MA MARKING SOT23 Search Results

M ktc2875

Abstract: KTC2875 marking ma MARKING M.A
Contextual Info: SEMICONDUCTOR KTC2875 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking MA No. 1 Item Marking Device Mark M KTC2875 hFE Grade A A,B * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

SST502

Abstract: SST5114 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510
Contextual Info: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7

SST502

Abstract: SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511
Contextual Info: SST502 Series Vishay Siliconix Current Regulator Diodes—POV min 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) PRODUCT SUMMARY Anode Part Number Typ IF (mA) Marking M ki Part Number Typ IF (mA) Marking M ki SST502

marking L2

Contextual Info: SST502 Series Vishay Siliconix Current Regulator Diodes— P o v m in 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) > PRODUCT SUMMARY Part Number Typ lF (mA) Part Number tvp if Marking (mA) Marking S ST502 0.43

marking HB diode

Abstract: marking code HB BAS21 BAS20 BAS20 HB marking codes sot-23 marking code transistor marking code SOT-23 BAS19 marking code TS
Contextual Info: BAS19, BAS20, BAS21 HIGH VOLTAGE SWITCHING DIODES 3 BAS19 BAS20 BAS21 Marking Code: HA Marking Code: HB Marking Code: HC 1 2 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VR 120 200 250 V IF 200 mA IFM(surge) 625

marking code HB

Abstract: BAS21 BAS20 bas19 HA MARKING
Contextual Info: BAS19, BAS20, BAS21 HIGH VOLTAGE SWITCHING DIODES 3 BAS19 BAS20 BAS21 Marking Code: HA Marking Code: HB Marking Code: HC 1 2 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VR 120 200 250 V IF 200 mA IFM(surge) 625

zener y11

Abstract: zener 472
Contextual Info: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE LMBT3904TT1 ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. ORDERING INFORMATION 3 Device Marking Shipping LMBT3904TT1 MA 3000/Tape&Reel LMBT3904TT3 MA 10000/Tape&Reel 1 2

Contextual Info: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5

BCW66

Abstract: BFS17P E6327 marking code MCs
Contextual Info: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BFS17P

Contextual Info: BFS17P NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BFS17P

Contextual Info: BFS17P NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B

Marking 18A

Abstract: MARKING 8S SOT-23
Contextual Info: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C

2222 NPN

Abstract: br 2222 npn npn 2222 2222a 2222 2907 pnp 2222 A DSA0032624 equivalent of 2222 NPN Q68000-A6473
Contextual Info: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)

marking z17

Abstract: z1 BZX84C4V7 BZX84C3V9 marking Z1 sot Z5.6 BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 MMBZ5223B
Contextual Info: SURFACE MOUNT ZENER DIODES BZX84C-SERIES 350mW CrossPart No. Marking Zener Max.Dyn. Test Max.Dyn. Test Temp. Rev. Code Voltage Imped. Current Imped. Current Coeff. Current @ Izt @ Izt @ Izt @Vr Vz V Zzt(Ω) Reference @ Izk Izt(mA) Zzk(Ω) Izk(mA) avz(%/k)

2222a

Abstract: npn 2222 2222 NPN br 2222 npn 2222 A 2222
Contextual Info: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration

marking 93A

Abstract: BFR93A transistor marking R2s
Contextual Info: BFR 93A NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration

Contextual Info: BFR 35AP NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 0.5 mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 35AP

marking code s2a SOT23

Abstract: smbt3906 MMBT3906 infineon
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

marking code s5 SOT23-6

Abstract: BAS70WT marking S5 sot363 KL8 SOT-23
Contextual Info: TM Micro Commercial Components SMALL SIGNAL SCHOTTKY DIODES MCC Part Number Peak Reverse Voltage Maximum Reverse Current PRV VR IR V V mA Maximum Forward Voltage Drop VF @ IF mV VF @ IF mA Surge Current Capacitance IFSM CTOT Marking Code Package Pin Identity

BFR93a

Contextual Info: BFR93A NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B

R2S sot23

Contextual Info: BFR93A NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93A R2s Pin Configuration 1=B