HN2S Search Results

HN2S Datasheets (23)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HN2S01F	Toshiba	Array of Independent Diodes	Original	PDF	162.39KB	4
HN2S01F	Unknown	Silicon Diode	Scan	PDF	121.48KB	2
HN2S01F	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Scan	PDF	1.4MB	2
HN2S01FU	Toshiba	Diode, Low Voltage High Speed Switching Application	Original	PDF	155.89KB	3
HN2S01FU	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Scan	PDF	1.4MB	2
HN2S01FU	Toshiba	DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)	Scan	PDF	120.47KB	2
HN2S01FU(T5L,F,T)	Toshiba	HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R	Original	PDF	202.75KB	3
HN2S01FU(TE85L,F)	Toshiba	HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R	Original	PDF	202.75KB	3
HN2S01FUTE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 10V 100MA US6	Original	PDF		3
HN2S02FU	Toshiba	High Speed Switching Application	Original	PDF	179.57KB	4
HN2S02FU	Toshiba	Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: US6; Number of Pins: 6; Features: standard; Internal connection: 3 in 1; V R (V): (max 40)	Original	PDF	117.33KB	3
HN2S02FU(TE85L,F)	Toshiba America Electronic Components	SMALL-SIGNAL SCHOTTKY BARRIER DI	Original	PDF	198.1KB
HN2S02JE	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Original	PDF	162.92KB	3
HN2S02JE(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 100MA ESV	Original	PDF		3

HN2S03FE	Toshiba	Third Silicon Epitaxial Schottky Barrier Diode	Original	PDF	163.14KB	3
HN2S03FE(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 50MA ES6	Original	PDF		3
HN2S03FU	Toshiba	High Speed Switching Application	Original	PDF	186.1KB	3
HN2S03FUTE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 50MA US6	Original	PDF		3
HN2S03T	Toshiba	Dual Silicon Epitaxial Schottky Barrier Diode	Original	PDF	109.13KB	3
HN2S03T	Toshiba	Japanese - Diodes	Original	PDF	308.88KB	4

HN2S Price and Stock

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Toshiba America Electronic Components HN2S01FUTE85LF DIODE ARRAY SCHOTT 10V 100MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HN2S01FUTE85LF	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
	HN2S01FUTE85LF	Cut Tape	2,644		1	1 $0.30 10 $0.20 100 $0.13 1000 $0.10 10000 $0.10	Buy Now
Mouser Electronics	HN2S01FUTE85LF		9,928			1 $0.30 10 $0.20 100 $0.13 1000 $0.10 10000 $0.06	Buy Now
Toshiba America Electronic Components HN2S03FUTE85LF DIODE ARRAY SCHOTT 20V 50MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HN2S03FUTE85LF	Digi-Reel	2,970		1	1 $0.38 10 $0.24 100 $0.17 1000 $0.11 10000 $0.11	Buy Now
	HN2S03FUTE85LF	Cut Tape	2,970		1	1 $0.38 10 $0.24 100 $0.17 1000 $0.11 10000 $0.11	Buy Now
Mouser Electronics	HN2S03FUTE85LF		1,027			1 $0.38 10 $0.24 100 $0.17 1000 $0.11 10000 $0.06	Buy Now
Toshiba America Electronic Components HN2S02FU(TE85L,F) DIODE ARRAY SCHOTT 40V 100MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HN2S02FU(TE85L,F)	Digi-Reel	1,948		1	1 $0.33 10 $0.21 100 $0.13 1000 $0.10 10000 $0.10	Buy Now
	HN2S02FU(TE85L,F)	Cut Tape	1,948		1	1 $0.33 10 $0.21 100 $0.13 1000 $0.10 10000 $0.10	Buy Now
Mouser Electronics	HN2S02FU(TE85L,F)		2,656			1 $0.33 10 $0.21 100 $0.11 1000 $0.09 10000 $0.06	Buy Now
Verical	HN2S02FU(TE85L,F)		311		146	1 - 10 - 100 - 1000 $0.32 10000 $0.32	Buy Now
EBV Elektronik	HN2S02FU(TE85L,F)			25 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors TDA3681TH-N2S,518 IC REG MULTIPLE VOLTAGE 20HSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TDA3681TH-N2S,518	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN2S02JE(TE85L,F) DIODE ARRAY SCHOTT 40V 100MA ESV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HN2S02JE(TE85L,F)	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
	HN2S02JE(TE85L,F)	Digi-Reel			1	1 $0.32 10 $0.26 100 $0.15 1000 $0.10 10000 $0.09	Buy Now
	HN2S02JE(TE85L,F)	Cut Tape			1	1 $0.32 10 $0.26 100 $0.15 1000 $0.10 10000 $0.09	Buy Now
Mouser Electronics	HN2S02JE(TE85L,F)		3,500			1 $0.32 10 $0.28 100 $0.16 1000 $0.10 10000 $0.05	Buy Now
Verical ()	HN2S02JE(TE85L,F)		4,000		215	1 - 10 - 100 - 1000 $0.34 10000 $0.33	Buy Now
	HN2S02JE(TE85L,F)		4,000		174	1 - 10 - 100 - 1000 $0.18 10000 $0.18	Buy Now
Quest Components	HN2S02JE(TE85L,F)		3,200			1 $1.02 10 $1.02 100 $1.02 1000 $0.41 10000 $0.36	Buy Now
TTI	HN2S02JE(TE85L,F)	Bulk			4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip One Stop	HN2S02JE(TE85L,F)	Cut Tape	4,000	0 Weeks, 1 Days	5	1 - 10 $0.32 100 $0.18 1000 $0.17 10000 $0.17	Buy Now

