M33 NEC Search Results

transistor m33

Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package

M33 TRANSISTOR

Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package

NESG2107M33

Abstract: NESG2107M33-A NESG2107M33-T3-A
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION

UKA720

Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
Contextual Info: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller

NE687M33

Abstract: NE687M33-A NE687M33-T3-A MARKING CODE m33
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33-A 50 pcs (Non reel)

NE685M33-T3-A

Abstract: NE685M33 NE685M33-A
Contextual Info: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION

M33 nec

Abstract: M33 TRANSISTOR NESG2046M33 marking T7
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

date code marking NEC

Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

NESG2046M33

Abstract: NESG2046M33-A NESG2046M33-T3-A
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY

Contextual Info: Rev 1; 010809 DS33M30/DS33M31/DS33M33 Ethernet Over SONET/SDH Mapper _ General Description _Features Support for EoS in One STS-3c/VC-4, EoS Over Up to Three Concatenated STS-1/VC-3s, and EoPoS Over Up to Three Concatenated

tr/P45/marking code M31

Contextual Info: Rev 1; 010809 DS33M30/DS33M31/DS33M33 Ethernet Over SONET/SDH Mapper _ General Description _Features ♦ Support for EoS in One STS-3c/VC-4, EoS Over Up to Three Concatenated STS-1/VC-3s, and EoPoS Over Up to Three Concatenated

SDH ADM

Abstract: MultiService Access Platform Frame structure for Multiplexing of four E2 streams into E3 stream barker code motorola STM-1 Physical interface PHY STS-3c-SPE DS33 k4h561638f trace code micron label
Contextual Info: ABRIDGED DATA SHEET Rev: 101508 DS33M30/DS33M31/DS33M33 Ethernet Over SONET/SDH Mapper _ General Description _Features ♦ Support for EoS in One STS-3c/VC-4, EoS Over Up to Three Concatenated STS-1/VC-3s,

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

uj01

Abstract: M33 TRANSISTOR
Contextual Info: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE

M33 63

Abstract: PTR 80 AP-930 245045 3x3 matrix c1b24 m6636 matrix multiplication M-128 EDX20
Contextual Info: AP-930 Streaming SIMD Extensions Matrix Multiplication June 1999 Order Number: 245045-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel

GN1A4M

Contextual Info: zr— S • — h* NEC C o m p o u n d T r a n s is to r GN1A4M P N n P x t: U □ > \ - = 7 > m i> 7 .9 ¥ - fi • mm 2.1 ± 0.1 ( R j = k i2 , 10 O— v R 2 = 10 k Q ) W — 11 1.25 ± 0 .1 w R, — V R. O G A 1A 4 M t => > 7 ' u / OE > ? 'J i 1 % ( T a = 25 °C )

ULA 2115

Contextual Info: Am79C02/03/031 A Advanced Micro Devices Dual Subscriber Line Audio Processing Circuit (DSLAC ) Devices DISTINCTIVE CHARACTERISTICS • Softw are program mable: -S L IC impedance -T ranshybrid balance -T ra nsm it and receive gains -E qualization -D ig ita l I/O pins

Contextual Info: Am79C02/03/031 A Advanced Micro Devices Dual Subscriber Line Audio Processing Circuit (DSLAC ) Devices D ISTIN CTIVE C H A R A C T E R IS T IC S • Softw are programmable: ■ Dual PCM ports -U p to 8.192 M Hz each (128 channels per port) - S L I C impedance

marking 702 sot23

Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
Contextual Info: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,

m33 tf 130

Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Contextual Info: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP

m33 tf 130

Abstract: 1001 fba hybrid
Contextual Info: Am79C02/03/031 A A M D ÎI Dual Subscriber Line Audio ProcessingCircuit (DSLAC ) Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s .2-7

Contextual Info: Am79C02/03/031 A Dual Subscriber Line Audio ProcessingCircuit (DSLAC ) Devices TABLE OF CONTENTS Distinctive C h a ra cte ristics . 7

R1Z regulator

Abstract: sfh 123-2
Contextual Info: Am79C02/03/031 A Dual Subscriber Line Audio ProcessingCircuit (DSLAC ) Devices TABLE OF CONTENTS Distinctive C h a ra cte ristics . 7