MARK 7 DIODE Search Results

FRMB1211C-TR

Abstract: 251C
Contextual Info: 3 # # [ E * SYM. S-No. : 025071 2006. _ K tt Í ZONE I ♦ REVISIONS REV. NO. A B ft DATE in * * * NTF. NO. REV. BY A »rBSÈfi- G1. 18 A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3 :7 / - F

FYMG1211C-TR

Abstract: ltt2 251C
Contextual Info: 3 # # [ E * SYM. S-No. : 025071 K tt Í ZONE I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F

FAMB1211C-TR

Abstract: diode ED 68 251C 0118mm
Contextual Info: 3 # # [ E* SYM. S-No. : 025071 2 0 0 6 . _ G1. K tt Í ZONE I ♦ REVISIONS REV. NO. A B ft DATE in * * * NTF. NO. REV. BY A »rBSÈfi- 18 A I - 7 Dimensions t 'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F

FYMB1211C-TR

Abstract: 251C
Contextual Info: 3 # # [ E * SYM. S-N o. : 025071 K Í tt ZONE I I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3:7 / - F

FAMG1211C-TR

Abstract: sfeb FAMG1211C 251C WM Mark code
Contextual Info: 3 # # [ E * E « SYM. ZONE S-No. : 025071 Í I ♦ R E V IS IO N S REV. NO. _ G1. 18 A B ft in * * * NTF. NO. DATE REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad 1. 3: 7 / - F

diode ja8

Abstract: NE y Ja8 MARK 8E diode esja ne ja8 HIGH VOLTAGE DIODE 6kv HH1T 30S3 ESJA88 ESJA88-06
Contextual Info: ESJA88 6kv, 8 k V £ ± 'J *-K : Outline Drawings HIGH VOLTAGE SILICON DIODE D 7 hNo. ESJA881*, ^ tiv~ V-7—9 lot No. \ E * « * tt« » * - ^ K s * E 5 fc * ^ * - K T T o ESJA88 is high reliability resin molded type high voltage /cathode Mark \ / ^ 2.5

Contextual Info: Super Fast Recovery Diode Single Diode OUTLINE D2FK60 Unit* mm Weight O.lötf Typ Package : 2F a y -K v -» / Cattaxlr mark 600V 1.5A Feature !> — M - •HJBEE • Small SMD • High Voltage • trr= 7 5 n s • trr-7 5 n s • <£V f=1.3V • Low Vf=1.3V

Contextual Info: BAT42, BAT43 Schottky Diodes _ FEATURES_ DO-35 ♦ << max. 0.0 7 9 2.0 C athode Mark For general purpose applications ♦ These diodes feature very low turn- 'S !:i on voltage and fast switching. These devices are protected by a PN junction

RSX501L-20

Contextual Info: RSX501L-20 Diodes Shottky barrier diode RSX501L-20 zExternal dimensions Unit : mm zApplication General rectification. CATHODE MARK 5 7 3 4 2.6±0.2 0.1±0.02 0.1 5.0±0.3 zFeatures 1) Small power mold type. (PMDS) 2) High reliability. 3) Low VF. 4.5±0.2

KDV175

Contextual Info: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHF～UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K A ・Low Capacitance : CT=0.25[pF] Typ. 1 E FEATURES G B H F ・Low Series resistance : rS=7[Ω] (Typ.).

KDV175

Contextual Info: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHFᴕUHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K H F ᴌLow Series resistance : rS=7[ή] Typ. . A ᴌLow Capacitance : CT=0.25[pF] (Typ.) 1 E FEATURES G

RB083L-20

Contextual Info: RB083L-20 Diodes Schottky barrier diode RB083L-20 !External dimensions Units : mm !Applications High frequency rectification For switching power supply 5 4.5±0.2 CATHODE MARK 7 0.1 +0.02 −0.1 5.0±0.3 !Features 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR.

Contextual Info: K /D io d e s RB751H RB751H > y * '- A VT $ < * ~ 3 7 h K Silicon Epitaxial Schottky Barrier Diodes • 1 1 ' f 7 PT & 5 2) rrS @ /D im e n s io n s Unit : mm) (D SM )o "S o CATHODE MARK • Features O.I5± 0.l SB -1) Small surface mount type (DSM). 2) High reliability.

