MAKING A7 DIODE Search Results

KA7905

Contextual Info: www.fairchildsemi.com K A7 9 X X /K A7 9 X X A 3 -Te r m ina l 1 A N e gat ive Volt a ge Re gulat or Features Description • • • • • The KA79XX/KA79XXA series of three-terminal negative regulators are available in TO-220 package and with several fixed output voltages, making them useful in a wide

RKV5000DKK

Contextual Info: RKV5000DKK Variable Capacitance Diode for UHF/VHF tuner REJ03G0401-0100 Rev.1.00 Oct 14, 2004 Features • Low series resistance and good C-V linearity. • Super small Flat Package SFP is suitable for surface mount design. Ordering Information Type No.

MARK A7

Abstract: PUSF0002ZB-A RKV500KK making A7 DIODE
Contextual Info: RKV500KK Variable Capacitance Diode for UHF/VHF tuner REJ03G1279-0100 Rev.1.00 Oct 13, 2005 Features • Low series resistance and good C-V linearity. • Super small Flat Lead Package SFP is suitable for surface mount design. Ordering Information Type No.

Contextual Info: RKV500KK Variable Capacitance Diode for UHF/VHF tuner REJ03G1279-0100 Rev.1.00 Oct 13, 2005 Features • Low series resistance and good C-V linearity. • Super small Flat Lead Package SFP is suitable for surface mount design. Ordering Information Type No.

1SS406

Contextual Info: 1SS406 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application Low forward voltage : VF 3 = 0.50V (typ.) Low reverse current : IR= 0.5µA (max) Small total capacitance : CT = 3.9pF (typ.) Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: INTEGRATED CIRCUITS 74F776 Pi-bus transceiver Product specification IC15 Data Handbook Philips Semiconductors 1990 Dec 19 Philips Semiconductors Product specification Pi–bus transceiver 74F776 FEATURES consumption and a series diode on the drivers to reduce capacitive

1SS402

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. Low forward voltage : VF 3 = 0.50V (typ.)

1SS405

Contextual Info: 1SS405 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 High Speed Switching Application Low forward voltage : VF 3 = 0.50V (typ.) Low reverse current : IR= 0.5µA (max) Small total capacitance : CT = 3.9pF (typ.) Unit: mm Maximum Ratings (Ta = 25°C)

HN2S03T

Contextual Info: HN2S03T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03T Unit: mm High Speed Switching Application 1.2±0.05 Two independent diodes are mounted on Thin Extreme Super Mini Quad package that are suitable for higher mounting densities. : IR= 0.5µA max

HN2D03F

Contextual Info: HN2D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D03F High Speed Switching Application Unit in mm Small package Low forward voltage : VF 2 = 0.94V (typ.) Small total capacitance : CT = 2.5pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage

1SS406

Contextual Info: 1SS406 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application z Low forward voltage : VF 3 = 0.50V (typ.) z Low reverse current : IR= 0.5 A (max) z Small total capacitance : CT = 3.9pF (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

HN2S03T

Abstract: hn2s
Contextual Info: HN2S03T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03T Unit: mm High Speed Switching Application 1.2±0.05 Two independent diodes are mounted on Thin Extreme Super Mini Quad package that are suitable for higher mounting densities. : VF 3 = 0.50V (typ.)

1SS402

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. z Low forward voltage : VF 3 = 0.50V (typ.)

1SS405

Contextual Info: 1SS405 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 High Speed Switching Application Low forward voltage : VF 3 = 0.50V (typ.) z Low reverse current : IR= 0.5 A (max) z Small total capacitance : CT = 3.9pF (typ.) z Unit: mm Absolute Maximum Ratings (Ta = 25°C)

HN2D03F

Abstract: marking A7 diode
Contextual Info: HN2D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D03F High Speed Switching Application Unit in mm z Small package z Low forward voltage : VF 2 = 0.94V (typ.) z Small total capacitance : CT = 2.5pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic

HD74HC620

Abstract: HD74HC620P HD74HC623
Contextual Info: HD74HC620, HD74HC623 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0636-0200 (Previous ADE-205-516) Rev.2.00 Mar 30, 2006 Description This octal bus transceiver is designed for asynchronous two-way communication between data buses. The control

Contextual Info: HD74HCT620, HD74HCT623 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0671–0200 (Previous ADE-205-561) Rev.2.00 Mar 30, 2006 Description This octal bus transceiver is designed for asynchronous two-way communication between data buses. The control

HD74HCT620

Abstract: HD74HCT620RPEL HD74HCT623 HD74HCT623FPEL PRSP0020DC-A PRSP0020DD-B
Contextual Info: HD74HCT620, HD74HCT623 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0671–0200 (Previous ADE-205-561) Rev.2.00 Mar 30, 2006 Description This octal bus transceiver is designed for asynchronous two-way communication between data buses. The control

Contextual Info: < Dual-In-Line Package Intelligent Power Module > PSM05S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 5A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor

Mitsubishi dipipm application

Contextual Info: < Dual-In-Line Package Intelligent Power Module > PSM05S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 5A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor

HD74HC679

Abstract: PRSP0020DC-A
Contextual Info: HD74HC679 12-bit Address Comparator REJ03D0640-0200 Previous ADE-205-526 Rev.2.00 Mar 30, 2006 Description The HD74HC679 address comparator simplifies addressing of memory boards and/or other peripheral devices. The four P inputs are normally hard wired with a preprogrammed address. An internal decoder determines what input

denso

Contextual Info: < Dual-In-Line Package Intelligent Power Module > PSM03S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 3A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor

Contextual Info: < Dual-In-Line Package Intelligent Power Module > PSM03S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 3A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor

HD74HC680

Abstract: making A5.5 DIODE PRSP0020DC-A
Contextual Info: HD74HC680 12-bit Address Comparator REJ03D0641-0200 Previous ADE-205-527 Rev.2.00 Mar 30, 2006 Description The HD74HC680 address comparator simplifies addressing of memory boards and/or other peripheral devices. The four P inputs are normally hard wired with a preprogrammed address. An internal decoder determines what input