M62486A Search Results

Contextual Info: M62486A VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA 32K x 9 CMOS SYNCHRONOUS BURST SRAM FAST CYCLE TIMES: 15, 20ns FAST ACCESS TIMES: 11, 12, 14ns Max ON-BOARD BURST COUNTER INPUT REGISTERS ADDR.,DATA,CTRL SELF-TIMED WRITE CYCLE THREE STATE COMMON I/O

RK486

Contextual Info: SGS-THOMSON M62486A •m VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA 32Kx 9 CMOS SYNCHRONOUS BURST SRAM FAST CYCLE TIMES: 15, 20ns FAST ACCESS TIMES: 11,12, 14ns Max ON-BOARD BURST COUNTER INPUT REGISTERS ADDR.,DATA,CTRL SELF-TIMED WRITE CYCLE THREE STATE COMMON I/O

Contextual Info: 5 7 . S G S -T H O M S O N ílD aM Í[LiO T KQ [](gl M62486A VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA 32Kx 9 CMOS SYNCHRONOUS BURST SRAM FAST CYCLE TIMES: 15, 20ns FAST ACCESS TIMES: 1 1,12,14ns Max ON-BOARD BURST COUNTER INPUT REGISTERS (ADDR.DATA,CTRL

Contextual Info: SGS-THOMSON M62486A IQ J VER Y FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA • 32Kx 9 CMOS SYNCHRONOUS BURST SRAM ■ FAST CYCLE TIMES: 15, 20ns - FAST ACCESS TIMES: 11, 12, 14ns Max ■ ON-BOARD BURST COUNTER ■ INPUT REGISTERS ADDR.,DATA,CTRL ■ SELF-TIMED WRITE CYCLE

AN619

Abstract: 133M SIGNAL PATH designer
Contextual Info: AN619 APPLICATION NOTE FAST BURST SRAM DESIGN CONSIDERATIONS by Rickie TUTTLE INTRODUCTION This application note will discuss the definition of the fast Burst RAM BRAM for high performance systems, and consider application issues to ensure proper design techniques. Design issues become more

"Lookaside Cache"

Contextual Info: / T T SCS-THOMSON TA125 TECHNICAL ARTICLE Synchronous Burst SRAM for secondary CACHE systems Ricky Tuttle SGS-THOMSON Microelectronics Carrollton, USA The advent of high speed microprocessors and the requirement for high performance systems has opened the door to the Fast SRAM FSRAM mar­

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .

AN619

Abstract: 3.2 zener diode OF SGS-THOMSON SIGNAL PATH designer
Contextual Info: AN619 APPLICATION NOTE FAST BURST SRAM DESIGN CONSIDERATIONS by Rickie TUTTLE INTRODUCTION This application note will discuss the definition of the fast Burst RAM BRAM for high performance systems, and consider application issues to ensure proper design techniques. Design issues become more

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W