MA SOT23 Search Results

NTP2955G

Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
Contextual Info: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature

Contextual Info: TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current 50 µA, typical • Low Dropout Voltage • Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output

A9 SOT-23

Abstract: SOT-23 marking A9 CT713 sot-23 N9 B3 marking transistor sot-23 B9 SOT-23 MARKING CODE MARKING B9 sot-23 marking B5 sot23-5 marking N8 sot-23 transistor marking code a7 SOT-23
Contextual Info: TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current 50 µA, typical • Low Dropout Voltage • Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output

B9 SOT-23 MARKING CODE

Abstract: sot-23 MARK a7 LP2980 TC1014 TC1015 TC1107 TC1108 TC1173 TC1185 52s marking code transistor
Contextual Info: TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current 50 µA, typical • Low Dropout Voltage • Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output

LP2980

Abstract: TC1014 TC1015 TC1107 TC1108 TC1173 TC1185 A7 TRANSISTOR sot 23 marking 1F SOT-23 B9 SOT-23 MARKING CODE
Contextual Info: TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current 50 µA, Typ. • Low Dropout Voltage • Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output

TC1055-3.3VCT713

Abstract: Marking c9 SOT23-5 TC1054 TC1055 TC1173 TC1186 3,6V ldo Tc117 SOT23-5 marking c9 marking code C9* sot23-5
Contextual Info: TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features General Description • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output

Contextual Info: TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features General Description • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output

C4NN

Abstract: 36VCT mark vh 5PIN
Contextual Info: TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features General Description • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output

W18 sot23

Abstract: ic w83 SOT343R bfp280tw SOT-343 BFP181TW
Contextual Info: Tem ic Semiconductors :m> # T 050I3 T050 (4) SOT23 60 Part Number v CEO Icnrax Plot 8t Tgjnti i s V mA # mW °C # SOT143 # SOT323 SOT343 Electrical characteristics ff at Ic hre a tlc and Gp at Ic and f VCE mA V MHz | raA dB mA MHz F at f and Ic dB MHz mA

microID RFID

Abstract: TC1XX
Contextual Info: M TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features Package Type • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output • High Output Voltage Accuracy

K 3264 transistor technical data

Contextual Info: LD2982Axx LD2982Bxx Very low drop and low noise voltage regulator with inhibit function, low ESR capacitors compatible Features • Very low dropout voltage 120 mV at 50 mA and 7 mV at 1 mA load ■ Very low quiescent current (375 mA typ. at 50 mA load and 75 mA at 1 mA)

uc 2895

Abstract: UC 3528 et 1102 474 3.5v vo LD2982 LD2982BM18R LD2982BXX18
Contextual Info: LD2982BXX18 Very low drop and low noise voltage regulator with inhibit function, low ESR capacitors compatible Features • Very low dropout voltage 120 mV at 50 mA and 7 mV at 1 mA load ■ Very low quiescent current (375 mA typ. at 50 mA load and 75 mA at 1 mA)

TC1054

Abstract: TC1055 TC1173 TC1186 marking code C8 5pin
Contextual Info: M TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features Package Type • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA TC1054 , 100 mA (TC1055) and 150 mA (TC1186) Output • High Output Voltage Accuracy

0/cc 3053 diode PHILIPPINES

Abstract: LD2982 LD2982BM18R LD2982BXX18 K 3264 transistor K 3264 transistor technical data
Contextual Info: LD2982BXX18 Very low drop and low noise voltage regulator with inhibit function, low ESR capacitors compatible Features • Very low dropout voltage 120 mV at 50 mA and 7 mV at 1 mA load ■ Very low quiescent current (375 mA typ. at 50 mA load and 75 mA at 1 mA)

smd-transistor DATA BOOK

Abstract: triac ansteuerung smd-transistor SMD transistors Relais datenblatt RGS 13 simple circuit diagram of electronic choke SITAC P-Channel Depletion Mode Field Effect Transistor SMD transistor Mo Siemens varistor family
Contextual Info: Technische Angaben Technical Information SIPMOS Kleinsignal-Bauelemente SIPMOS Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.

siemens Transistoren

Abstract: induktive triac ansteuerung smd transistors SIPMOS application note BSS98 equivalent Siemens Halbleiter Bauelemente Siemens Halbleiter
Contextual Info: Technische Angaben Technical Information SIEMENS SIPMOS Kleinsignal-Bauelemente SIPMOS® Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.

zener y11

Abstract: zener 472
Contextual Info: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N

Contextual Info: LD2985Axx LD2985Bxx Very low drop and low noise voltage regulator low ESR capacitors compatible, with inhibit function Features • Very low dropout voltage 280 mV at 150 mA and 7 mV at 1 mA load ■ Very low quiescent current (2 mA typ. at 150 mA load and 80 mA at no load)

bat41 BAT46

Abstract: bat49 bat41 bat43 TMMBAT48 BAS70 MELF TMMBAT49 BAT41
Contextual Info: DIODES SIGNAL SCHOTTKY DIODES MINIMELF MELF SOT23 DO41 DO35 UHF AND ULTRA-FAST SWITCHING TA=25°C VRRM Device IF Config. IR* @ VR max (V) (mA) (mA) VF* @ IF max C @ VR F=1MHz Dynamic parameters max Package (V) (V) (V) (mA) (pF) 1N5711 1N6263 70 60 15 15

LD2985BM50

Contextual Info: LD2985Axx LD2985Bxx Very low drop and low noise voltage regulator low ESR capacitors compatible, with inhibit function Features • Very low dropout voltage 280 mV at 150 mA and 7 mV at 1 mA load ■ Very low quiescent current (2 mA typ. at 150 mA load and 80 mA at no load)

LD2985AM18R

Abstract: T 4512 H diode LD2985B 33
Contextual Info: LD2985Axx LD2985Bxx Very low drop and low noise voltage regulator low ESR capacitors compatible, with inhibit function Features • Very low dropout voltage 280 mV at 150 mA and 7 mV at 1 mA load ■ Very low quiescent current (2 mA typ. at 150 mA load and 80 mA at no load)

TC1055

Abstract: TC1173 TC1186 TC1054 CT713
Contextual Info: TC1054/TC1055/TC1186 具有关断和 ERROR 输出的 50 mA100 mA 和 150 mA CMOS LDO 特性 概述 • 低地电流而延长电池使用寿命 • 低压差 • 50 mA （TC1054）、100 mA （TC1055）和 150 mA （TC1186）输出可供选择 • 高输出电压精度

b1 5-sot 23

Abstract: LP2980 TC1014 TC1015 TC1016 TC1107 TC1108 TC1185 DS21335
Contextual Info: TC1014/TC1015/TC1185 具有关断和参考旁路功能的 50 mA 100 mA 和 150 mA CMOS LDO 特性： 概述 • 极低的供电电流 （典型值 50 µA） • 低压差 • 有 50 mA （TC1014）、 100 mA （TC1015）和 150 mA （TC1016）输出可供选择

2SC4370A

Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
Contextual Info: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)