29F4000
Abstract: marking macronix MX29f4000 555H
Contextual Info: 29F4000 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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mx29f4000512kx855/70/90/120ns64k-byte+6pm0629may/29/2000jun/12/200129f4000marking macronix555h
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29F4000
Abstract: 29F4000-70 29f400 MX29f4000 555H
Contextual Info: 29F4000 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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mx29f4000512kx855/70/90/120ns64k-byte+7dec/20/1999pm0629may/29/200029f400029f4000-7029f400555h
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29F4000
Abstract: 29f400 MX29f4000 555H IN3064
Contextual Info: 29F4000 AUTOMATIC PROGRAMMING AUTOMATIC ERASE ALGORITHM The 29F4000 is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need to have time out sequence nor to verify the data
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mx29f4000dec/20/1999pm062929f4000+329f400555hin3064
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MX29f4000
Abstract: 555H
Contextual Info: 29F4000 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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mx29f4000512kx855/70/90/120ns64k-byte+3dec/20/1999pm0629555h
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