MANUALS EPITAXIAL Search Results

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB

Mitsubishi transistor databook

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES

Contextual Info: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATU RES

2SC3628

Abstract: T-46
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN E P IT A X IA L PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in V H F band mobile radio applications. Dimensions in mm FEATURES

RF POWER TRANSISTOR NPN

Abstract: mitsubishi RF POWER TRANSISTOR Mitsubishi databook 2SC3628 T-46
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in U H F band 7.2 volts operation applications. C 1 .5 M A X Dimensions in mm

12w 5d

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES

Contextual Info: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dim ensions in m m FEATURES •

package drawing T46

Abstract: 2SC3404 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 3404 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. C 1 .5 M A X D im e n s io n s in m m

rd 3153

Abstract: 2SC3022
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR TYPE DESCRIPTION 2 S C 3 0 2 2 is a silicon NPN epitaxial planar typ e transisto r sp e cifi­ OUTLINE DRAWING D im ensions in m m cally designed fo r UHF high pow er am plifier applications.

Mitsubishi databook

Abstract: Mitsubishi transistor databook transistor 2sc3379 2SC3379 T-46 transistor npn Epitaxial Silicon zs 35
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC 3379 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION OUTLINE DRAWING D im e n s io n s in m m 2 S C 3 3 7 9 is a silicon NPN epitaxial planar typ e transisto r sp e cifi­ cally designed fo r UHF pow er am plifier applications.

ISO STANDARDS SHEET METAL THINNING

Abstract: TRANSISTOR SUBSTITUTION 1993 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR SGS-Thomson zener smd eurotherm ST marking code crolles eurotherm 451 ALL TYPE IC DATA AND manual substitution BOOK IEC 68-2-27 spectrometer U.S.A Eurotherm Controls
Contextual Info: SURE 7 Semiconductor Users Reliability Evaluation Quality and Reliability Program Published by SGS-THOMSON Quality and Reliability Management “YOU HAVE MY WORD ON IT” As I noted in SURE 6, service is the number one strategic priority at SGS-THOMSON. We consider service as a

CR10-330J-T

Abstract: poon varactor diode capacitance measurement NE68119 reverse biasing a varactor diode TOKO Catalogue SMV1265 CR10-121J-T APN1005 x band varactor diode
Contextual Info: Application Note A Balanced Wideband VCO for Set-Top TV Tuner Applications APN1005 Introduction Modern set-top TV DBS tuner systems require more channel coverage, while maintaining competitive prices. This situation creates tough design goals: to improve performance and simplify design.

varactor diode for Colpitts oscillator

Abstract: APN1006 VCO circuit diagram Tuner Applications APN1006 colpitts oscillator of application Colpitts circuit design loop gain of Colpitts VCO design 4 ghz NE68533 SMV1265 SMV1265-011
Contextual Info: APPLICATION NOTE APN1006: A Colpitts VCO for Wideband 0.95–2.15 GHz Set-Top TV Tuner Applications Introduction Modern set-top DBS TV tuners require high-performance, broadband voltage control oscillator (VCO) designs at a competitive cost. To meet these goals, design engineers are challenged to

avx CR10

Abstract: APN1005 varactor diode notes semiconductors catalogue reverse biasing a varactor diode NE68119 SMV1265 SMV1265-011 NEC k 2134 transistor x band varactor diode
Contextual Info: APPLICATION NOTE APN1005: A Balanced Wideband VCO for Set-Top TV Tuner Applications Introduction VCO Model Modern set-top TV DBS tuner systems require more channel coverage, while maintaining competitive prices. This situation creates tough design goals: to improve performance and simplify

CGY2108GS

Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
Contextual Info: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services

Contextual Info: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction

sem 2106 inverter diagram

Abstract: induction cooker schematic diagram automatic brake failure indicator and engine heating alarm working principles of dc fan in toshiba air conditioner atm with an eye seminar report sem 2106 inverter transistor smd marking mx ODOMETER transistor 9015 c sem 2106 manual
Contextual Info: This version: Jan. 1998 Previous version: Nov. 1996 E2S0001-27-Y3 Introduction Thank you for supporting OKI Semiconductor products. In the rapidly advancing electronics industry, types of semiconductor applications are diversified, and customer demands for

Contextual Info: G EIM IM U M c or por at i Om LA200 Series LA250 mOBM SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: EIAJ ED-4701-1 IEC60068 repair manual suzuki The Japanese Transistor Manual 1981 JIS-C-7032 AB-6201 Diode SMD SJ 19 electron gun CRT 1978 Data catalog
Contextual Info: This version: Sep. 2001 Previous version: Nov. 1996 DATA BOOK for QUALITY/RELIABILITY INTRODUCTION Thank you for supporting Oki Semiconductor products. To welcome the dawn of a new age of unlimited potential brought about by advances in the global network

induction cooker schematic diagram

Abstract: schematic diagram induction cooker gas cooker circuit ignitor 4701-306 foundry metals quality MANUALS transistor 1411 tester diagram induction cooker yamaha amplifier a 550 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR GAS COOKER IGNITOR
Contextual Info: '04 Hand Book for QUALITY/RELIABILITY Issue Date: May 11, 2004 INTRODUCTION Thank you for supporting Oki Semiconductor products. To welcome the dawn of a new age of unlimited potential brought about by advances in the global network information revolution, the Oki semiconductor business was launched as a new company, Silicon Solution

MRF873

Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
Contextual Info: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and