MA3S795E Search Results

MA3S795E

Abstract: MA795WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching • Package  High-density mounting is possible  Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package  Features M Di ain sc te on na tin nc ue e/ d  Code SSMini3-F3  Pin Name

MA3S795D

Abstract: MA3S795E MA795WA MA795WK
Contextual Info: Schottky Barrier Diodes SBD MA3S795D (MA795WA), MA3S795E (MA795WK) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 0.88+0.05 –0.03 3˚ 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 –0.03 1.60+0.05 –0.03

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching  Features • Package  High-density mounting is possible  Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V

104 M3D

Contextual Info: Schottky Barrier Diodes SBD MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IFM 150 mA Series Double * Forward current (DC)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package  Features  Code SSMini3-F3  Pin Name 1: Anode 1 2: Anode 2 3: Cathode

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package  Features  Code SSMini3-F3  Pin Name 1: Anode 1 2: Anode 2 3: Cathode

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package  Features  Code SSMini3-F3  Pin Name 1: Anode 1 2: Anode 2 3: Cathode

MA3S795E

Abstract: MA795WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching • Package  High-density mounting is possible  Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V

MA3S795E

Abstract: MA795WK
Contextual Info: Schottky Barrier Diodes SBD MA3S795E (MA795WK) Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits 3 + 0.05 + 0.05 0.60 − 0.03 0.12 − 0.02 0.28 ± 0.05 2 • Absolute Maximum Ratings Ta = 25°C Symbol 1 + 0.05 • Extra-small (SS-mini type) package, allowing high-density mounting

104 M3D

Abstract: MA3S795D MA3S795E MA795WA MA795WK SC-89 ARE M3D
Contextual Info: Schottky Barrier Diodes SBD MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IFM 150 mA Double * Forward current (DC)

by 02 be

Abstract: measure MA3S795D MA3S795E MA795WA MA795WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795D (MA795WA), MA3S795E (MA795WK) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 0.88+0.05 –0.03 3˚ 0.28±0.05 (0.51)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795DG, MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package • Code SSMini3-F3 • Pin Name MA3S795DG 1: Cathode 1 2: Cathode 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching • Package  High-density mounting is possible  Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

k11 zener diode

Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA716

Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742

Contextual Info: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3