MA64 Search Results

Contextual Info: AURORA, IL. 60505 CONNOR—WINFIELD PHONE 63 0 8 5 1 -4 7 2 2 CORPORATION FAX (630) 8 5 1 -5 0 4 0 ACMOS ENABLE/DISABLE TRISTATE OUTPUT MA61R SPECIFICATIONS I MA62R MA63R 13MHz t o Frequency Range ±25ppm MA64R 100MHz ±50ppm ± 1 OOppm ±20ppm Frequency S tability

ma649

Contextual Info: MA111 Fast Recovery Diodes FRD MA649 Silicon planer type (cathode common) Unit : mm High reverse voltage VR ● Low forward voltage V F ● Fast reverse recovery time trr 2.7±0.2 ø3.1±0.1 4.0 14.0±0.5 1.4±0.1 Solder Dip M Di ain sc te on na tin nc ue e/

MA649

Contextual Info: MA111 Fast Recovery Diodes FRD MA649 Silicon planer type (cathode common) Unit : mm 16.7±0.3 High reverse voltage VR 4.0 Fast reverse recovery time trr 14.0±0.5 ● 1.4±0.1 Solder Dip Low forward voltage V F ue pl d in an c se ed lud pl vi an m m es si

panasonic av-150

Abstract: MA2B064 MA64
Contextual Info: Trigger Devices MA2B064 MA64 Silicon planar type trigger device Unit : mm Thyristor element 24 min. • Features 4.5 max. • Satisfactory symmetry of VBO • Large VO and small IBO ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Average total power dissipation

Contextual Info: Trigger Devices MA2B064 MA64 Silicon planar type trigger device Unit: mm Thyristor element • Satisfactory symmetry of VBO • Large VO and small IBO 24 min. Symbol Average total power dissipation P(AV) Peak current*1 IPM Operating ambient temperature*2

panasonic av-150

Abstract: MA2B064 MA64
Contextual Info: Trigger Devices MA2B064 MA64 Silicon planar type trigger device Unit: mm Thyristor element • Satisfactory symmetry of VBO • Large VO and small IBO 24 min. φ 1.78±0.15 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Average total power dissipation

Contextual Info: Trigger Devices MA2B064 MA64 Silicon planar type trigger device Unit: mm Thyristor element • Features 24 min. φ 1.78±0.15 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Average total power dissipation P(AV) 150 mW IPM 2.0 A Operating ambient

MA2B064

Abstract: MA64
Contextual Info: Trigger Devices MA2B064 MA64 Silicon planar type trigger device Unit: mm M Di ain sc te on na tin nc ue e/ d Thyristor element 24 min. 4.0±0.5 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Average total power dissipation P(AV) 150

MA151K

Abstract: OH00035
Contextual Info: Diodes Composite Elements , Triggers, Hall Elements • Triggers DO-35 (D27) In << C L £ Package (A) Leadless (D30) MA64 MA2R064 150 V bo Topr ( ”C) 2!) 100 Ibo 1 A) min (V) max (V) Ib O 28 36 V max (V) typ (/iA ) (M > VB0 10 100 1 )T a = 2 5 ° C ,t < 1 0 / / s, f= 6 0 H z

MA6400

Contextual Info: HYBRID I.C.s "Hi-Net" nickicon Hybrid 1C for Control Circuit of Power Supply Higher Harmonics MA6400B • Feature This control circuit suited for power supplies and inverters for the higher harmonics application. Very high power factor im provem ent can be obtained by boosting

MA649

Contextual Info: MA111 Fast Recovery Diodes FRD MA649 Silicon planer type (cathode common) Unit : mm ● Low forward voltage V F ● Fast reverse recovery time trr 14.0±0.5 16.7±0.3 High reverse voltage VR 4.2±0.2 2.7±0.2 ø3.1±0.1 4.0 ● 5.5±0.2 1.4±0.1 Solder Dip

MA61

Abstract: MA62 MA64 MA63
Contextual Info: AURORA, IL. 60505 CONNOR—WINFIELD CORPORATION PHONE 63 0 8 5 1 -4 7 2 2 FAX (630) 8 5 1 -5 0 4 0 8 PIN DIP ACMOS MA61 SPECIFICATIONS MA62 Frequency Range MA63 MA64 13MHz to 100MHz ±25ppm ±50ppm ± 1 OOppm ±20ppm Frequency Stability (Inclusive o f calibration tolerance a t 25’ C and operating tem perature range)

