MA3G Search Results

SC92

Abstract: SC-92
Contextual Info: Schottky Barrier Diodes SBD MA3G751, MA3G751A (MA751, MA751A) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter Symbol Repetitive peak MA3G751 Rating VRRM

MA3G751

Abstract: MA3G751A 24t0
Contextual Info: Schottky Barrier Diodes SBD MA3G751, MA3G751A Silicon epitaxial planar type (cathode common) Unit : mm • Forward current (average) IF(AV): 20 A type • High reliability caused by sealed in the TOP-3F (Full-pack package) • Cathode common dual type • Low forward rise voltage VF

MA3G762

Abstract: MA762
Contextual Info: Schottky Barrier Diodes SBD MA3G762 (MA762) Silicon epitaxial planar type (cathode common) Unit : mm 0.7 ± 0.1 For switching power supply 5.0 ± 0.2 3.2 ± 0.2 φ 3.2 ± 0.1 2.0 ± 0.1 3.5 ± 12.7 ± 0.3 0.3 Solder Dip 16.2 ± 0.5 ue pl d in an c se ed lud

MA3G751

Abstract: MA3G751A MA751 MA751A
Contextual Info: Schottky Barrier Diodes SBD MA3G751, MA3G751A (MA751,MA751A) Silicon epitaxial planar type (cathode common) Unit : mm • Forward current (average) IF(AV): 20 A type • High reliability caused by sealed in the TOP-3F (Full-pack package) • Cathode common dual type

Contextual Info: Schottky Barrier Diodes SBD MA3G751 (MA751), MA3G751A (MA751A) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Repetitive peak MA3G751

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3G655 (MA655) Silicon planar type (cathode common) Unit: mm For high-frequency rectification 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3G655 (MA655) Silicon planar type (cathode common) Unit: mm For high-frequency rectification 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 16.2±0.5 21.0±0.5 Symbol Repetitive peak reverse voltage

MA3G655

Contextual Info: Fast Recovery Diodes FRD MA3G655 Silicon planar type (cathode common) Unit : mm • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr • Absolute Maximum Ratings Ta = 25°C 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 ■ Features

MA3G655

Abstract: MA655
Contextual Info: Fast Recovery Diodes FRD MA3G655 (MA655) Silicon planar type (cathode common) Unit : mm For switching circuits 5.0±0.2 (0.7) 15.0±0.3 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating φ 3.2±0.1 15.0±0.2 21.0±0.5 16.2±0.5 • High reverse voltage VR

Contextual Info: Fast Recovery Diodes FRD MA3G695 (MA695) Silicon planar type (cathode common) Unit : mm φ 3.2 ± 0.1 2.0 ± 0.2 M Di ain sc te on na tin nc ue e/ d • Cathode common dual type • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr

Contextual Info: Schottky Barrier Diodes SBD MA3G762 (MA762) Silicon epitaxial planar type (cathode common) Unit : mm 5.0 ± 0.2 3.2 ± 0.2 φ 3.2 ± 0.1 2.0 ± 0.1 3.5 ± 12.7 ± 0.3 0.3 Solder Dip 16.2 ± 0.5 M Di ain sc te on na tin nc ue e/ d • Forward current (average) IF(AV): 20 A type

MA3G762

Contextual Info: Schottky Barrier Diodes SBD MA3G762 Silicon epitaxial planar type (cathode common) Unit : mm 16.2 ± 0.5 5.0 ± 0.2 3.2 ± 0.2 φ 3.2 ± 0.1 15.0 ± 0.2 • Forward current (average) IF(AV): 20 A type • Repetitive peak reverse voltage VRRM: 90 V type • High reliability caused by sealed in the TOP-3F (Full-pack

MA3G655

Abstract: MA655
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3G655 (MA655) Silicon planar type (cathode common) Unit: mm For high-frequency rectification 5.0±0.2 (0.7) 15.0±0.3 (3.2) M Di ain sc te on na tin nc ue e/ d 11.0±0.2

MA3G695

Abstract: MA695
Contextual Info: Fast Recovery Diodes FRD MA3G695 (MA695) Silicon planar type (cathode common) Unit : mm 15.0 ± 0.3 11.0 ± 0.2 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 • Cathode common dual type • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr

MA3G695

Abstract: MA695
Contextual Info: Fast Recovery Diodes FRD MA3G695 (MA695) Silicon planar type (cathode common) Unit : mm • Cathode common dual type • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 • Features

anode common fast recovery diode

Abstract: MA3G655 MA655
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3G655 (MA655) Silicon planar type (cathode common) Unit: mm For high-frequency rectification 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: Fast Recovery Diodes FRD MA3G655 (MA655) Silicon planar type (cathode common) Unit: mm For high-frequency rectification 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 300 V Non-repetitive peak reverse

MA751

Abstract: MA3G751 MA3G751A MA751A
Contextual Info: Schottky Barrier Diodes SBD MA3G751, MA3G751A (MA751, MA751A) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter Symbol Repetitive peak MA3G751 Rating VRRM

Contextual Info: Schottky Barrier Diodes SBD MA3G762 (MA762) Silicon epitaxial planar type (cathode common) Unit : mm 16.2 ± 0.5 5.0 ± 0.2 3.2 ± 0.2 φ 3.2 ± 0.1 15.0 ± 0.2 • Forward current (average) IF(AV): 20 A type • Repetitive peak reverse voltage VRRM: 90 V type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3G751 (MA751), MA3G751A (MA751A) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2

Contextual Info: Fast Recovery Diodes FRD MA3G695 (MA695) Silicon planar type (cathode common) Unit : mm 21.0 ± 0.5 15.0 ± 0.2 2.0 ± 0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Repetitive peak reverse voltage VRRM Non-repetitive peak reverse surge voltage

MA3G655

Contextual Info: Fast Recovery Diodes FRD MA3G655 Silicon planar type (cathode common) Unit : mm • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr • Absolute Maximum Ratings Ta = 25°C 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 ■ Features

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)