MA3XD11 Search Results

MA3XD11

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 1 A rectification is possible

Contextual Info: Composite Transistors XN09D57 Silicon PNP epitaxial planar type Tr Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 1 2 • Basic Part Number • XN09D57 + MA3XD11 Display at No.1 lead 10° SBD Symbol Rating

MA3XD11

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 5˚ ue pl d in

MA3XD11

Contextual Info: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.5 − 0.05 1.45 0.95 1 0.95 3 + 0.1 + 0.2 2.9 − 0.05 • Sealed in the Mini type 3-pin package • Allowing to rectify under (IF(AV) = 1 A) condition

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl lan nclu

MA3XD11

Contextual Info: Diodes SMD Type Schottky Barrier Diodes MA3XD11 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage VF 0.55 IF AV = 1 A rectification is possible 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • Basic Part Number • XN9D57 + MA3XD11

Contextual Info: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Rating Unit VR 20 V VRRM 25 V IF(AV) 1 A IFSM 3

MA3XD11

Contextual Info: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.2 2.90+0.20 –0.05 VR 20 V Repetitive peak reverse-voltage

MA3XD11

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo

MA3XD11

Abstract: XN09D57
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • Basic Part Number • XN9D57 + MA3XD11

Contextual Info: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Unit VR 20 V VRRM 25 V IF(AV) 1 A IFSM 3 A Junction temperature

MA3XD11

Contextual Info: Schottky Barrier Diodes SBD MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.5 − 0.05 1.45 0.95 1 0.95 3 + 0.1 + 0.2 2.9 − 0.05 • Sealed in the Mini type 3-pin package • Allowing to rectify under (IF(AV) = 1 A) condition

MA3XD11

Abstract: XN09D57
Contextual Info: Composite Transistors XN09D57 Silicon PNP epitaxial planar type Tr Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • Basic Part Number • XN9D57 + MA3XD11 1 2 SBD 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage

Contextual Info: Product specification MA3XD11 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage VF 0.55 IF AV = 1 A rectification is possible 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 1 A rectification is possible

MA3XD11

Abstract: XN09D57
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 For DC-DC converter M Di ain sc te on na tin nc ue e/ d • XN9D57 + MA3XD11

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 0.30+0.10

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FS Oncore

Abstract: MG4100 CTS 197-421 FS Oncore GPS motorola GPS receiver module AN2671 ST MAX3232 c9012 32KHZ C90-12
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2671/D Rev. 0, 01/2004 FS Oncore Schematics Technology OVERVIEW Freescale Semiconductor, Inc. Whether your product is in the design phase or is even an existing platform – the FS Oncore module can be added easily in an extremely small space