MA64

Abstract: 30K-70K
Contextual Info: MA111 Triggers MA64 Silicon planer type trigger element Unit : mm Thyristor element • Features Large VO and small IBO Color indication Blue ● ø0.56 max. 24 min. Satisfactory symmetry of VBO 4.5 max. ● 24 min. ø1.95 max. ■ Absolute Maximum Ratings (Ta= 25˚C)

m MA643

Abstract: MA689 ir d10 ir d10-D10 ma752 MA7D50 MA7D61 MA555 MA649 MA652
Contextual Info: Diodes, Triggers • Schottky Barrier Diodes SBD (For Power) Main Characteristics (Ta = 2 5 "C) Type No. Category A A A Vr I f(AV) (V) (A) Main Characteristics (Ta =2 5 °C) Package Category Ir ter * Vf max.(V) typ.(ns) ■ Fast Recovery Diodes (FRD) No.

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Mil-55681

Abstract: MA27 MA80 MA826 MB22-6 MA68
Contextual Info: APPLICATION SPECIFIC CAPACITORS HIGH FREQUENCY CERAMIC CAPACITORS MA/MB Series OUTSTANDING CHARACTERISTICS • Miniature size ■ Very high Q at high frequencies ■ High RF power capabilities ■ Impervious to environmental conditions ■ Low dissipation factors

tundra scv64

Contextual Info: Table of Contents 1 General Information. 1-1 1.1 Introduction. 1-1 1.2

Contextual Info: MKE02Z32VQH4 Information General Information Package Information Environmental and Compliance Information Manufacturing Information Ordering Information Product/Process Change Notice PCN Operating Characteristics General Information Parameter Value

MA661

Contextual Info: • Schottky Barrier Diodes SBD (For Power) n Type No. Main Characteristics (Ta =25 "C) Vf Vr Ir tr* max.(V) typ.(ns) (mA) (V) Package No. ■ —' < r Category A A A ■ Fast Recovery Diodes (FRD) ■ .- ■ MA749/A 40/45 5 0.55 11 1 TO-220(F) D55

MA6400

Contextual Info: n ic H i c o n HYBRID I.C.s "Hi-Net" 500MHz Low Pass Filter 3 2.7W X 13.3H X 2T mm This will guarantee 45W of input power, with quite small loss and large attenuation at the insertion. The package is very thin with small installation area. (Code ZHBA1580A{B)

Contextual Info: Order this document by 3VFPMU64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M DRAM Dual-ln-Line Memory Module DIMM X 64 3.3 V, FPM, Unbuffered 32 Megabyte • JEDEC-Standard 168-Lead Dual-ln-Line Memory Module (DIMM) • Single 3.3 V Power Supply, LVTTL-Compatible Inputs and Outputs

TP890

Contextual Info: FULL-LINE CATALOG39 MultiMeters | Clamp Meters | Thermometers | Airflow Meters | Light Meters | Sound Meters Water Quality Testers | Tachometers | Humidity & Moisture Meters | Video Inspection Cameras www.extech.com Call us or e-mail: 877-439-8324 orders@extech.com.

SMDK2410

Abstract: LTD79W298L30GK LTV350QV S3C2413 lcd 240x320 OPENice-A1000 SMDK2413 LTV350 S3C2413X ltd79w298
Contextual Info: S3C2413X 32-BIT RISC MICROPROCESSOR APPLICATION NOTE Revision 1.01 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or

MA644

Abstract: MA641BT08TADG60 MA641BT08TADG70 MA642BT08TADG60 MA642BT08TADG70 MA644CT00TADG60 MA644CT00TADG70 dynamic ram 8mb
Contextual Info: Order this document by 5VFPMU64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2, 4M x 64 DRAM Dual-In-Line Memory Module DIMM 5 V, FPM, Unbuffered 1M x 64 (8MB), 2M x 64 (16MB) 168–LEAD DIMM CASE 1115A–01 8, 16, and 32 Megabyte • • • • • •