M48FS12 Search Results

Contextual Info: E/M48F512 0 0 0 Q 512K CMOS FLASH EEPROM PR ELIM IN A R Y D A TA S H EET O ctober 1989 Block Diagram Features • 6 4 K B yte Flash E rasable N on-Volatile M em ory ■ F LA SH E E P R O M C ell Technology ■ E lectrical C hip a n d 512 B yte Sector Erase

Contextual Info: S@@Q E/M48F512 512K CMOS FLASH EEPROM PRELIMINARY DATA SHEET October 1989 Block Diagram Features • ■ ■ ■ ■ ■ ■ 64K Byte Flash Erasable Non-Volatile Memory FLASH EEPROM Cell Technology Electrical Chip and 512 Byte Sector Erase Input Latches for Writing and Erasing