TSOP8

Abstract: RB050PS-30
Contextual Info: RB050PS-30 Diodes Schottky barrier diode RB050PS-30 zExternal dimensions Unit : mm (6) zLand size figure 0.5±0.05 (7) (8) (5) 1pin mark φ1.4 1.5 0.15 6.6 4.56 ① 0.5 zFeatures 1) High power mold type. (TSOP8) 2) Low IR 3) High reliability 4.7 0～0.1

13B1

Abstract: E64380 PC8D52 PC8Q52 SHARP PC8D52 pc8q52 sharp
Contextual Info: PC8D52/PC8Q52 PC8D52/PC8Q52 High Collector-emitter Voltage Type Photocouplers • Features ■ Outline Dimensions Anode mark PC8D52 2.54±0.25 8 7 6 1 2 1 2 3 4 3.0±0.5 0.26±0.1 3.3 θ Anode Cathode 5 7 6 8 θ=0 to 13˚ θ Emitter Collector PC8Q52 Internal connectiondiagram

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT BAT86 Schottky Diodes FEATURES D O -35 ♦ _ max. 0 .0 7 9 2.0 -C athode Mark For general purpose applications. + This diode features low turn-on volt- \ age. The devices are protected by a PN junction guard ring against excessive volt­

ERD32

Abstract: A124 marking code
Contextual Info: ERD32 3A FAST RECOVERY DIODE * Features IÄ7F : Marking Super high speed switching • 1&VF Low VF A5 - 3 — K Color code : Orange Large current Abridged type • sn High reliability name ŒŒ? 5 7, Voltage class O ;r Mid Lot No. 0-, HBBiMEt ^ Lot No. division mark

Contextual Info: SD101A THRU SD101C Schottky Diodes FEATURES DO-35 << max. 0.0 7 9 2.0 Cathode Mark ♦ For general purpose applications. ♦ The LL101 series is a metal-on-sili- % con Schottky barrier device which is protected by a PN junction guard ring. |j| The low forward voltage drop and fast

Contextual Info: PHOTONIC DETECTORS INC. GaAlAs 940 nm Surface Mount Infrared Emitters SMT Type PDI-E909-SM PACKAGE DIMENSIONS inch mm CATHODE MARK 2 WATER CLEAR PLASTIC LENS C L 2 7° ±.004 [0.10] .126 [3.20] CL ±.004 [0.10] CL .087 [2.20] 1 ±.004 [0.10] .102 [2.60]

smd diode schottky code marking 2F

Abstract: smd diode schottky code marking nu T13c marking smd NU smd code marking 4A diode smd k9 MARKING JM smd diode marking 325 smd marking code nu
Contextual Info: Schottky Barrier Diode Single Diode m tm m o u tlin e Package : 2F D3FP3 Unit-mm Weight 0.16g Typ ij y -K -7 -9 30V 3A / Cathode mark Feature • Small SMD • Ultra-Low Vf=0.4V • K y T 'J H f f iS K it • Reverse connect protection for DC power source

1S2094

Abstract: toshiba diode do-35 H30b
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA b? D E ^ I D ^ a S O ODD13Dt O |~~ <D I S C R E T E / O P T O 67r. 03306 Silicon Epitaxial Planar Type n T ~ ~ o 7-/9 1S2094 Variable Capacitance Diode UHF, VHF AFC APPLICATIONS. Unit in mm 0Ot5 CATHODE MARK 0<X5 MAXIMUM RATINGS Ta=25°C)

4. 7k ohm zener diode

Abstract: 1SZ56-30 1SZ56-07 AU01-15 1sz56
Contextual Info: Titachi/-coptoelectronics> • "J i -f— Ea de | MMTbEos □Docia4a y f r- h / s ' # — K (Zener Diode X AUOl S V Z : 7 V -3 3 V P :2 .5 W ¿5MAX (0.196) CM vqy Cathode band (Red) Weight : 1.0 (g) Unit in mm(inch) Type mark (Red) • MAXIMUM ALLOW ABLE R ATING S

4-pin optoisolator

Abstract: CNC1H101 CNC7S101 CNC7T101 CNZ3182 optoisolator IC
Contextual Info: Optoisolators Photocouplers CNC7S101,CNZ3182,CNC7T101,CNC1H101 Optoisolators CNZ3182 LED Mark 14.74±0.3 Telephone switches Programmable controllers AC/DC input modules for measuring 1 2 3 4 5 6 7.62±0.3 6.2±0.5 CNZ3182 4 2 3 8 2 7 3 6 4 Top View 1 16

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT BAT86 Schottky Diodes FEATURES DO-35 ♦ _ max. 0 .0 7 9 2.0 -C a th o d e Mark For general purpose applications. + This diode features low turn-on volt­ age. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.