MACRONIX MARKING Search Results

MX16C450

Abstract: MX82C50A Macronix marking MX82C50 mx83c
Contextual Info: MACRONIX INC S3E » SbûflêôS Q O G G M G G M X 16C 450 - M X 82C 50A - M X 82C 50 m b74 • HA C X A ~T~ 7 S '- 3 7~ 0 5 ASYNCHRONOUS COMMUNICATIONS ELEMENT FEATURES DESCRIPTION • Easily interfaces to most popular microprocessors • Adds or deletes standard

LF8200

Abstract: 1gw 82 NDK America diode 1gw pt4171s S558-5999-15 Macronix marking resistors 1k ohm valor st6118 10/100 BASE TRANSFORMERS LAN COMPONENTS
Contextual Info: PRELIMINARY MX98715BEC APPLICATION NOTE 1. INTRODUCTION The purpose of this application note is to describe the implementation of a PCI bus master 100 Base-TX Fast Ethernet node using MXIC’ highly integrated single chip Fast Ethernet NIC controller MX98715BEC. In details,

mt 1389 fe

Abstract: MX82C50A MCR 65-6 equivalent Macronix marking VL16C451 MxL6 mark l8r MX82C50
Contextual Info: 34E D MACR O N I X INC sbflfiaae gqggddt ? • "T-7S-T?- ö S MX16C451E PARALLEL/ASYNCHRONOUS COMMUNICATIONS ELEMENT DESCRIPTION The MX16C451E is an universal synchronous receiver and transmitter with a bidirectional CENTRONICS type parallel printer port. An internal programmable baud rate generator is provided to select transmit and receive clock rates from

BCM43362

Abstract: BCM43362 SPI Macronix marking KINGBRIGHT Catalog
Contextual Info: Preliminary Specification Number : SP-ZV1CD-B WiFi Module Data Sheet Broadcom BCM43362 WiFi + ST Micro STM32F405 MCU Tentative P/N : LBWA1ZV1CD-716 Preliminary & Confidential < Specification may be changed by Murata without notice > Murata Manufacturing Co., Ltd.

29F001

Abstract: MX29F001T 29f001t
Contextual Info: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • Status Reply – Data polling & Toggle bit for detection of program and erase cycle completion. • Chip protect/unprotect for 5V only system or 5V/12V system • 100,000 minimum erase/program cycles

Contextual Info: MX29F022/022NT/B 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply - 30mA maximum active current - 1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

MX29F004B

Abstract: MX29F004T SA10 29f004t
Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

29f001

Contextual Info: MX29F001T/B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES • • • • 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current

29f004t

Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

MX29F004B

Abstract: MX29F004T SA10
Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

MX29F040QC-70

Abstract: MX29F040 29F040-70 29F040 555H MX29F040QC-55 29F040-55
Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

MX29F040PC-90

Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

MX29F040

Abstract: 29F040-70 555H MX29F040QC-70G MXIC PB FREE
Contextual Info: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

SA02H

Abstract: 29l8100
Contextual Info: Introduction Selection Guide MX29L8100T/B 8M-BIT[1M x 8/512K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES - Erase suspend capability - Fast erase time: 50ms typical for chip erase • Auto Page Program operation - Automatically programs and verifies data at

MX29f4000

Abstract: 555H
Contextual Info: MX29F4000 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

MX29F400T

Abstract: SA10
Contextual Info: MX29F400T/B 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY FEATURES • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption

Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

555H

Abstract: MX29F200B MX29F200T
Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

29F200T

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

29F100T

Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

MX29F400BTC-55

Abstract: MX29F400BMC-55 2223H MX29F400BTC-70
Contextual Info: MX29F400T/B 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY FEATURES • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption

29f002

Contextual Info: MX29F002/002NT/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%