M5M4464 Search Results

M5M4464

Abstract: 65536X4 4464AP
Contextual Info: MITSUBISHI LSIs M5M4464AP, J, L-8, -10, -12, -15 2 6 2 1 4 4 -B IT 6 5 5 3 6 -W O R D BY 4 -B IT DYNAMIC RAM D A T A IN / D A TA OUT OE O' o use o f dynamic c irc u itry including sense amplifiers assures low power dissipation. M ultiplexed address inputs perm it

Contextual Info: MITSUBISHI LSIs M5M4464AP, i, L-8, -10, -12, -15 2 6 2 1 4 4 -B IT 6 5 5 3 6 -W O R D B Y 4 -B IT DYNAMIC RAM DESCRIPTION T h is is fam ily of 65536-word by 4-bit dynam ic RA M s, fabricated w ith the high performance N-channel silicon-gate M OS process, and is ideal fo r large-capacity memory

M5M4464

Abstract: L-12 M5M4464AP DYNAMIC RAM 65536
Contextual Info: MITSUBISHI LSIs M5M4464AP, I, L-8, -10, -12, -15 2 6 2 1 4 4 - B I T 6 5 5 3 6 - W O R D B Y 4 - B IT D Y N A M IC R A M PIN CONFIGURATION (TOP VIEW) O U T P U T E N A B LE IN P U T o -o O o D A T A IN / D ATA OUT OE 3 (O V ) Vss D A T A IN /D A T A OUT

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

LH2464-10

Abstract: HY53C464-10 LH2464-12 M5M4464P-12 41464 21464-12 HY53C464-12 HY53C464-70 lh2464 50464cp
Contextual Info: 193 - 2 5 6 K SL £ tt « fa« ® oc> X A nMOS Dynamic • ■ / + > ? Wr TRAC ■ax ns TRCY ■in (ns) TCAD min (ns) TAH min (ns) TP nin (ns) RAM (6 5 5 3 6 X 4 ) ft WCY ■in (ns) * TDH nin (ns) TRWC lin (ns) V D D or V C C (V) IDD max (■A) 18PIN K