M3025 Search Results

CD4019B

Abstract: B4KB a4ka kb-04 15-V
Contextual Info: HARRIS SEMICOND SECTOR MME M302571 D HARRIS 0037331 A • HAS - n . / ^ / 3 - 2 C D 4019B Types Features: CMOS Quad AND/OR Select Gate ■ Medium-speed o p e ra tio n . • * * *P H L = *P LH = 60 ns ty p . a t C l = 50 p F , V q q - 1 0 V ■ Standardized, sym m etrical o u tp u t characteristics

74hc4075

Contextual Info: T -4.vai-O D Technical Data — CD54/74HC4075 CD54/74HCT4075 File Number 1 7 7 8 HARRIS SEMICOND SECTOR 27E D M302571 0017^55 A BiHAS High-Speed CMOS Logic Triple 3-Input OR Gate Type Features: • Buffered inputs ■ Typical CD54/74HC4075 Propagation Delay = 8ns

Contextual Info: 4bE D HARRIS SEMICOND SECTOR • M302571 □□3^132 fl ■ HAS MWS5114 HARRIS S E M I C O N D U C T O R - 4 < a ~ Z '5 - 0 2 1024-Word x 4-Bit LSI Static RAM February 1992 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4 bit static random access

LA 7652

Contextual Info: M302571 DQMMMST TMb I I HAS HARRIS S E M I C O N D U C T O R CD4000BMS, CD4001BMS CD4002BMS, CD4025BMS HARRIS SEMICOND SECTOR SñE J> CMOS NOR Gate December 1992 T 'H Pinouts Features CD4000BMS • High-Voltage Types 20V Rating • Propagation Delay Tim e

74HCT541

Contextual Info: _ File Number CD54/74HC540, CD54/74HCT540 CD54/74HC541, CD54/74HCT541 1659 57E D HARRIS SEMICOND SECTOR • M302571 GQ17Ô3L □ S3 HAS "P52r0l High-Speed CMOS Logic AO— - "-Y O A 1 -1 ^ -Y 1 IS —Y2 < - 4 TCO a* ¿Ü _Y3 A4- A Já-Y4

TMS 2370

Abstract: HA2-2605-5 HA-2605 HA2602 A 2602 16 pin
Contextual Info: blE ]> HARRIS SEMICOND SECTOR æ • M302571 004b537 040 H H A S HA-2600, HA-2602 HA-2605 HARRIS SEMICONDUCTOR Wideband, High Impedance Operational Amplifiers March 1993 Features • • • • • • • • • Description 12MHz Wide Bandwidth.

CD40162

Abstract: CD40163B 74ls163 function table 74ls163 truth table 15-V 74LS160 CD40160B CD40161B CD40162B preset counting meter diagram
Contextual Info: HARRIS S E MI C O ND SECTOR 44E ]> 43GE271 0037734 ~ CD 40160B — Decade with Asynchronous Clear CD 40161B — Binary with Asynchronous Clear CD 40162B — Decade with Synchronous Clear CD 40163B — Binary with Synchronous Clear • CD40160B, CD40161B, CD40162B,

p1806

Abstract: CDP1804 str 6565 CDP1804ACD CDP1804A RTA 16065 CDP1804ACE 1802 harris
Contextual Info: HARRIS SEfllCOND SECTOR 37E D I 43G2271 Q023Gbb 7 IHAS 1800-Series Microprocessors and Microcomputers . CDP1804AC - iq - o S CMOS 8-Bit Microcomputer With On-Chip RAM, ROM, and Counter/Timer T E R M IN A L A S S IG N M E N T CLOCK — #A lT 2 CLEAR — 3 0 — 4

80c85

Abstract: Intel 8155 Port IC intel 8155 5962R9XXXX01QXC
Contextual Info: i l i h a r r is HS-81C55RH 81 S E M I C O N D U C T O R Radiation Hardened 256 X 8 CMOS RAM March 1996 Features Description • Devices QM L Qualified in Accordance with MIL-PRF-38535 The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Harris radiation hardened SelfAligned Junction Isolated SAJI silicon gate technology.

Contextual Info: H A R R IS æ S E M IC O N D SECTO R bSE D • lHARRlS S E M I C O N D U C T O R 4305571 G D M ^O M l 7 3 e! « H A S 2N7277D, 2N7277R 2N7277H REGISTRATION PENDING Currently Available as FRM234 D, R, H . . Radiation Hardened N-Channel Power MOSFETs ju n « 1993

Contextual Info: f f ì HI5703 H L A F R R IS S E M I C O N D U C T O R 10-Bit, 40 MSPS A/D Converter August 1996 Features Description • 40 MSPS Sampling Rate The HI5703 is a monolithic, 10-bit, analog-to-digital converter fabricated in Harris’s BiCMOS process. It is designed for high

