M52D64322A Search Results

Contextual Info: ESMT M52D64322A Revision History Revision 1.0 Jan. 19, 2007 -Original Revision 1.1 (Mar. 03, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Revision 1.3 (Mar. 11, 2008) - Modify ICC spec - Modify tRC(min), tRFC(min), tSAC(max), tSS(min), tSH(min), and tSHZ(max)

Contextual Info: ESMT M52D64322A Revision History Revision 1.0 Jan. 19, 2007 -Original Revision 1.1 (Mar. 03, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007

Contextual Info: ESMT M52D64322A Mobile SDRAM 512K x 32 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION FEATURES y y y y y y y y y y 1.8V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3

Contextual Info: ESMT M52D64322A 2E (Preliminary) Mobile SDRAM 512K x 32 Bit x 4 Banks Mobile Synchronous DRAM FEATURES y y y y y y y y y y 1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3)

Contextual Info: ESMT M52D64322A Revision History Revision 1.0 Jan. 19, 2007 -Original Revision 1.1 (Mar. 03, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Revision 1.3 (Mar. 11, 2008) - Modify ICC spec - Modify tRC(min), tRFC(min), tSAC(max), tSS(min), tSH(min), and tSHZ(max)

M13S2561616A-5TG

Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Contextual Info: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now