E48F512 Search Results

SEEQ eeprom

Contextual Info: SEES TECHNOLOGY INC 11E D 011=1233 GQ0S7S4 3 E/M48F512 512K CMOS FLASH EEPROM • 'T W & - r 2 » - z - 7 October 1989 PRELIMINARY DATA SHEET Block Diagram Features ■ n ■ ■ ■ m ■ 64K Byte Flash Erasable Non-Volatile Memory FLASH EEPROM Cell Technology

47F512-200

Abstract: 47F512-250 47F512-300 48F512-200 48F512-250 48F512-300 E47F512-250 E47F512-300 E48F512-200 E48F512-250
Contextual Info: — 130 — 2 8 F 5 12 X 4 •■/ * > %. i&SEIE a 45 CC TAAC max <ns) TCAC max ns) TOH max (ns) TOE (ns) TOD max (ns) VDD (V) m ft i\/n A 1 DD/STANDBY (mA) VII max (V) VIH min (V) Ci max (pF) V O L / 1 VOL max (V/raA) % € «5 VOH/IVOH min (V/jiA) Co

Contextual Info: E/M48F512 0 0 0 Q 512K CMOS FLASH EEPROM PR ELIM IN A R Y D A TA S H EET O ctober 1989 Block Diagram Features • 6 4 K B yte Flash E rasable N on-Volatile M em ory ■ F LA SH E E P R O M C ell Technology ■ E lectrical C hip a n d 512 B yte Sector Erase

Contextual Info: S@@Q E/M48F512 512K CMOS FLASH EEPROM PRELIMINARY DATA SHEET October 1989 Block Diagram Features • ■ ■ ■ ■ ■ ■ 64K Byte Flash Erasable Non-Volatile Memory FLASH EEPROM Cell Technology Electrical Chip and 512 Byte Sector Erase Input Latches for Writing and Erasing