Find more HN2S price and stock on Findchips.com

HN2S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + • • 2 -8 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V TYP. @Ijr = 5mA 0.2 0.3 + 0.2	OCR Scan	HN2S01F HN2S01F 100mA	PDF
HN2S01F Abstract: HN2S01FU 12T1 Contextual Info: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0.1 • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 ±0.1 : VF = 0.23V TYP. @IF = 5mA	OCR Scan	HN2S01 HN2S01FU HN2S01F HN2S01FU 12T1	PDF
HN2S02JE Abstract: 2A93 Contextual Info: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE High-speed Switching Applications Unit: mm z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max.) Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S02JE HN2S02JE 2A93	PDF
HN2S01FU Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01FU HN2S01FU	PDF
HN2S03FE Contextual Info: HN2S03FE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FE Unit: mm High Speed Switching Applications z HN2S03FE is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.50V (typ.) z Low reverse current : IR= 0.5 A (max) z Small total capacitance	Original	HN2S03FE HN2S03FE	PDF
HN2S02JE Contextual Info: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE Unit: mm High-speed Switching Applications HN2S02JE is composed of two independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max.) Maximum Ratings (Ta = 25°C)	Original	HN2S02JE HN2S02JE	PDF
HN2S01F Contextual Info: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01F HN2S01F	PDF
HN2S02JE Contextual Info: HN2S02JE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE High-speed Switching Applications Unit: mm z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max.) Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S02JE HN2S02JE	PDF
HN2S03FE Contextual Info: HN2S03FE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FE Unit: mm High Speed Switching Applications z HN2S03FE is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.50V (typ.) z Low reverse current : IR= 0.5 A (max) z Small total capacitance	Original	HN2S03FE HN2S03FE	PDF
HN2S03T Contextual Info: HN2S03T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03T Unit: mm High Speed Switching Application 1.2±0.05 Two independent diodes are mounted on Thin Extreme Super Mini Quad package that are suitable for higher mounting densities. : IR= 0.5µA max	Original	HN2S03T HN2S03T	PDF
Contextual Info: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H • mN'm n n i F ■ mm ■ w ■ LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION • • HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vjr = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01F HN2S01F 100mA	PDF
HN2S01 Contextual Info: TO SHIB A HN2S01FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 7 H N < ; n i F h LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0 . • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 + 0.1 -H : Vjr = 0.23V TYP. @Ip = 5mA	OCR Scan	HN2S01FU HN2S01F 100mA HN2S01	PDF
Contextual Info: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit: mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01F HN2S01F	PDF
Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01FU HN2S01FU	PDF

HN2S03FE Abstract: A2 marking diode Contextual Info: HN2S03FE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FE Unit: mm High Speed Switching Applications HN2S03FE is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.50V (typ.) Low reverse current : IR= 0.5µA (max) Small total capacitance	Original	HN2S03FE HN2S03FE A2 marking diode	PDF
HN2S01FU Contextual Info: HN2S01FU 東芝ダイオードシリコンエピタキシャルショットキバリア形 HN2S01FU ○ 低電圧高速スイッチング用単位: mm z 独立した 3 個の SBD を搭載 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA 絶対最大定格 (Ta = 25°C)	Original	HN2S01FU 100mA HN2S01FU	PDF
Contextual Info: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01F HN2S01F	PDF
Power DIODES, toshiba Abstract: HN2S01FU Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application l HN2S01FU is composed of 3 independent diodes. l Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C)	Original	HN2S01FU HN2S01FU Power DIODES, toshiba	PDF
HN2S03FU Contextual Info: HN2S03FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU Unit: mm High Speed Switching Application z HN2S03FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.50V (typ.) z Low reverse current : IR= 0.5 A (max) z Small total capacitance	Original	HN2S03FU HN2S03FU	PDF
HN2S03FU Abstract: marking a8 40110 application notes Contextual Info: HN2S03FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU Unit: mm High Speed Switching Application z HN2S03FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.50V (typ.) z Low reverse current : IR= 0.5 A (max) z Small total capacitance	Original	HN2S03FU HN2S03FU marking a8 40110 application notes	PDF
HN2S03FE Contextual Info: HN2S03FE 東芝ダイオードエピタキシャルショットキバリア形 HN2S03FE ○ 高速スイッチング用単位: mm z エクストリームスーパーミニ 6 端子に独立したダイオードを 3 個搭載しており超高密度実装に最適です。	Original	HN2S03FE HN2S03FE	PDF
HN2S02FU Abstract: Q2 1 P200 Contextual Info: HN2S02FU 東芝ダイオードシリコンエピタキシャルショットキバリア形 HN2S02FU ○ 超高速スイッチング用単位: mm z 独立した 3 個の SBD を搭載。 z 順方向電圧が低い。 : VF 3 = 0.54V (標準) z リーク電流が小さい。	Original	HN2S02FU 100mA HN2S02FU Q2 1 P200	PDF
HN2S01FU Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C) Characteristic	Original	HN2S01FU HN2S01FU	PDF
Contextual Info: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01 HN2S01F 100mA HN2S01FU	PDF

HN2S Search Results

HN2S Datasheets (23)

HN2S Price and Stock

Toshiba America Electronic Components HN2S01FUTE85LF

Toshiba America Electronic Components HN2S03FUTE85LF

Toshiba America Electronic Components HN2S02FU(TE85L,F)

NXP Semiconductors TDA3681TH-N2S,518

Toshiba America Electronic Components HN2S02JE(TE85L,F)

HN2S Datasheets Context Search

HN2S01F

HN2S02JE

HN2S01FU

HN2S03FE

HN2S02JE

HN2S01F

HN2S02JE

HN2S03FE

HN2S03T

HN2S01

HN2S03FE

HN2S01FU

Power DIODES, toshiba

HN2S03FU

HN2S03FU

HN2S03FE

HN2S02FU

HN2S01FU