Contextual Info: 3875081 G E SO LID STATE 01E O p to electro n ic S p e c ific a tio n s _ 19798 - m HARRIS SEM IC O ND SECTOR 37E D *4302271 0Q272b0 1 - 7 I HAS 1mm Aperture Photon Coupled Interrupter Module H22L1,H22L2| SY M B O lj— M IN . T h e G E Solid S ta te H 2 2 L series is a gallium arsenide, infrared

Contextual Info: S HS-26C32RH HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Receiver August 1995 Features • Pinouts 1. 2 Micron Radiation Hardened CMOS HS1-26C32RH 16 LEAD CERAM IC SIDEBRAZE DIP M IL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si

Contextual Info: HARRIS SEMICÓND SECTOR 3?E 5 ES 43Q2271 OGSblö? 1 M HAS Hlgh-Reliabillty Advanced CMOS Logic ICs_ — - -— —- Recent Additions CD54AC646/3A CD54ACT646/3A T ’ -52.-3>l Octal-Bus Transceiver/Register, 3-State

CA3300

Abstract: CA3306 CA3306AE
Contextual Info: 43D 2271 G D S lb ä b TbE • H A S C A 3306 GBH " » CMOS Video Speed 6-Bit Flash A/D Converter December 1993 Features Description • CMOS Low Power with Video Speed 70mW Typ. The CA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications demanding both low power

ha574

Abstract: TE 538
Contextual Info: HARRIS SENICOND SECTOR 77 1 43 0 2 2 7 1 ¡ 2 dF | 4302571 □□0ci012 5 | ~ 77C 09012 HARRIS SEMICOND SECTOR H a r r i s H Y - 9 D' 5 T-51-10-12 7 4 in o> ADVANCED Sampling 12 Bit A /D Converter with > 8/16 Bit fjP interface Applications Features • Complete 12 Bit Sampling

Contextual Info: HARRIS SEMICOND SECTOR TS H A R F "S ADVANCE INFORMATION dË| 4302271 ‘i | j-46-23- 08 H S -65142R H Radiation Hardened 1024 x 4 CM OS RAM Features • Radiation H ardened E P I-C M O S • Asynchronous Operation • Total D ose.> 5 x 105 Rad Si

Contextual Info: f f l H A R R HCS283MS I S S E M I C O N D U C T O R Radiation Hardened 4-Bit Full Adder with Fast Carry O c to b e r 19 9 5 Pinouts Features • 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C 3 Micron Radiation Hardened SOS CMOS

Contextual Info: f f i H A R R HC5517 IS S E M I C O N D U C T O R Ringing SLIC Subscriber Line Interface Circuit August 1996 Features Description Thru-SLIC Ringing up to 44Vrm§ into 3 REN at 10% THD with a -80V Battery • Sinusoidal Ringing Capability The HC5517 is a ringing SLIC designed to accommodate a

Contextual Info: H A RR IS S E M I C O N » S E C T O R m H A R R I 4bE T> 4 3 0 2 2 7 1 □□3'ìGbS ñ M H A S m HM-6518 S S E M I C O N D U C T O R - r - 4 ~ r ô - o s 1 0 2 4 x 1 CM OS RAM February 1992 Description Features • i û The HM-6518 is a 1024 x 1 static CMOS RAM fabricated

kjm 038

Contextual Info: HARRIS H A SEflICOND R R SECTOR bflE D Bi 4302571 OOSa?^^ I S 5ST • H F H F HAS A 1 1 1 1 2 S E M I C O N D U C T O R A Ultra High-Speed Current Feedback Amplifier March 1993 Features Description • Low D isto rtio n 30M Hz .-66dBc

Contextual Info: HARRIS SLflICOND SECTOR 37E D m 4302271 □D213bT M B I H A S 3875081 G E SOLID STATE 01E 13555 _ D ~ T - 5 /-// CD4016A Types CMOS Quad Bilateral Switch • High degree of linearity: <0.5% distortion typ. @ fj$ = 1 k H z ,V is * 5 V p .p.

CD4011B

Abstract: CD40238 cd40128 z4763 CD4023B CD4011BH 15-V CD40 CD4012B CD401
Contextual Info: HARRIS SEMICOND SECTOR MME M30527Í D DQ373MS 4 «HAS T - 4 3 'Z .I CD4011B, CD4012B, CD4023B Types HARRIS CMOS NAND GATES Features: High-Voltage Types 2 0 -V o lt Rating Quad 2 Inp ut - CD4011B Dual 4 In p u t-C D 4 0 1 2 B Triple 3 Inp ut — CD4023B • C D 4 0 1 1 B , C D 4 0 1 2 B , and C D 4 0 2 3 B

HMF-03300

Abstract: HMF0330 GAAS FET CROSS REFERENCE
Contextual Info: HARRIS MU S E M I C O N D U C T O R HARRIS PRODUCT DATA MbE D • 430221^ GGG0157 3 ■ HMS HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates