstract: f933 231 dsp hen nv 74is138 f953 F889 f922 MC68HC811A2 1023FD TAG 8602
Contextual Info: MOTOROLA Order this document by ANE415/D SEMICONDUCTOR APPLICATION NOTE ANE415 M C68HC11 Implementation of IEEE-488 Interface for DSP56000 M onitor Prepared by: Richard Soja and Mark Maiolani, Motorola Semiconductors Ltd, East Kilbride, Scotland This application note describes the implementation of an

2SK2975

Abstract: MITSUBISHI RF POWER MOS FET GR40-310 139706 t12max GR40-10 0927 TRANSISTOR 40799 17053
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK Dimensions in mm TOP (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm

diode gp 434

Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

2SK2974

Abstract: 093.216 transistor 2sk2974 GR400 093.941 9357 MITSUBISHI RF POWER MOS FET 015789 FET MARKING CR10-510
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK Dimensions in mm TOP (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm

TRANSISTOR D 1765

Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
Contextual Info: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz

MGF0913A

Abstract: 1709-1
Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES

Contextual Info: RMO3E-3 A Highly Integrated Dual-band SiGe Power Amplifier that Enables 256 QAM 802.11ac WLAN Radio Front-End Designs Chun-Wen Paul Huang, Philip Antognetti, Lui Lam, Tony Quaglietta, Mark Doherty, and William Vaillancourt Skyworks Solutions, Inc., Andover, MA 01810, USA

TQP3M9005

Abstract: JESD22-A114 N4000-13 using 7910 im3 1128 dbm qfn
Contextual Info: TQP3M9005 LNA Gain Block Applications • • • • Repeaters Mobile Infrastructure LTE / WCDMA General Purpose Wireless Product Features • • • • • • • • • • 16-pin 3x3 QFN package Functional Block Diagram Pin 1 Reference Mark 100-4000 MHz

mark s22 spdt

Abstract: AB-006
Contextual Info: Preliminary GaAs IC SPDT Non-Reflective Switch With Driver DC–6 GHz AB006M2-11 Features • Single Positive Voltage Control 0/+5 V ■ High Isolation, Non-Reflective ■ 8 Lead Hermetic Surface Mount Package -11 ORIENTATION MARK 0.150 (3.81 mm) ■ Integrated Silicon CMOS Driver

smd z13

Abstract: of bt 1696 Z12 SMD
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.

bt 1696

Abstract: transistor z14 smd transistor z15 smd z14 smd Z25 SMD MGF0805A BT 1610 circuit smd z13 fet smd transistor SMD Z27
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] DESCRIPTION Gate Mark Round Corner The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES 4.2 mm • High output power : Po = 36.5 dBm typ.

RLAS0205A

Abstract: RLAS1216A RLAS2026A RLA1722A RLAS0510A RLAS1722A Box393 microwave design, whitepaper
Contextual Info: MICROWAVE DESIGN LOW-NOISE AMPLIFIERS WHITEpaper Low-Noise Amplifiers Drop Below 1-dB Noise-Figure Mark Chris Marshall, Vice President, Wireless, Richardson Electronics Ltd., P.O. Box 393 Lafox, IL 60147; 800 737-6937, (630) 208-3637, FAX: (630) 208-2550, e-mail: rwc@rell,com,www.rfwireless.rell.com.

Contextual Info: TDK Corporation 2012 TYPE MULTILAYER DIPLEXER FOR 2.4GHz 5GHz W-LAN P/N: DPX205950DT-9108A1 [MECHANICAL DIMENSIONS] 2.0 +/- 0.15 6 1.25 +/0.15 5 4 1. GND 2. ANT COMMON 3. GND 4. LOW (2.4GHz) 5. GND 6. HIGH (5.0GHz) MARK 1 2 3 0.95 +/0.1 0.65+/-0.2 0.2±0.2

Contextual Info: VSC5529 Datasheet FEATURES ● ● ● ● ● ● ● ● Ultra-small form factor: 16 x 6 x 2.5 mm BGA Optimized for metro and long haul LiNbO3 NRZ applications Exceptional eye mark margin Excellent input sensitivity: 250 mV Wide output range: up to 7 V Low jitter